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1.
The article describes the experience of implementing patient-focused care from a physician's perspective. Pitfalls that guarantee failure are presented, many of which are avoidable with early participation by all parties involved: administrators, nursing staff, physicians, and patients. Contamination of the process with downsizing needs, lack of support for staff in dealing with necessary change, loss of administrative commitment, and withholding of appropriated funds are among the key errors to be avoided. 相似文献
2.
A. Ivanov 《Journal of Electronic Testing》2002,18(4-5):361-362
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Various heat insulation materials produced at home and abroad are compared. The advantage of using natural nano-structured
materials is substantiated.
Translated from Novye Ogneupory, No. 7, pp. 41–44, July 2008. 相似文献
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V. N. Jmerik A. M. Mizerov T. V. Shubina A. V. Sakharov A. A. Sitnikova P. S. Kop’ev S. V. Ivanov E. V. Lutsenko A. V. Danilchyk N. V. Rzheutskii G. P. Yablonskii 《Semiconductors》2008,42(12):1420-1426
Features of plasma-assisted molecular-beam epitaxy of AlGaN compounds at relatively low temperatures of the substrate (no higher than 740°C) and various stoichiometric conditions for growth of the nitrogen- and metal-enriched layers are studied. Discrete submonolayer epitaxy for formation of quantum wells and n-type blocking layers without varying the fluxes of components was used for the first time in the case of molecular- beam epitaxy with plasma activation of nitrogen for the nanostructures with the Al x Ga1 ? x N/Al y Ga1 ? y N quantum wells. Structural and optical properties of the Al x Ga1 ? x N layers in the entire range of compositions (x = 0–1) and nanostructures based on these layers are studied; these studies indicate that there is photoluminescence at room temperature with minimum wavelength of 230 nm. Based on the analysis of the photoluminescence spectra for bulk layers and nanoheterostructures and their temperature dependences, it is concluded that there are localized states in quantum wells. Using the metal-enriched layers grown on the c-Al2O3 substrates, heterostructures for light-emitting diodes with Al x Ga1 ? x N/Al y Ga1 ? y N quantum wells (x = 0.4–0.5, y = x + 0.15) were obtained and demonstrated electroluminescence in the ultraviolet region of the spectrum at the wavelength of 320 nm. 相似文献
8.
E. P. Velikhov N. N. Ponomarev-Stepnoi V. G. Volkov G. G. Gorodetskii Yu. A. Zverkov O. P. Ivanov S. M. Koltyshev V. D. Muzrukova S. G. Semenov V. E. Stepanov A. V. Chesnokov A. D. Shisha 《Atomic Energy》2007,102(5):375-381
This article is devoted to work done in 2002–2006 as part of the unified project Reabilitatsiya to rehabilitate radiation
hazardous objects and sections of the radioactively contaminated territory of the Russian Science Center Kurchatov Institute.
The main objects of the rehabilitation work were old storage sites built for radioactive wastes on the territory of the Institute
when military and civilian nuclear technologies were under development. The structural features of the storage sites, including
the volumes and characteristics of the wastes stored, are presented. The salient aspects of the disposal sites, taken into
account during the rehabilitation work, are discussed. The organization of the rehabilitation operations and the sequence
in which they are performed, the special features of the technical design solutions used, the technological methods, and ways
for conducting the work are described.
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Translated from Atomnaya énergiya, Vol. 102, No. 5, pp. 300–306, May, 2007. 相似文献
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M. M. Zverev N. A. Gamov D. V. Peregoudov V. B. Studionov E. V. Zdanova I. V. Sedova S. V. Gronin S. V. Sorokin S. V. Ivanov P. S. Kop’ev 《Semiconductors》2008,42(12):1440-1444
Emission characteristics of an electron-beam-pumped Cd(Zn)Se/ZnMgSSe semiconductor laser are studied. The laser’s active region consists of a set of ten equidistant ZnSe quantum wells containing fractional-monolayer CdSe quantum-dot inserts and a waveguide formed by a short-period superlattice with the net thickness of ~0.65 μm. Lasing occurs at room temperature at a wavelength of 542 nm. Pulsed power as high as 12 W per cavity face and an unprecedentedly high efficiency of ~8.5% are attained for the electron-beam energy of 23 keV. 相似文献