Analysis of phosphorus removal and anaerobic selector performance in a full-scale activated sludge process in Singapore.

This paper analyses the performance of the anaerobic selector (A/O process) in a full-scale activated sludge process receiving mostly industrial sewage discharge (> 60%) in Singapore. In addition to the sludge settleability, enhanced biological phosphorus removal (EBPR) was studied. The sludge volume index (SVI) reduced from 200 to 80 ml g(-1) and foaming was suppressed significantly, indicating the effectiveness of the anaerobic selector in improving sludge settleability. The phosphorus removal efficiency was 66%, and 7.5 mg HAc-COD was consumed per mg PO4(3-) -P removed. In the anaerobic compartment, 31% of the SCOD and 73% of the acetic acid in the settled sewage were removed with PO4(3-) -P release of 14.1 mg PO4(3-)-P l(-1). The linear correlation between PO4(3-) -P release in the anaerobic compartment and PO4(3-) -P uptake in the aerobic compartment indicates that there is about 0.8 mg PO4(3-) -P release in the anaerobic compartment per mg PO34(3-) -P uptake in the aerobic compartment. The fates of volatile fatty acids (VFAs) and its short chain acids (SCAs) in the process were studied and discussed.     

Synthesis of amphiphilic magnetic microspheres by dispersion copolymerization of styrene and poly(ethylene oxide) macromonomer

Amphiphilic magnetic microspheres ranging in diameter from 5 to 100 µm were prepared by dispersion copolymerization of styrene and poly(ethylene oxide) vinylbenzyl (PEO‐VB) macromonomer (MPEO) in the presence of Fe₃O₄ magnetic fluid. The effects of various polymerization parameters on the average particle size were systematically investigated. The average particle size was found to increase with increasing styrene concentration and initiator concentration. It also increased with decreasing stabilizer concentration and molecular weight of MPEO. The content of the hydroxyl groups localized in the microspheres ranged from 0.01 to 0.2 mmol g^?1. © 2003 Society of Chemical Industry     

New hybrid fuzzy controller for direct torque control induction motor drives

A new hybrid fuzzy controller for direct torque control (DTC) induction motor drives is presented in this paper. The newly developed hybrid fuzzy control law consists of proportional-integral (PI) control at steady state, PI-type fuzzy logic control at transient state, and a simple switching mechanism between steady and transient states, to achieve satisfied performance under steady and transient conditions. The features of the presented new hybrid fuzzy controller are highlighted by comparing the performance of various control approaches, including PI control, PI-type fuzzy logic control (FLC), proportional-derivative (PD) type FLC, and combination of PD-type FLC and I control, for DTC-based induction motor drives. The pros and cons of these controllers are demonstrated by intensive experimental results. It is shown that the presented induction motor drive is with fast tracking capability, less steady state error, and robust to load disturbance while not resorting to complicated control method or adaptive tuning mechanism. Experimental results derived from a test system are presented confirming the above-mentioned claims.     

Modeling node mobility for reliable packet delivery in mobile ip networks

In this paper, we analyze node mobility for reliable packet delivery in mobile IP networks. In mobile IP, packets destined to roaming nodes are intercepted by their home agents and delivered via tunneling to their care of addresses (CoA). A mobile node may roam across multiple subnets. At each boundary crossing, a handoff is initiated such that the CoA is updated and a new tunnel is established. We consider both basic mobile IP handoff and smooth handoff. We find that reliable packet delivery in mobile IP networks can be modeled as a renewal process, because the retransmission over a new tunnel after each boundary crossing is independent of the previous history. We then derive the probability distribution of boundary crossings for each successful packet, based on which the packet reliable delivery time can be obtained. Our analytical model is derived based on a general distribution of residence time in a subnet and a general distribution of successful retransmission attempts in each subnet. The results can be readily applied to any distributions for both items. We also provide numerical examples to calculate the probability distribution of boundary crossings, and conduct simulations to validate our analytical results     

Reliability investigation of 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel

The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications.     

Peer drug associations and emotional restraint: Causes or consequences of adolescents' drug use?

