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1.
In the recent sub-20 nm technology node, the process variability issues have become a major problem for scaling of MOS devices. We present a design for a strained Si/SiGe FinFET on an insulator using a 3D TCAD simulator. The impact of metal gate work function variability (WFV) on electrical parameters is studied. Such impact of WFV for different mole fractions (x) of the SiGe layer in a strained SOI-FinFET with varying grain size is presented. The results show that as the mole fraction is increased, the variability in threshold voltage (σVT) and off current (σIoff) is decreased; while, the variability of on-current (σIon) is increased. A notable observation is the distribution of electrical parameters approaches a normal distribution for smaller grain sizes. 相似文献
2.
Microsystem Technologies - This paper explained the dependency of collapse voltage on semiconductor device structural features (membrane diameter, membrane thickness and the vertical distance... 相似文献
3.
Debnath Sanjoy Arif Wasim Roy Sourav Baishya Srimanta Sen Debarati 《Wireless Personal Communications》2022,124(2):1375-1421
Wireless Personal Communications - The performance of wireless communication network is important in emergency rescue operations while ensuring optimum usage of limited wireless resources. Due to... 相似文献
4.
Yesmin Ara Begum Pitambar Baishya Manas Jyoti Das Sourav Chakraborty Sankar Chandra Deka 《International Journal of Food Science & Technology》2020,55(11):3455-3462
Dietary fibre (DF)-anthocyanin formulation was incorporated in bread to develop anthocyanin rich DF powder (ARDFP) fortified bread. Prior to incorporation of DF-anthocyanin formulation in bread preparation, the cytotoxicity of DF and anthocyanin extracts was assessed. The effect of incorporation of different level of ARDFP with moisture on bread quality characteristics such as specific volume, textural, colour, sensory properties and starch digestibility was studied. The results revealed that extracted DF and anthocyanin of culinary banana bracts were nontoxic towards peripheral blood mononuclear cell and cytotoxic towards HT29 cancerous cell line. Incorporation of 2% ARDFP with 68% moisture was rated as best with higher specific volume (5.50 cm3 g−1), improved textural properties (high springiness and cohesiveness), anthocyanin content (9.08 mg per 100 g), colour characteristics and sensory acceptability next to control. The in vitro digestibility study suggested increased incorporation of ARDFP in bread flour reduced the rate of starch digestibility (0.0035 min−1). 相似文献
5.
In this article, a pocket doped hetero‐stacked L‐shaped gate silicon‐on‐insulator (SOI) tunnel FET (HS‐LG‐TFET) has been proposed and investigated. The band‐to‐band tunneling (BTBT) feature of LG‐TFET in a direction perpendicular to the channel facilitates higher ON current due to relatively larger tunneling area. The channel appears to be U‐shaped that is primarily distributed along the vertical direction, which increases the device scalability. Besides, the HS source architecture owns an upper source layer, which consists of larger bandgap material silicon and an underlying source layer, which consists of smaller bandgap material germanium. This underlying layer of smaller bandgap material in HS‐LG‐TFET provides enhanced ON current as well as steeper subthreshold swing behavior. The electrical noise behavior of the proposed structure is addressed to test its viability. Furthermore, a complete radio frequency (RF) characterization, including transconductance, capacitances, cutoff frequency, gain bandwidth product, maximum oscillation frequency, transit time, and minimum noise figure of the proposed device are analyzed to examine its analog applicability. Moreover, for checking the reliability issues associated with temperature, the temperature dependence on transfer and RF characteristics are also explored and presented. Further, the non‐quasi‐static equivalent circuit of the proposed structure is presented to analyze its behavior in the high frequency range. 相似文献
6.
