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1.
The present paper includes experimental and analytical data on the fracture properties of a nickel-iron superalloy, a ferromagnetic austenite, at 4 K in magnetic fields of 0 and 6 T. The tensile, notch tensile and small punch tests are employed. A finite element analysis is also performed to convert the experimentally measured load-displacement data into useful engineering information. To interpret the results we review the available theory of the influence of magnetic field on the stress intensity factor for a crack in ferromagnetic materials.  相似文献   
2.
This paper describes the dielectric breakdown characteristics of oil and oil‐impregnated paper for very fast transient (VFT) voltages. Blumlein circuits generate VFT voltages of 60 and 300 ns in a pulse width that simulates disconnecting switching surges in gas‐insulated switch gears. We measured the breakdown voltages of needle‐to‐plane, plane‐to‐plane oil gaps and several pieces of paper between plane electrodes for VFT and lightning impulse voltages. The measured data were formulated in V‐t characteristics and Weibull probability distributions. The inclination n of V‐t characteristics of insulating paper is 150, which is less than n = 13.7 of the plane‐to‐plane oil gap in the VFT time range. The shape parameters of Weibull distribution obtained in this study show that the scattering of breakdown voltages of paper is much less than that of oil. © 2002 Wiley Periodicals, Inc. Electr Eng Jpn, 141(4): 16–24, 2002; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.10043  相似文献   
3.
Anumberoflanthanideternarycomplexescon tainingheterocyclicamineshavebeenreportedsince1960 [1] .Inrecentyearsmuchattentionhasbeenpaidtoquaternarycomplexesoflanthanidesbecauseofin terestingstructure ,coordinationmode ,competitionre actionandproperty[2~ 9] .ESRcane…  相似文献   
4.
5.
According to the recent analysis results of temporary ac overvoltage in the ac system connected with a frequency converter station, large-magnitude over-voltages were confirmed to occur under some special system conditions. Most of the station insulators currently used cannot withstand such overvoltages according to an evaluation based on the data obtained earlier. The necessity of tests to be done to evaluate such performance more accurately was recognized. Both power frequency and switching impulse overvoltage flashover tests were made on contaminated insulators by the method well simulating the natural wetting condition. Switching impulse flashover voltage with the waveshape having a long wavefront time of 2 ms can be well correlated with the flashover voltage characteristics of temporary ac overvoltage. Higher flashover voltage characteristics were obtained by a clean fog test method compared with those obtained by equivalent fog test method.  相似文献   
6.
Thin film formation of graphite by chemical vapor deposition using 2-methyl-1,2′-naphthyl ketone as a starting material was carried out on Ni film substrates. On Ni films directly deposited on quartz glass, the graphite films were obtained when the Ni film thickness was above 1 000 Å and above 5 000 Å at 700 °C and 1 000 °C, respectively. Depositions on thinner Ni film substrates comprise amorphous carbon (a-C) or graphite tubes which was owing to the thermal coagulation of the Ni film into droplets. On the other hand, graphite film was obtained on the Ni film with thickness 10 Å when a-C was inserted between the Ni film and the quartz glass. The coagulation of the Ni film is considered to be avoided by inserting a-C layer.  相似文献   
7.
In this paper, we study the dynamic survivable routing problem, both in optical networks without wavelength conversion and in optical networks with sparse wavelength conversion, and propose a novel hybrid algorithm for it based on the combination of mobile agents technique and genetic algorithms (GA). By keeping a suitable number of mobile agents in the network to cooperatively explore the network states and continuously report cycles (that are formed by two disjoint-link routes) into the routing tables, our new hybrid algorithm can promptly determine the first population of cycles for a new request based on the routing table of its source node, without the time consuming process associated with current GA-based lightpath protection schemes. We further improve the performance of our algorithm by introducing a more advanced fitness function that is suitable for both the above networks. Extensive simulation studies on the ns-2 network simulator show that our hybrid algorithm achieves a significantly lower blocking probability than the conventional survivable routing algorithms for all the cases we studied.  相似文献   
8.
We investigated Au catalysts supported on TiO2, Fe2O3, and ZnO for their preferential oxidation of CO in a H2-rich atmosphere. Both full conversion and selectivity were achieved over Au/Fe2O3 and Au/ZnO around room temperature, but at higher temperatures the CO conversion was suppressed due to competition between CO and H2.  相似文献   
9.
The three-dimensional dynamics of two interacting quantized vortex filaments is studied. The equations of motion and the method of numerical calculation follow Schwarz. Whether two approaching filaments reconnect or not depends on their arrangement before approach. When a ring moves toward a line from a distance, only within a critical initial distance they can reconnect. The critical distance is minimized when their circulations are parallel at the closest place, while it increases as their circulations begin to deviate from being parallel. Hence the reconnection probability can be less than unity.  相似文献   
10.
Silicon nitride film deposited by LPCVD with newly developed in situ HF vapor cleaning has been studied and applied to fabricate dielectric films for stacked DRAM capacitors. Using this method, an oxide-free surface of underlaid poly-Si can be obtained. Silicon nitride film deposited on this surface has been verified by FTIR measurement to have the stoichiometrically proper composition of Si3N4 . However, the film was found to be selectively deposited on poly-Si electrodes. This selective deposition degrades the reliability of the stacked capacitor, because the silicon nitride can not completely cover the periphery of poly-Si electrodes on SiO2. We propose a simple process that avoids the problem making it possible to apply silicon nitride film to stacked-capacitor fabrication. Stacked capacitors fabricated by this process exhibit very low leakage current and high electrical reliability even for ultra-thin silicon nitride films less than 5 nm thick  相似文献   
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