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1.
用剩余强度法测定了Fe~(55)及Co~(60)在铁-钴(50%)合金中850--980℃α-区域内的自扩散系数,结果分别为 D_(Fe)=0.26 exp(—55,600/RT)厘米~2/秒, D_(Co)=14 exp(—65,000/RT)厘米~2/秒。 激活能测定数值与用准化学理论分析结果符合较好。  相似文献   
2.
Algorithmic analysis of nonlinear hybrid systems   总被引:2,自引:0,他引:2  
We present two methods for translating nonlinear hybrid systems into linear hybrid automata. Properties of the nonlinear systems can then be inferred from the automatic analysis of the translated linear hybrid automata. The first method, called clock translation, replaces constraints on nonlinear variables by constraints on clock variables. The second method, called linear phase-portrait approximation, conservatively overapproximates the phase portrait of a hybrid automaton using piecewise-constant polyhedral differential inclusions. Both methods are sound for safety properties. We illustrate both methods by using HYTECH, a symbolic model checker for linear hybrid automata, to automatically check properties of a nonlinear temperature controller and of a predator-prey ecology  相似文献   
3.
UHVCVD-grown Si/Si1- xGex/Si heterostructure was investigated by Photoreflectance spectroscopy (PR). The principle of PR used in semiconductor film was thoroughly described. According to the E1 transition energy in the Si1- xGex alloy, the Ge content in SiGe film with constant composition can be accurately characterized. In this study, determine the composition uniformity of larger diameter SiGe epiwafer by PR mapping technique was determined. These results show PR is very promising for Si1- xGex epilayer characterization with constant Ge content and can provide film measurements for production-worthy line monitor.  相似文献   
4.
Thin strain-relaxed Si0.8Ge0.2 films (57.6 nm) on the 30 keV Ar ion implantation Si substrates for different dose (1 × 1014, 5 × 1014, 3 × 1015 cm-2) were grown by ultra high vacuum chemical vapor deposition (UHVCVD) system.Rutherford backscattering/ion channeling (RBS/C), high resolution X-ray diffraction (HRXRD), Raman spectra as well as atomic force microscopy (AFM) were used to characterize these SiGe films. Investigations by RBS/C as well as HRXRD demonstrate that these thin Sio.8Geo.2 films could indeed epitaxially grow on the Ar ion implantation Si substrates. Under low dose ( 1 × 1014 cm-2) and medium dose (5 × 1014 cm-2) implantation conditions, the relaxation extents of SiGe films are 60.6% and 63.6%, respectively. However, high dose implantation (3 × 1015 cm-2) prompt the strain in epitaxial SiGe film to be close to full relaxation status (relaxation extent of 96.6% ). On the other hand, determinations of RBS/C also indicate the crystalline quality of SiGe film grown on high dose implantation Si substrate is nearly identical to that grown on low dose (1 × 1014 cm-2) implantation Si substrate.  相似文献   
5.
Dyeing wastewater collected in Kyoto city, Japan, was investigated for the occurrence of aryl hydrocarbon receptor (AhR) ligands by using an AhR-responsive reporter gene assay. Concentrated extracts of wastewater samples elicited a dose-dependent increase in AhR ligand activity, and several hydrophobic HPLC fractions of the extracts were highly effective in inducing AhR ligand activity. Three potential AhR ligands were isolated from these fractions and identified to be Disperse Red 92, Disperse Yellow 64, and 3'-hydroxybenzo[b]quinophthalone by using HPLC and LC-MS/MS. Disperse Red 92, which has also been detected in the treated effluent from a sewage plant receiving the wastewater, is an anthraquinone disperse dye showing weak AhR binding affinity in the assay. Disperse Yellow 64 and 3'-hydroxybenzo[b]quinophthalone are quinoline disperse dyes capable of activating the AhR at nanomolar concentrations. In particular, Disperse Yellow 64 is a highly potent AhR ligand that was 3 times more effective in inducing AhR ligand activity than beta-naphthoflavone in the assay. Quinoline disperse dyes are suggested to be a new class of xenobiotic AhR ligands which pose a danger to aquatic biota and human health.  相似文献   
6.
本文介绍了快速热处理技术的研究成果.包括:RHT设备,高剂量注入硅的RTA机理与最佳RTA条件选择,以及浅PN结制造,硅化物形成,BPSG回流和薄氧化层的快速氮化等RTP技术.  相似文献   
7.
Transformation of bisphenol A (BPA) by ammonia-oxidizing bacteria (AOB) Nitrosomonas europaea ATCC 19718 was investigated. On the basis of the ultraperformance liquid chromatography (UPLC) coupled to quadrupole time-of-flight mass spectrometry (Q-TOF MS) and nuclear magnetic resonance analysis, we found N. europaea could transform BPA into nitro- and dinitro-BPA, suggesting that abiotic nitration between the biogenic nitrite and BPA played a major role in the transformation of BPA in the batch AOB system. Nitrite concentrations, temperature, and pH values were the major factors to influence the reaction rate. Furthermore, the yeast estrogenic screening assay showed that the formed nitro- and dinitro-BPA had much less estrogenic activity as compared with its parent compound BPA. Similar reactions of abiotic nitration were considered for 4-n-nonylphenol (nNP) and 4-n-octylphenol (nOP) since nitro-nNP and nitro-nOP were detected by UPLC-Q-TOF MS. In addition, results from the local wastewater treatment plant (WWTP) showed the occurrence of nitro-BPA and dinitro-BPA during the biological treatment process and in the effluent, indicating that nitration of BPA is also a pathway for removal of BPA. Results of this study provided implication that AOB in the WWTPs might contribute to removal of selected endocrine-disrupting compounds (EDCs) through abiotic nitritation.  相似文献   
8.
微波低噪声SiGe HBT的研制   总被引:6,自引:2,他引:4  
利用3μm工艺条件制得SiGeHBT(HeterojunctionBipolarTransistor),器件的特征频率达到8GHz.600MHz工作频率下的最小噪声系数为1.04dB,相关功率增益为12.6dB,1GHz工作频率下的最小噪声系数为1.9dB,相关功率增益为9dB,器件在微波无线通信领域具有很大的应用前景  相似文献   
9.
基于Z参数的微波晶体管高频噪声网络分析方法   总被引:1,自引:0,他引:1  
For high-capacity wavelength division multiplexing(WDM) in optical fiber transmission systems, multi-wavelength light sources are needed to be operated at precisely-determined wavelength swith a fine separation of 0.8 or 1.6nm.Increasing efforts have been put into deve...  相似文献   
10.
利用Z参数噪声网络等效电路的分析方法,得到了用器件Z参数表示的微波双极晶体管噪声参数的表达式,通过对微波低噪声双极晶体管的高频参数进行测试和分析,并把器件的网络参数和物理参数相结合,来对器件的最小噪声系数进行计算和分析.  相似文献   
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