This article investigates the impact of the p–p+ junction (at the body-substrate interface) on different direct current (DC) and analog/radio frequency (RF) performance parameters of a newly invented structure called vertical super-thin body field effect transistor (VSTB FET) through a well-calibrated TCAD tool. At a fixed body doping, the influence of p–p+ junction was inspected for different substrate doping (Ns); which reveals that Ns has a robust control on the device electrostatics. Interestingly, higher Ns is seen to significantly suppress different short channel effects (SCEs), which in turn helps to improve various DC parameters excellently. An increase in Ns from 1015 to 1018 cm?3 improves off-state leakage current and on-to-off current ratio by three orders of magnitude. Also, such a change in Ns decreases subthreshold swing and drain-induced-barrier-lowering by 8.78 mV/dec and 11.15 mV/V, respectively. The underlying physics behind such improvement at higher Ns is explored through the off-state channel electron density profiles corresponding to different Ns values. Further, different analog/RF parameters such as transconductance, input capacitance, gate-drain capacitance, output conductance, gain-bandwidth-product, and transconductance frequency product (TFP) show slight improvement for increasing Ns. In contrast, TGF, GFP, and GTFP offer large enhancement at higher Ns. This study is expected to demonstrate the significance of Ns on device performance. 相似文献
7.
Koushik Guha Mithlesh Kumar Ajay Parmar Srimanta Baishya 《Microsystem Technologies》2016,22(11):2633-2640
This Paper reports on investigation of High Con Coff ratio Capacitive Shunt RF MEMS Switch and detailed comparison between uniform three meander beam with non-uniform single meander beam RF MEMS switch. RF MEMS Switches are designed for operation in the range 5–40 GHz. Pull in analysis is performed with gold as a beam material. Simulation reveals that use of high K dielectric material can drastically improve the capacitance ratio of switch. For the same geometry, pull in voltage is 2.45 V for HfO2, 2.7 V for Si3N4 and Capacitive Ratio of the switch with Si3N4 is 83.75 and Capacitive Ratio with HfO2 is 223 at 2g0 (air gap) and 0.8 μm thickness of beam. The Radio Frequency performance of RF MEMS switch is obtained by scattering parameters (insertion loss, Return loss and isolation) which are mainly dominated by down to up capacitance ratio and MEMS bridge geometries. RF analysis shows that insertion loss as low as ?0.4 dB at 20 GHz and isolation as high as 80 dB at 20 GHz can be achieved. Investigation of three uniform meander Design and non-uniform single meander design reveals that use of non-uniform design reduces the design complexity and saves substrate area still maintaining almost same device performance. S-parameter analysis is carried out to compare device performance for both structures. DC analysis of the proposed switch is carried out using Coventorware and RF analysis is performed in MATLAB. 相似文献
8.
Pradhan Dristhi Baishya Himakshi Das Amit Baran 《Food science and biotechnology》2022,31(11):1443-1450
Food Science and Biotechnology - The study aimed to investigate the effects of various pretreatment methods on sohiong fruit juice during the microfiltration process. The ultrasound,... 相似文献
9.
An analytical subthreshold surface potential model for short-channel pocket-implanted (double-halo) MOSFET is presented. The effect of the depletion layers around the source and drain junctions on channel depletion layer depth, which is very important for short-channel devices, is included. Using this surface potential, a drift-diffusion based analytical subthreshold drain current model for short-channel pocket-implanted MOSFETs is also proposed. A physically-based empirical modification of the channel conduction layer thickness that was originally proposed for relatively long-channel conventional device is made for such short-channel double-halo devices. Very good agreement for both the surface potential and drain current is observed between the model calculation and the prediction made by the 2-D numerical device simulation using Dessis. 相似文献
10.
ZnS-PVA nanocomposite thin films are grown by chemical bath deposition (CBD) method by varying the concentration of zinc source. Formation of nanocrystalline hexagonal ZnS is confirmed by X-ray diffraction. Hexagonal form is predominant at some lower concentration. The morphological properties of the films are determined by transmission electron microscope (TEM). The particle size as given by TEM indicates increase in particle size. Bandgap measured from UV-Visible transmission spectra shows a decreasing trend with decrease of Zn source concentration. Photoluminescence (PL) measurement showed blue emission centred at 417 nm and that the intensity decreases with decrease in Zn source concentration. 相似文献