排序方式: 共有5条查询结果,搜索用时 15 毫秒
1
1.
2.
设计出了一种实现64级灰度显示的单片混合信号驱动芯片,它采用脉冲宽度调制方法和两级电压预充方式,适用于驱动132×64像素的无源OLED显示屏.芯片内部主要包括数字控制器,显示数据存取器,DC-DC电压转换器,参考电流产生器,电压预充电路产生器,64个行驱动电路和132个列驱动电路.它已经用Chartered0.35μm 18V高压CMOS工艺制作完成,芯片面积约为10mm×2mm.测试结果表明芯片性能良好,在电源低压为3V,高压为12V,显示电流为100mA并处于最高级灰度显示的条件下,芯片与面板的总功耗为294mW. 相似文献
3.
In order to minimize leakage current increase under total ionizing dose (TID) radiation in high density memory circuits, a new isolation technique, combining deep trench isolation (DTI) between the wells, local oxi- dation of silicon (LOCOS) isolation between the devices within the well, and a P-diffused area in order to limit leakage at the isolation edge is implemented in partly-depleted silicon-on-insulator (PD-SOI) technology. This ra- diation hardening technique can minimize the layout area by more than 60%, and allows flexible placement of the body contact. Radiation hardened transistors and 256 Kb flash memory chips are designed and fabricated in a 0.6 μm PD-SOI process. Experiments show that no obvious increase in leakage current is observed for single tran- sistors under 1 Mrad(Si) radiation, and that the 256 Kb memory chip still functions well after a TID of 100 krad(Si), with only 50% increase of the active power consumption in read mode. 相似文献
4.
5.
设计出了一种实现64级灰度显示的单片混合信号驱动芯片,它采用脉冲宽度调制方法和两级电压预充方式,适用于驱动132×64像素的无源OLED显示屏.芯片内部主要包括数字控制器,显示数据存取器,DC-DC电压转换器,参考电流产生器,电压预充电路产生器,64个行驱动电路和132个列驱动电路.它已经用Chartered0.35μm 18V高压CMOS工艺制作完成,芯片面积约为10mm×2mm.测试结果表明芯片性能良好,在电源低压为3V,高压为12V,显示电流为100mA并处于最高级灰度显示的条件下,芯片与面板的总功耗为294mW. 相似文献
1