A 3-wave longitudinal design was used to examine the relationships among emotional restraint, peer drug associations, and gateway drug use in a sample of 1,256 middle school students. Structural equation modeling was used to compare 3 models: (1) One model viewed drug use as a consequence of emotional restraint and peer variables; (2) 1 viewed drug use as a cause of restraint and peer variables; and (3) 1 included reciprocal effects. All 3 models fit the data fairly well. However, the reciprocal model fit the data significantly better than either of the others. Within this model, low emotional restraint was significantly related to subsequent increases in gateway drug use among boys. In contrast, peer drug models and peer pressure were not related to subsequent changes in gateway drug use. Changes in peer drug models were, however, predicted by previous levels of gateway drug use. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Stress analysis of spontaneous Sn whisker growth

Spontaneous Sn whisker growth is a surface relief phenomenon of creep, driven by a compressive stress gradient. No externally applied stress is required for the growth, and the compressive stress is generated within, from the chemical reaction between Sn and Cu to form the intermetallic compound Cu₆Sn₅ at room temperature. To obtain the compressive stress gradient, a break of the protective oxide on the Sn surface is required because the free surface of the break is stress-free. Thus, spontaneous Sn whisker growth is unique that stress relaxation accompanies stress generation. One of the whisker challenging issues in understanding and in finding effective methods to prevent spontaneous Sn whisker growth is to develop accelerated tests of whisker growth. Use of electromigration on short Sn stripes can facilitate this. The stress distribution around the vicinity and the root of a whisker can be obtained by using the micro-beam X-ray diffraction utilizing synchrotron radiation. A discussion of how to prevent spontaneous Sn whisker growth by blocking both stress generation and stress relaxation is given.     

Effect of Thickness of the p-AlGaN Electron Blocking Layer on the Improvement of ESD Characteristics in GaN-Based LEDs

The following letter presents a study regarding GaN-based light-emitting diodes (LEDs) with p-type AlGaN electron blocking layers (EBLs) of different thicknesses. The study revealed that the LEDs could endure higher electrostatic discharge (ESD) levels as the thickness of the AlGaN EBL increased. The observed improvement in the ESD endurance ability could be attributed to the fact that the thickened p-AlGaN EBL may partly fill the dislocation-related pits that occur on the surface of the InGaN-GaN multiple-quantum well (MQW) and that are due to the strain and the low-temperature-growth process. If these dislocation-related pits are not partly suppressed, they will eventually result in numerous surface pits associated with threading dislocations that intersect the InGaN-GaN (MQW), thereby reducing the ESD endurance ability. The results of the experiment show that the ESD endurance voltages could increase from 1500 to 6000 V when the thickness of the p-AlGaN EBL in the GaN LEDs is increased from 32.5 to 130 nm, while the forward voltages and light output powers remained almost the same.     

Reduced modified quadratures for quadratic membrane finite elements

Reduced integration is frequently used in evaluating the element stiffness matrix of quadratically interpolated finite elements. Typical examples are the serendipity (Q8) and Lagrangian (Q9) membrane finite elements, for which a reduced 2 × 2 Gauss–Legendre integration rule is frequently used, as opposed to full 3 × 3 Gauss–Legendre integration. This ‘softens’ these element, thereby increasing accuracy, albeit at the introduction of spurious zero energy modes on the element level. This is in general not considered problematic for the ‘hourglass’ mode common to Q8 and Q9 elements, since this spurious mode is non‐communicable. The remaining two zero energy modes occurring in the Q9 element are indeed communicable. However, in topology optimization for instance, conditions may arise where the non‐communicable spurious mode associated with the elements becomes activated. To effectively suppress these modes altogether in elements employing quadratic interpolation fields, two modified quadratures are employed herein. For the Q8 and Q9 membrane elements, the respective rules are a five and an eight point rule. As compared to fully integrated elements, the new rules enhance element accuracy due to the introduction of soft, higher‐order deformation modes. A number of standard test problems reveal that element accuracy remains comparable to that of the under‐integrated counterparts. Copyright © 2004 John Wiley & Sons, Ltd.     

Verification of submodeling technique in thermomechanical reliability assessment of flip-chip package assembly

In this paper we verified the submodeling technique applied in the thermomechanical reliability assessment of a flip-chip BGA under accelerated thermal cycling test conditions. Since the steady-state creep model was implemented for the solder bump to better represent its realistic mechanical behavior, submodeling procedures developed specifically for path-dependent thermomechanical problems were considered. A detailed global model for the flip-chip BGA was built up to verify submodeling solutions. This model also served as a benchmark to examine solution discrepancies caused by different simplifications of the global model.