Shield-layers for reducing thermoelastic damping in resonating Silicon bars

In this work it is theoretically shown that thermoelastic incompatibility between Silicon structures and their native-oxide layers induces thermoelastic damping. This damping dominates in structures that are packaged in vacuum and vibrate in pure axial motion. Analytic solutions of the thermoelastic response of axially loaded laminated bars are used to determine the material parameters which affect thermoelastic damping. The analysis suggests that thin shield-layers can significantly reduce thermoelastic damping which is associated with native-oxide layers in Silicon resonators.     

On the dynamic pull-in of electrostatic actuators with multiple degrees of freedom and multiple voltage sources

This study considers the dynamic response of electrostatic actuators with multiple degrees of freedom that are driven by multiple voltage sources. The critical values of the applied voltages beyond which the dynamic response becomes unstable are investigated. A methodology for extracting a lower bound for this dynamic pull-in voltage is proposed. This lower bound is based on the stable and unstable static response of the system, and can be rapidly extracted because it does not require time integration of momentum equations. As example problems, the dynamic pull-in of two prevalent electrostatic actuators is analyzed.     

The electromechanical response of multilayered piezoelectric structures

The constitutive equations of multilayered piezoelectric structures are derived in a new form. In this form, the electromechanical coupling is presented as an additional stiffness matrix. This matrix is a true property of the piezoelectric structure and is independent of specific mechanical boundary conditions that may apply to the structure. A novel model of the electromechanical response of such structures is presented. This model accounts for the three-dimensional (3-D) kinematics of the structure deformation. Solution of example problems using the new model shows excellent agreement with full 3-D finite element simulations. These solutions are also compared to the results of previous two-dimensional (2-D) model approximations presented in literature, and the inaccuracies associated with these previous models are discussed.     

Model and Observations of Dielectric Charge in Thermally Oxidized Silicon Resonators

This paper investigates the effects of dielectric charge on resonant frequency in thermally oxidized silicon resonators hermetically encapsulated using “epi-seal.” $ hbox{SiO}_{2}$ coatings are effective for passive temperature compensation of resonators but make the devices more susceptible to charging-related issues. We present a theoretical model for the electromechanical effects of charge trapped in the dielectrics within the transduction gap of a resonator. Observations of resonance frequency against varying resonator bias voltage are fitted to this model in order to obtain estimates for the magnitude of the trapped oxide charge. Statistics collected from wet- and dry-oxidized devices show that lower fixed oxide charge can be expected upon dry oxidation. In addition, observations of time-varying resonator frequency indicate the presence of mobile oxide charge in a series of voltage biasing and temperature experiments. $hfill$[2009-0088]      

A novel method for measuring the strength of microbeams

A novel method and test structure for measuring the strength of brittle microbeams is presented. The method does not require any measurement of forces or displacements. The test structure includes a microbeam that is wrapped over a curved side-wall by application of an unmeasured force. With the progression of wrapping, increasing tensile stresses are induced in the microbeam. When sufficiently high stresses are induced, the beam breaks. The failure stress is deduced by measuring the length of the remaining ligament of the broken beam. The method is demonstrated by measuring the strength of microbeams in bulk-micromachined test structures.     

Analytical approach and numerical /spl alpha/-lines method for pull-in hyper-surface extraction of electrostatic actuators with multiple uncoupled voltage sources

This work presents a systematic analysis of electrostatic actuators driven by multiple uncoupled voltage sources. The use of multiple uncoupled voltage sources has the potential of enriching the electromechanical response of electrostatically actuated deformable elements. This in turn may enable novel MEMS devices with improved and even new capabilities. It is therefore important to develop methods for analyzing this class of actuators. Pull-in is an inherent instability phenomenon that emanates from the nonlinear nature of the electromechanical coupling in electrostatic actuators. The character of pull-in in actuators with multiple uncoupled voltage sources is studied, and new insights regarding pull-in are presented. An analytical method for extracting the pull-in hyper-surface by directly solving the voltage-free K-N pull-in equations derived here, is proposed. Solving simple but interesting example problems illustrate these new insights. In addition, a novel /spl alpha/-lines numerical method for extracting the pull-in hyper-surface of general electrostatic actuators is presented and illustrated. This /spl alpha/-lines method is motivated by new features of pull-in, that are exhibited only in electrostatic actuators with multiple uncoupled voltage sources. This numerical method permits the analysis of electrostatic actuators that could not have been analyzed by using current methods.     

An efficient DIPIE algorithm for CAD of electrostatically actuated MEMS devices

Pull-in parameters are important properties of electrostatic actuators. Efficient and accurate analysis tools that can capture these parameters for different design geometries, are therefore essential. Current simulation tools approach the pull-in state by iteratively adjusting the voltage applied across the actuator electrodes. The convergence rate of this scheme gradually deteriorates as the pull-in state is approached. Moreover, the convergence is inconsistent and requires many mesh and accuracy refinements to assure reliable predictions. As a result, the design procedure of electrostatically actuated MEMS devices can be time-consuming. In this paper a novel Displacement Iteration Pull-In Extraction (DIPIE) scheme is presented. The DIPIE scheme is shown to converge consistently and far more rapidly than the Voltage Iterations (VI) scheme (>100 times faster!). The DIPIE scheme requires separate mechanical and electrostatic field solvers. Therefore, it can be easily implemented in existing MOEMS CAD packages. Moreover, using the DIPIE scheme, the pull-in parameters extraction can be performed in a fully automated mode, and no user input for search bounds is required.