Synthesis and Characterization of Nanostructured Cerium Dioxide Thin Films Deposited by Ultrasonic Spray Pyrolysis

Nanostructured thin films of cerium dioxide have been prepared on single-crystalline silicon substrates by ultrasonic spray pyrolysis using cerium acetylacetonate as a metal–organic precursor dissolved in anhydrous methanol and acetic acid as an additive. The morphology, structure, optical index, and electrical properties were studied by X-ray diffraction, scanning electron microscopy, atomic force microscopy, ellipsometry, and impedance spectroscopy. The use of additives is very important to obtain crack-free films. The substrate temperature and flow rate was optimized for obtaining smooth ( R _a<0.4 nm), dense ( n >2), and homogeneous nanocrystalline films with grain sizes as small as 10 nm. The influence of thermal annealing on the structural properties of films was studied. The low activation energy calculated for total conductivity (0.133 eV) is attributed to the nanometric size of the grains.     

Ultrastructural alterations during embryonic rats' lung development caused by ozone

Ozone (O3) is an oxidizing agent that acts on phospholipids, proteins and sugars of cellular membranes producing free radicals, which cause oxidative damages. The O3 exposure has been used as a model to study oxidative stress, in which the respiratory airways represent the entrance to the organism. In this study, ultrastructural alterations were identified at the bronchiolar level during the intra-uterine lung development, using an O3 exposure model in pregnant rats during 18, 20 and 21 days of gestation. Twelve pregnant Wistar rats, six controls and six exposed to 1 ppm O3 inhalation during 12 h per day, were used. The rats were sacrificed at gestational days 18, 20 and 21; the fetuses were obtained and their lungs dissected. The ultrastructural analysis evidenced swollen mitochondria, cytoplasmic vacuolization of the epithelial cells and structural disorder caused by the oxidative stress. At gestation day 20, flake-off epithelial cells and laminar bodies in the bronchiolar lumen were observed. In the 21-gestation-day group, the mitochondria were edematous and their cristae were disrupted by the damage caused in mitochondrial membranes.     

Semiconductor behavior of 2,5-aromatic disubstituted pyrroles,viewed from an experimental and theoretical perspective

Theoretical calculations were performed on 2,5-aromatic substituted pyrroles which have a nitro-benzene or a cyano-benzene link to the nitrogen atom of the pyrrole fragment. The molecules manifested interesting semiconductor behavior that was confirmed when thin films were prepared and their corresponding electrical characterization was undertaken. The reason for this behavior is discussed, with reference to the electron-withdrawing feature of the substituents in the benzene chain.     

Progressive Parametric Query Optimization

Commercial applications usually rely on pre-compiled parameterized procedures to interact with a database. Unfortunately, executing a procedure with a set of parameters different from those used at compilation time may be arbitrarily sub-optimal. Parametric query optimization (PQO) attempts to solve this problem by exhaustively determining the optimal plans at each point of the parameter space at compile time. However, PQO is likely not cost-effective if the query is executed infrequently or if it is executed with values only within a subset of the parameter space. In this paper we propose instead to progressively explore the parameter space and build a parametric plan during several executions of the same query. We introduce algorithms that, as parametric plans are populated, are able to frequently bypass the optimizer but still execute optimal or near-optimal plans.     

Visible electroluminescence from silicon nanoclusters embedded in chlorinated silicon nitride thin films

Visible electroluminescence (EL) has been obtained from devices with active layers of silicon nanocrystals embedded in chlorinated silicon nitride (Si-nc/SiN_x:Cl) thin films, deposited by remote plasma enhanced chemical vapour deposition, using SiCl₄/NH₃/H₂/Ar. The active nc-Si/SiN_x:Cl film was sandwiched between Al contacts and a transparent conductive contact of ZnO_x:Al deposited by the pyrosol process. White EL centred at around 600 nm was observed, with a turn-on voltage of 5 V, and the intensity increasing as a function of voltage. Recombination between electron-hole pairs generated in the Si-nc by electron impact ionization is proposed as the EL mechanism.     

