排序方式: 共有6条查询结果,搜索用时 15 毫秒
1
1.
Egle Juskelyte Ramunas Lygaitis Gintaras Buika Jolita Ostrauskaite Dalius Gudeika Juozas Vidas Grazulevicius Vygintas Jankauskas 《Reactive and Functional Polymers》2010,70(2):81-87
The synthesis, optical, thermal, and photoelectrical properties of new carbazole-based hydrazone monomers, polymers, and twin compounds are reported. All the synthesized materials are capable of glass formation. Their glass transition temperatures range from 27 to 90 °C. The ionization potentials of the films of carbazole-based hydrazones measured by the electron photoemission technique range from 5.18 to 5.48 eV. Hole-drift mobilities in the amorphous films of the synthesized hydrazone monomers measured by the time-of-flight technique at room temperature reach 10?4 cm2/(V s) at high applied electric fields. 相似文献
2.
Jucius Dalius Lazauskas Algirdas Grigaliūnas Viktoras Abakevičienė Brigita Smetona Saulius Tamulevičius Sigitas 《Microsystem Technologies》2018,24(2):1115-1125
Microsystem Technologies - This paper describes application of UV-NIL technique for the fabrication of hexagonal OrmoComp microlens arrays on flexible fluoropolymer substrates having exceptional... 相似文献
3.
Alvydas Lisauskas Maris Bauer Sebastian Boppel Martin Mundt Bassam Khamaisi Eran Socher Rimvydas Venckevičius Linas Minkevičius Irmantas Kašalynas Dalius Seliuta Gintaras Valušis Viktor Krozer Hartmut G. Roskos 《Journal of Infrared, Millimeter and Terahertz Waves》2014,35(1):63-80
We summarize three lines of development and investigation of foundry-processed patch-antenna-coupled Si MOSFETs as detectors of THz radiation: (i) Exploiting the pinciple of plasma-waved-based mixing in the two-dimensional electron gas of the transistors’ channels, we demonstrate efficient detection at frequencies as high as 9 THz, much above the transit-time-limited cut-off frequencies of the devices (tens of GHz). Real-time imaging at 600 GHz with a 12 × 12 detector array is explored. (ii) Given the limited THz power usually available for applications, we explore imaging with enhanced sensitivity in heterodyne mode. We show that real-time operation of a 100 × 100-pixel heterodyne camera should be possible at 600 GHz with a better dynamic range (30 dB) than for direct power detection (20 dB), even if only a quarter-milliwatt of local-oscillator power, distributed radiatively over all detector pixels, is available. (iii) Finally, we present an all-electronic raster-scan imaging system for 220 GHz entirely based on CMOS devices, combining the CMOS detectors with an emitter circuit implemented in a 90-nm CMOS process and delivering radiation with a power on the 100- μW scale. Considering progress in the field, we anticipate that the emitter concept of oscillator-based power generation with on-chip frequency multiplication will carry well into the sub-millimeter-wave regime. 相似文献
4.
5.
Wojciech Knap Mikhail Dyakonov Dominique Coquillat Frederic Teppe Nina Dyakonova Jerzy Łusakowski Krzysztof Karpierz Maciej Sakowicz Gintaras Valusis Dalius Seliuta Irmantas Kasalynas Abdelouahad El Fatimy Y. M. Meziani Taiichi Otsuji 《Journal of Infrared, Millimeter and Terahertz Waves》2009,30(12):1319-1337
Resonant frequencies of the two-dimensional plasma in FETs increase with the reduction of the channel dimensions and can reach the THz range for sub-micron gate lengths. Nonlinear properties of the electron plasma in the transistor channel can be used for the detection and mixing of THz frequencies. At cryogenic temperatures resonant and gate voltage tunable detection related to plasma waves resonances is observed. At room temperature, when plasma oscillations are overdamped, the FET can operate as an efficient broadband THz detector. We present the main theoretical and experimental results on THz detection by FETs in the context of their possible application for THz imaging. 相似文献
6.
Wojciech Knap Salman Nadar Hadley Videlier Stephane Boubanga-Tombet Dominique Coquillat Nina Dyakonova Frederic Teppe Kristoph Karpierz Jerzy ?usakowski Maciej Sakowicz Irmantas Kasalynas Dalius Seliuta Gintaras Valusis Taiichi Otsuji Yahya Meziani Abdel El Fatimy Simon Vandenbrouk Kamel Madjour Didier Th��ron Christophe Gaqui��re 《Journal of Infrared, Millimeter and Terahertz Waves》2011,32(5):618-628
Resonant frequencies of the two-dimensional plasma in field effect transistors (FETs) increase with the reduction of the channel dimensions and can reach the Terahertz (THz) range. Nonlinear properties of the plasma/electron gas in the transistor channel can be used for the rectification and detection of THz radiation. The excitation of plasma waves by sub-THz and THz radiation was demonstrated for short gate transistors at cryogenic temperatures. At room temperature plasma oscillations are usually overdamped, but the FETs can still operate as efficient broadband rectifiers/detectors in the THz range. We present a few recent experimental results on THz detection by FETs showing some new ways of improvement of FETs for THz imaging at room temperature as well as the new physical phenomena like detection in quantizing magnetic fields. We also demonstrate THz emission properties of GaN based FETs. 相似文献
1