Self-identification algorithm for zeolite-based thermal capacity gas sensor

Microsystem Technologies - We demonstrate a new operation mode of thermal gas sensor based on thermal capacity extraction with identification algorithm. The system is a silicon microstructure...     

Micro-electro-mechanical systems fast fabrication by selective thick polysilicon growth in epitaxial reactor

A thick layer selective polysilicon growth technique has been developed for micro-electro-mechanical systems (MEMS) fabrication. It allows fast MEMS fabrication without using silicon on insulator wafers or deep ICPRIE etching. The fabrication technique is based on two main steps: a first seed layer of polysilicon is deposited and patterned; the second step consists in the selective growth of this layer in an epitaxial reactor. The first part of this work is devoted to the optimisation of growth parameters. Afterwards, this technique is applied for fabrication of different kinds of actuators, involving films several microns thick with good mechanical properties such as a low mechanical stress and a low roughness of the polysilicon film surface. Furthermore, thermal actuator prototypes were fabricated by using this technique;showing good mechanical properties and high reliability.     

Purest ever example-based machine translation: Detailed presentation and assessment

We have designed, implemented and assessed an EBMT system that can be dubbed the “purest ever built”: it strictly does not make any use of variables, templates or patterns, does not have any explicit transfer component, and does not require any preprocessing or training of the aligned examples. It uses only a specific operation, proportional analogy, that implicitly neutralizes divergences between languages and captures lexical and syntactic variations along the paradigmatic and syntagmatic axes without explicitly decomposing sentences into fragments. Exactly the same genuine implementation of such a core engine was evaluated on different tasks and language pairs. To begin with, we compared our system on two tasks of a previous MT evaluation campaign to rank it among other current state-of-the-art systems. Then, we illustrated the “universality” of our system by participating in a recent MT evaluation campaign, with exactly the same core engine, for a wide variety of language pairs. Finally, we studied the influence of extra data like dictionaries and paraphrases on the system performance.     

Horizontal buried channels in monocrystalline silicon

A thick layer selective polysilicon growth technique has been developed for micro-electro-mechanical systems (MEMS) fabrication. It allows fast MEMS fabrication without using silicon on insulator wafers or deep ICPRIE etching. The fabrication technique is based on two main steps: a first seed layer of polysilicon is deposited and patterned; the second step consists in the selective growth of this layer in an epitaxial reactor. The first part of this work is devoted to the optimisation of growth parameters. Afterwards, this technique is applied for fabrication of different kinds of actuators, involving films several microns thick with good mechanical properties such as a low mechanical stress and a low roughness of the polysilicon film surface. Furthermore, thermal actuator prototypes were fabricated by using this technique;showing good mechanical properties and high reliability.

     

A multiplex culture system for the long‐term growth of fission yeast cells

Maintenance of long‐term cultures of yeast cells is central to a broad range of investigations, from metabolic studies to laboratory evolution assays. However, repeated dilutions of batch cultures lead to variations in medium composition, with implications for cell physiology. In Saccharomyces cerevisiae, powerful miniaturized chemostat setups, or ministat arrays, have been shown to allow for constant dilution of multiple independent cultures. Here we set out to adapt these arrays for continuous culture of a morphologically and physiologically distinct yeast, the fission yeast Schizosaccharomyces pombe, with the goal of maintaining constant population density over time. First, we demonstrated that the original ministats are incompatible with growing fission yeast for more than a few generations, prompting us to modify different aspects of the system design. Next, we identified critical parameters for sustaining unbiased vegetative growth in these conditions. This requires deletion of the gsf2 flocculin‐encoding gene, along with addition of galactose to the medium and lowering of the culture temperature. Importantly, we improved the flexibility of the ministats by developing a piezo‐pump module for the independent regulation of the dilution rate of each culture. This made it possible to easily grow strains that have different generation times in the same assay. Our system therefore allows for maintaining multiple fission yeast cultures in exponential growth, adapting the dilution of each culture over time to keep constant population density for hundreds of generations. These multiplex culture systems open the door to a new range of long‐term experiments using this model organism. © 2017 The Authors. Yeast published by John Wiley & Sons, Ltd.     

Cervical dysplasia: is there a role for hysterectomy?

Cervical intraepithelial neoplasia are usually treated by conservative procedures. Hysterectomy straightaway would have advantages but some drawbacks; reasons are listed.     

Horizontal buried channels in monocrystalline silicon

This paper reports, horizontal buried channels in monocrystalline silicon. Those channels are few microns wide and height and several hundred microns long. The main applications for those buried channels are micro-fluidic networks for MEMS devices and cooling systems for integrated circuits. Their fabrication is based on integrated circuit standard processes such as selective monocrystalline epitaxial growth and high temperature annealing. The major interest of the method is its compatibility with integrated circuit manufacturing technology.     

Plastic deformation of wadsleyite: IV Dislocation core modelling based on the Peierls–Nabarro–Galerkin model

In this paper, we determine dislocation core structures and Peierls stresses of wadsleyite, a high-pressure mineral present in the Earth mantle. We use a Peierls–Nabarro model combined with a finite-element method in which we introduce two-dimensional generalized stacking fault energies. Several potential slip planes of wadsleyite are considered. The results show that dislocations in this mineral can exhibit complex dislocation cores with linear or non-collinear dissociation and even three-dimensional dislocation cores. The calculation of the Peierls stresses gives information on the potential activity of slip systems governing the plasticity of wadsleyite. Our study confirms experimental observations that ½〈1 1 1〉{1 0 1} is the easiest slip system in this structure at high-pressure and that [1 0 0](0 1 0) is the second easiest. Both these easily slip systems have dislocations that dissociate into collinear partial dislocations. In contrast [0 1 0] dislocations with very large Burgers vector (11.2 Å) are stabilized by complex dissociations involving four partial dislocations.