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Characteristic mineral assemblage and special features of the composition of Au and Ag sulfides of gold-silver deposits have been established. The forms of the occurrence of Au and Ag in the minerals of the early and last stages have been analyzed. The conditions for the formation of uytenbogaardtite and petrovskaite in supergene and low-temperature hydrothermal processes have been considered. A thermodynamic model explaining their genesis in the oxidation zones is presented.  相似文献   
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Finite element simulations of the high-temperature behavior of single-phase γ, dual-phase α2+γ, and fully lamellar (FL) α2+γTiAl intermetallic alloy microstructures have been performed. Nonlinear viscous primary creep deformation is modeled in each phase based on published creep data. Models were also developed that incorporate grain boundary and lath boundary sliding in addition to the dislocation creep flow within each phase. Overall strain rates are compared to gain an understanding of the relative influence each of these localized deformation mechanisms has on the creep strength of the microstructures considered. Facet stress enhancement factors were also determined for the transverse grain facets in each model to examine the relative susceptibility to creep damage. The results indicate that a mechanism for unrestricted sliding of γ lath boundaries theorized by Hazzledine and co-workers leads to unrealistically high strain rates. However, the results also suggest that the greater creep strength observed experimentally for the lamellar microstructure is primarily due to inhibited former grain boundary sliding (GBS) in this microstructure compared to relatively unimpeded GBS in the equiaxed microstructures. The serrated nature of the former grain boundaries generally observed for lamellar TiAl alloys is consistent with this finding.  相似文献   
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An optoelectronic charge coupled device (OECCD) which is directly compatible with an incident optical signal is proposed. The nonlinear partial differential equation consisting of optical generation and recombination is solved in one dimension using the Crank-Nicolson finite-difference scheme. The charge transfer inefficiency is the main parameter considered for the calculation  相似文献   
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GaTe is a III–VI semiconductor which has layered structure with large anisotropy in electrical properties. Growth of single crystals by the Bridgman technique permitted the measurement of thermoelectric power in orthogonal directions from which the anisotropy of hole effective masses were determined for the first time. From resistivity and Hall effect measurements the carrier activation energies and scattering mechanisms between 10–300°K were found. Study of the temperature dependence of conductivity revealed a variety of conduction mechanisms including weak localization below 20°K, hopping conduction between 20–50 K and band conduction in and across the layer planes atT>70 K. Weak localization was confirmed through observation of negative magnetoresistance. TheIV characteristics showed quantized behaviour due to tunneling across potential barriers, which may be due to stacking faults between layer planes as observed by TEM studies.  相似文献   
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We have determined exciton energies for wurtzite CdS nanoparticles, both theoretically and experimentally. The empirical pseudopotential method has been used to calculate the bulk band structure. The discretization of reciprocal space was considered to get the energy gap and the corresponding exciton energy as a function of the nanoparticles size. The CdS nanoparticles were prepared by colloidal methods and the exciton energies were determined from optical absorption measurements. A good agreement between the calculated and the experimental exciton energies is obtained when an average over the experimental size distribution of the nanoparticles is included in the calculation.  相似文献   
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