ZrAlO ternary oxide as a candidate for high-k dielectrics

ZrAlO thin films were prepared by the pyrosol process. Four different cases were considered taking as basis a solution of 0.025 M zirconium acetylacetonate (ZrAAc) and 5 at% of aluminum acetylacetonate (AlAAc) dissolved in pure methanol. Films of case A, were deposited with the mentioned solution and subjected to rapid thermal annealing (RTA). For case B, a small volume of water was added to start solution. Case C, were similar samples of case B, but with a post-deposition RTA. Case D, were Si/Al₂O₃/ZrAlO/Al stacks with post-deposition RTA, using water in the start solution. XPS profiles show that the relative chemical composition of deposited materials is affected by the volume of water added (Vw). The aluminum concentration in the films acquires values as high as or higher than zirconium concentration for increasing Vw. All the prepared samples were amorphous as indicated by the X-ray diffraction (XRD) spectra, even for large integration times. Current–voltage (I–V) and capacitance measurements were carried out in metal–insulator–metal (MIM) devices (Corning-glass/TCO/ZrAlO/Al) and I–V and simultaneous capacitance–voltage (C–V) measurements were performed in metal–oxide–semiconductor (MOS) devices (Si/ZrAlO/Al and Si/Al₂O₃/ZrAlO/Al). Leakage currents of the order of 10⁻⁴ A/cm², were typically obtained in MIM devices, whereas for some MOS devices, leakage currents of the order of 10⁻⁷ A/cm² were obtained. Dielectric constant (k) values of the order of 24 were calculated for MIM devices and k values ranging from 12.5 up to 17 were calculated for MOS devices.     

Raman scattering by confined optical phonons in Si and Ge nanostructures

A microscopic theory of the Raman scattering based on the local bond-polarizability model is presented and applied to the analysis of phonon confinement in porous silicon and porous germanium, as well as nanowire structures. Within the linear response approximation, the Raman shift intensity is calculated by means of the displacement-displacement Green's function and the Born model, including central and non-central interatomic forces. For the porous case, the supercell method is used and ordered pores are produced by removing columns of Si or Ge atoms from their crystalline structures. This microscopic theory predicts a remarkable shift of the highest-frequency of first-order Raman peaks towards lower energies, in comparison with the crystalline case. This shift is discussed within the quantum confinement framework and quantitatively compared with the experimental results obtained from porous silicon samples, which were produced by anodizing p--type (001)-oriented crystalline Si wafers in a hydrofluoric acid bath.     

Effect of acetic acid and water content in the spray solution on structural,morphological, optical and electrical properties of Al and In co-doped zinc oxide thin films

Aluminium and indium co-doped zinc oxide (AIZO) thin films were deposited using ultrasonic spray pyrolysis. Depositions were performed by varying the acetic acid and water content in the spraying solution which resulted in the formation of different nanostructures like hexagons, flowers, chisels, curved nanostructures, hexagonal pyramids, super grown hexagons, and inter-connected nanostructures. Further, the physical properties such as structural, optical, electrical, and surface texture parameters were examined. The structural studies showed that films were of crystalline nature, with different crystallite sizes and grown with a preferential orientation along (002) plane. The optical transmittance assessments proved that films were highly transparent (>?80%) in the visible region. The electrical sheet resistance was found to be in the range 29–1K Ω/□. Surface parameters like average roughness, root mean square roughness, and peak-valley height values helped to understand the homogeneity of the thin films. Finally, the suitability of AIZO films for transparent conductive oxide applications were tested by estimating the figure of merit (FOM). Among the different solution conditions, films fabricated using a starting solution containing 25 ml of acetic acid and 25 ml of water exhibited the lowest resistivity (2.47?±?0.03?×?10^?3 Ω-cm) along with the highest FOM (5.83?±?0.42?×?10^?3/Ω).