Control of peak sidelobe level in adaptive arrays

Adaptive beamforming techniques are now widely used to reject interference (jammer/clutter) signals in radar, communication, and sonar applications. In adaptive arrays using the sample matrix inversion (SMI) algorithm, inadequate estimation of the covariance matrix results in adaptive antenna patterns with high sidelobes and distorted mainbeams. In this paper, a method is proposed to precisely control the peak (rather than average) sidelobe level of adaptive array patterns. The proposed method is also generalized to adaptive array antennas with moderate bandwidth and large random amplitude and phase errors. Theoretical analysis and simulation results are provided to illustrate the performance of the method proposed     

Structural and chemical analysis of C : H,O /Si : H,O multilayers deposited by reactive RF sputtering

Hydro-oxygenated carbon (C : H,O) and silicon (Si : H,O) layers are deposited by RF sputtering of graphite and silicon targets in a mixture of argon, hydrogen and oxygen gases. C : H,O/Si : H,O/C : H,O/Si : H,O... multilayers are obtained by sequential deposition of C : H,O and Si : H,O layers. Infrared (IR) spectroscopy, Grazing Incidence X-ray Diffraction (GIXD) and X-ray Photoelectron Spectroscopy (XPS) techniques have been used to analyse the formed multilayers. The IR spectra made on as deposited structures show the presence of Si---C, Si---O, C---O, Si---H, C---H and C=C bonds. This result indicates an interfacial reactivity between Si : H,O and C : H,O layers. The latter result is confirmed by the XPS measurements. After an annealing at 850°c for two hours under argon atmosphere (10^-3 mbar), the concentration of the Si---C bonds is increased by a factor two while the Si---H and C---H bonds disappear complet The GIXD measurements show that the multilayers are amorphous when annealed below 750°C, and they are crystallized with the formation of the α-SiC phase if the heat treatment is made at 850°C. The mean size of the microcrystallites is 50 Å about.     

Improvement of RCA transistor using RTA annealing after theformation of interfacial oxide

A polysilicon emitter RCA transistor (an ultra-thin interfacial oxide layer exists between polysilicon and silicon emitter) is presented which can operate at 77 K for the first time. An ultra-thin (1.5 nm) interfacial oxide layer is grown deliberately between polysilicon and silicon emitter using RCA oxidation and excellent device stability is obtained after rapid thermal annealing (RTA) treatment in nitrogen atmosphere. The RCA transistor exhibits good electrical performance at very low temperature for an emitter area of 3 × 8 μm². The maximum toggle frequency of a 1:2 static divider is 1.2 GHz and 732 MHz at 300 K and 77 K, respectively     

A One-Dimensional Nonlocal Damage-Plasticity Model for Ductile Materials

This paper presents a new 1-D non-local damage-plasticity deformation model for ductile materials. It uses the thermodynamic framework described in Houlsby and Puzrin (2000) and holds, nevertheless, some similarities with Lemaitre’s (1971) approach. A 1D finite element (FE) model of a bar fixed at one end and loaded in tension at the other end is introduced. This simple model demonstrates how the approach can be implemented within the finite element framework, and that it is capable of capturing both the pre-peak hardening and post-peak softening (generally responsible for models instability) due to damage-induced stiffness and strength reduction characteristic of ductile materials. It is also shown that the approach has further advantages of achieving some degree of mesh independence, and of being able to capture deformation size effects. Finally, it is illustrated how the model permits the calculation of essential work of rupture (EWR), i.e. the specific energy per unit cross-sectional area that is needed to cause tensile failure of a specimen.     

Influence of the preparation conditions on the size and morphology of nanocrystalline lanthanum orthoferrite

Nanocrystalline LaFeO₃ is prepared by the dehydration of coprecipitated lanthanum and iron(III) hydroxides. It is shown that the behavior of the samples during heating and the size distribution of LaFeO₃ nanocrystals can be considerably different depending on the scheme used for coprecipitation of lanthanum and iron hydroxides; independently of the method employed for coprecipitation of the initial compounds, sintering of the samples at 950°C leads to the formation of lanthanum orthoferrite crystals up to 100 nm in size.     

HSDPA部署策略及覆盖、容量规划

本文介绍了HSDPA的发展背景,针对HSDPA的主要技术特点,依据市场发展规划、用户需求等方面对HSDPA部署进行探讨,并对HSDPA的覆盖与容量方面进行规划分析.     

Tunable laser-based design and analysis for fractional lambda switches

Fractional lambda switching (FlambdaS) is a novel approach for traffic management over all-optical networks with sub-wavelength provisioning capability. The unique characteristic of FlambdaS is the utilization of UTC (coordinated universal time) for switching with minimum or no buffers. Several central research issues are still open in FlambdaS and need to be formally defined and analyzed. In this paper, we introduce three novel switch designs that are based on the use of tunable lasers (which can be replaced in the future with wavelength converters). First, the paper presents analytical results of scheduling feasibility, which measures the total number of possible different schedules for each switch design. Then it is shown that the architecture with the highest scheduling feasibility is strictly non blocking in the space domain. Next, the paper provides a closed form analysis of the blocking probability in the time domain, which is applicable for any strictly non-space blocking switch, using combinatorics. In addition, the paper provides measures of the switching hardware complexity, which, for the strictly non-blocking architecture, has the same switching complexity as Clos interconnection network, i.e., O(N'radic(N')) where N' is the number of optical channels.