We recently observed that the decanoylation of N-phenylthiocarbamoyl chitosan (2) with a mixture of decanoic anhydride and pyridine at 60 °C for 24 h afforded N,N-(decanoyl)phenythiocarbamoyl-/2-isothiocynato chitosan decanoate (3b) rather than the expected product N,N-(decanoyl)phenylthiocarbamoyl chitosan decanoate (3a). This result suggested that some of the N,N-(decanoyl)phenylthiocarmbamoyl groups had been converted to isothiocyanate groups during the decanoylation process. The subsequent reaction of compound 3b with aniline gave N,N-(decanoyl)phenylthiocarbamoyl/N-phenylthiocarbamoyl chitosan decanoate (4) in high yield. A solution of compound 4 in CHCl3 was then added to a solution of copper decanoate (5) in the same solvent, and the resulting mixture was cast onto a glass plate to give a cast film. The film was annealed at 200 °C in an oven to give a greenish film, which showed good near-infrared absorption characteristic in the range of 800–2200 nm. 相似文献
By using structural equations, we investigated the effect of chronic stress on salivary cortisol rhythm and proposed a causal model of chronic stress by using psychosocial and physiological data. First, 111 healthy workers (48 males, 63 females) completed questionnaires on chronic stress and lifestyle habits. Then, they provided saliva samples and answered questionnaires that were prepared to assess their psychological states 5 times (on waking up and at 10:00, 11:40, 14:00, and 16:00) on workdays. Structural equation modeling (SEM) revealed that chronic stress and longer commuting time resulted in sleep irregularities and this disrupted the cortisol circadian rhythm. This suggests that chronic stress disrupts the cortisol circadian rhythm even in healthy individuals, and sleep regularity mediates the effect of chronic stress on the cortisol rhythm.
Summary The effect of side chain length on intramolecular triplet energy migration of naphthalene containing polymers was investigated by a delayed fluorescence (DF) spectroscopy for the solid solution of the polymers. The degree of triplet energy migration depends strongly on whether the chromophores are directly attached to the main chain or not. 相似文献
The durability of a cold wall MHD generator consisting of metal electrodes and alumina-coated peg insulators was experimentally examined in the oil-fired MHD condition with the additive of SO2 corresponding to S = 0.54 wt%. The structure of the electrode wall and various anode and cathode materials were tested, with particular reference to developing long-life electrodes. It was clarified that Pt, SHOMAC (28.8 Cr−1.9 Mo) and SUS-304 as anodes and W---Cu (70 W−30 Cu) and WC---Ag (60 WC−40 Ag) alloys as cathodes were promising for durability and that the structure of an anode divided into two elements connected to each other with an SnO2 resistor was very useful for uniformity of the anode corrosion pattern and the inter-anode voltages. It is reasonable to expect, from the test results, that the lifetime of a cold wall MHD generator in an oil-fired commercial plant will be over 4000 h, and therefore, a foundation for its commercial use has been established. 相似文献
Ti1−xVxO2 solid solution film photoelectrodes were prepared by the dip-coating sol–gel method. X-ray diffraction and X-ray photoelectron spectroscopy were employed to ensure the formation of the solid solution and their composition. Obvious photoresponses were observed in the visible region for the solid solution film electrodes with x0.05 and the red shift of the photoresponse was enhanced with increasing x. Moreover, the solid solution film electrodes were found to be photoelectrochemically stable. However, the onset potential of photocurrent shifted positively with increasing x. Band model of the solid solution was suggested to explain the effects of the vanadium incorporation on the photoelectrochemical properties. 相似文献
A 7-Mb BiCMOS ECL (emitter coupled logic) SRAM was fabricated in a 0.8 μm BiCMOS process. An improved buffer with a high-level output of nearly VCC is adopted to eliminate the DC current in the level converter circuit, and the PMOS transistor has a wide operating margin in the level converter. The configurable bit organization is realized by using a sense-amplifier switch circuit with no access degradation. A wired-OR demultiplexer for the ×1 output, having the same critical path as the ×4 output circuit, allows for the same access time between the two modes. The ×1 or ×4 mode is electrically selected by the external signal. A simplified programming redundancy technology, shift redundancy, is utilized. Address programming is performed by cutting only one fuse in the shift redundancy. The RAM operates at the ECL-10K level with an access time of 7 ns. and the power dissipation at 50 MHz is 600 mW for the × mode 相似文献