Controlling thickness to tune performance of high-mobility transparent conducting films deposited from Ga-doped ZnO ceramic target

Structure modification has been found to tune significantly the transparent-conducting performance, especially mobility and conductivity of hydrogenated Ga-doped ZnO (HGZO) films. The strong correlation between film thickness and mobility of the films is revealed. The mobility increases quickly with increasing the thickness from 350 to 900 nm, and then tends to be saturated at further thicknesses. A higher mobility than 50 cm²/Vs can be achieved, which is an extra-high value for polycrystalline ZnO films deposited by using the sputtering technique. The thickness-dependent mobility originates from scatterings on grain boundaries and dislocation-induced defects controlled by thin-film growth. Based on the Volmer-Weber model, an expansion model is built up to describe the thickness-dependent crystal growth of the HGZO films, especially at the thick films. As a result, the 800 nm-thick HGZO film obtains the highest performance with high mobility of 51.5 cm²/Vs, low resistivity of 5.3 × 10^?4 Ωcm, and good transmittance of 83.3 %.     

Advanced Surface of Fibrous Activated Carbon Immobilized with FeO/TiO2 for Photocatalytic Evolution of Hydrogen under Visible Light

FeO-doped TiO₂ nanoparticle photocatalysts were immobilized onto the surface of fibrous activated carbon (ACF) via a sol-gel process. As an adsorbent and photocatalyst, FeO-TiO₂ on immobilized ACFs (FeO-TiO₂/ACF) greatly improved the photocatalysis rate of hydrogen production as compared with pure TiO₂ and ACF-TiO₂ under UV irradiation and visible light. The addition of ACFs surface significantly reduced the photogenerated pairs of electrons-hole recombination, thereby promoting the photocatalysis action of doped photo-metal oxides of FeO-TiO₂. Co-doping of FeO onto the lattice of the TiO₂ approach can improve the absorption activity of visible light through photo-metal oxide of TiO₂ and further enhance hydrogen production under visible light. The photocatalytic fabrics (FeO-TiO₂/ACF) were effortlessly split out from the experimental solution for re-utilization and exhibited high stability even after five complete regeneration cycles.     

Development of Bi(Pb)-2223/Ag pancake-shaped and solenoidal coils

High temperature superconducting (HTSC) multifilamentary (MT) Bi(Pb)-2223/Ag tapes with reproducible critical current density of between 15000 and 20000 A/cm² at 77 K in self field have been achieved using the standard flat-rolling method as the intermediate deformation between sintering periods. Long lengths of Bi(Pb)-2223/Ag MT tapes up to 43 m prepared by the conventional method of powder-in-tube (PIT) have been successfully produced on a laboratory scale. Several coils have been fabricated from sections of the long length tape, using the co-wound wind-and-react (W&R) procedure for the pancake-shaped and the singly-wound W&R as well as R&W procedure for the solenoidal coils. A novel W&R solenoidal coil (reaching ~973 ampere-turns) wound on an alumina ceramic tube generates a DC field of ~19 mT at 77 K and has been fabricated together with five pancake-shaped coils, each generating an average of ~5 mT at 77 K. These are destined for magnet construction with a possible combined calculated field of ~0.04 T at 77 K (with liquid nitrogen as a coolant)     

DC isolation and RF dissipation loss of coplanar waveguide on GaAs multi conductive Layers bombarded by H/sup +/ and Fe/sup +/ ions

This letter explores the dc isolation and radio frequency (RF) dissipation loss of coplanar waveguide (CPW) lines of H/sup +/ and Fe/sup +/ ion bombarded GaAs multi conductive epitaxial layers. It is demonstrated that although a sheet resistivity as high as 10/sup 8/ /spl Omega/sq has been achieved by ion bombardment, showing excellent dc isolation, the RF dissipation loss of gold metallized CPW lines on the bombarded multi conductive epitaxial layers are higher than that on a semi-insulating GaAs substrate, especially at higher frequencies (0.5 dB/cm higher at 50 GHz). This is probably caused by deep level trappings due to the ion bombardment.     

Towards a Dual-Tip STM Application in Mesoscopic Electron Transport

A new design for a dual-tip scanning tunneling microscope (STM) is presented. The design is a variation on the mechanically controllable break-junction with two electron beam-induced deposition nano-tips. The new design enables one to scan surfaces simultaneously with two probes having a nano-gap separation. By collecting the lateral current flowing between the tips, the transconductance map can then be compared with the STM images for local characterizations of the electron transport. Since the lateral beam carries the property of the density of states of the surface at momentum space, the dispersion of the electronic structure should give an orientation and position dependence of the local transconductance current. In addition, the reduced terminal separation, on the order of the characteristic mesoscopic length scales, is likely to be sensitive to a variety of typically observed interactions and interference effects.     

Conductor design with high-Tc superconducting Bi(Pb)—2223/Ag multifilamentary tapes

With high upper critical fields, high temperature superconductors (HTSC) have been recognised as candidate materials for coil and magnet applications. High field devices, at one time or another, when operated close to their rated limits are often faced with instability problems which normally are electrical, magnetic or mechanical in nature. The determination of stability parameters, therefore, is of interest to the conductor designer which very much assists in the processing aspect of long length production of wires and tapes. Due to the morphology of the superconductor most HTSC devices made with Bi(Pb)—2223 precursor exist in tape form. Here the determination of stability parameters (for flux-jump and cryogenic stability) for multifilamentary Bi(Pb)—2223/Ag tapes are presented. Processing parameters such as intermediate deformation and filling factors have been found to play a crucial role, not only on the critical current density of the tapes but on the stability aspect in conductor design as well.