异质栅氧化层轻掺杂漏石墨烯纳米条带p-i-n隧穿场效应管量子输运特性的研究

We perform a theoretical study of the effects of the lightly doped drain （LDD） and high-k dielectric on the performances of double gate p-i-n tunneling graphene nanoribbon field effect transistors （TFETs）. The models are based on non-equilibrium Green＇s functions （NEGF） solved self-consistently with 3D-Poisson＇s equations. For the first time, hetero gate dielectric and single LDD TFETs （SL-HTFETs） are proposed and investigated. Simulation results show SL-HTFETs can effectively decrease leakage current, sub-threshold swing, and increase on-off current ratio compared to conventional TFETs and Si-based devices; the SL-HTFETs from the 3p ＋ 1 family have better switching characteristics than those from the 3p family due to smaller effective masses of the former. In addition, comparison of scaled performances between SL-HTFETs and conventional TFETs show that SL-HTFETs have better scaling properties than the conventional TFETs, and thus could be promising devices for logic and ultra-low power applications.     

峰值掺杂结合线性掺杂对CNTFETs高频特性和开关特性影响

To overcome short-channel effects(SCEs) in high-performance device applications,a novel structure of CNTFET with a combination of halo and linear doping structure(HL-CNTFET) has been proposed.It has been theoretically investigated by a quantum kinetic model,which is based on two-dimensional non-equilibrium Green’s functions solved self-consistently with Poisson’s equations.We have studied the effect of halo doping and linear doping structure on static and dynamical performances of HL-CNTFET.It is demonstrated that a halo doping structure can decrease the drain leakage current and improve the on/off current ratio,and that linear doping can improve high-frequency and switching performance.     

火凤凰窗口汉字系统2.0版

本系统专为FoxBASE/dBASE应用软件开发而设计,主要功能有:①真窗口功能,可在屏幕任意位置打开最多8层窗口,窗口具有独立的坐标及显示控制,窗口关闭后能自动恢复窗口区域原有屏幕信息;②可以创建多种立体图形按钮和立体窗格菜单;③提供消隐清屏、平滑卷屏、移动显示等强大界面构造功能;④支持所有FoxBASE/dBASE应用程序直接利用鼠