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Managing information technology in the nineties

Business, not technology leaders should manage the change of Information Technology (IT) from a self-contained business support unit of the sixties to a distributed strategic business function of the nineties. Top management should recognize that a good business plan can only be developed and executed through the partnership between the business unit managers and the managers of the financial, the personnel, and the IT resource units. The technical problems associated with the management of IT may again be the easier part of the total management challenge.     

Symbolic parametrization of curves

If algebraic varieties like curves or surfaces are to be manipulated by computers, it is essential to be able to represent these geometric objects in an appropriate way. For some applications an implicit representation by algebraic equations is desirable, whereas for others an explicit or parametric representation is more suitable. Therefore, transformation algorithms from one representation to the other are of utmost importance.We investigate the transformation of an implicit representation of a plane algebraic curve into a parametric representation. Various methods for computing a rational parametrization, if one exists, are described. As a new idea we introduce the concept of working with classes of conjugate (singular or simple) points on curves. All the necessary operations, like determining the multiplicity and the character of the singular points or passing a linear system of curves through these points, can be applied to such classes of conjugate points. Using this idea one can parametrize a curve if one knows only one simple point on it. We do not propose any new method for finding such a simple point. By classical methods a rational point on a rational curve can be computed, if such a point exists. Otherwise, one can express the coordinates of such a point in an algebraic extension of degree 2 over the ground field.     

Low dark current quasi-Schottky barrier MSM-photodiode structures on n-Ga/sub 0.47/In/sub 0.53/As with p/sup +/-Ga/sub 0.47/In/sub 0.53/As cap layer

The p/sup +/-cap layer was used to fabricate a metal-semiconductor-metal (MSM) interdigitated photodetector on Ga/sub 0.47/In/sub 0.53/As. The measured barrier height was Phi /sub Bn=/0.52 V, the ideality factor n=1.1 and average dark current density 2 mA/cm/sup 2/. A rise time of 45 ps at lambda =1.3 mu m under 2 V bias was measured for an MSM photodiode with 3 mu m finger width and finger gaps and an active area of 100*100 mu m/sup 2/.<>