Detection performance of the reduced-rank linear predictor ROCKET

This paper assesses the frequency detection capabilities of a new signal-dependent reduced-rank linear predictor applied to autoregressive spectrum estimation. The new technique is called reduced-order correlation kernel estimation technique (ROCKET). Its detection performance is examined by comparison to a full-rank autoregressive (FR-AR) estimator and two reduced-rank principal component autoregressive (PC-AR) estimators based on both the standard signal-independent version and a modified signal-dependent method. The performance of the new autoregressive estimator is also compared as a function of rank to the popular pseudo-spectrum estimator MUSIC. The performance metrics examined are the probability of detection (P/sub D/) and the false alarm rate (FAR) of detecting the spatial frequencies of plane waves impinging on a uniform line array in additive white Gaussian noise. These metrics are studied as a function of subspace rank, sample support, and signal-to-noise ratio (SNR). Simulations show that the signal-dependent reduced-rank estimators significantly outperform both the signal-independent version of PC-AR and the FR-AR estimator for low sample support and low SNR environments. One notable characteristic of ROCKET that highlights its distinct subspace selection is its performance as a function of subspace rank. It is observed that for equal powered signals, its peak performance is nearly invariant to signal rank and that at almost any subspace rank ROCKET meets or exceeds FR-AR performance. This provides an extra degree of robustness when the signal rank is unknown.     

Optical power equalization for multiwavelength fiber-amplifiercascades using periodic inhomogeneous broadening

Inhomogeneously broadened fiber amplifiers inserted periodically in an amplifier cascade are shown to provide significant interchannel power equalization in wavelength-multiplexed systems. Interchannel power variations in a six-amplifier cascade are reduced from 16 dB in a conventional system to about 5 dB when power equalizers are inserted     

Broadband multiwavelength simultaneous dispersion compensation near 1550 nm through singlemode fibres optimised for 1310 nm

Broadband dispersion compensation is demonstrated at 2.5 and 10 Gbit/s using an optical-fibre equaliser in combination with pulse compression. At 2.5 Gbit/s, simultaneous penalty-free dispersion compensation is achieved in a four-wavelength system operating at 1550 nm through 67 km of 1310 nm-optimised singlemode fibre. Low penalties are obtained over the full 20 nm gain bandwidth of the erbium-doped fibre amplifier, with the receiver sensitivity slightly enhanced at the short-wavelength end.<>     

High-density micromachined polygon optical crossconnects exploitingnetwork connection-symmetry

Optical-layer crossconnects with high port count appear to be emerging as key elements for provisioning and restoration in future wavelength-division-multiplexed networks. We demonstrate here a means of achieving high-density optical crossconnects utilizing free-space micromachined optical switches that exploit connection-symmetry in core-transport networks. The micromachined polygon switches proposed here are strictly nonblocking. Measured insertion losses of 3.1-3.5 dB for a 16×16 (8×8 bidirectional) switch suggest the promise of scaling to large port count     

Nano- and micrometer-scale thin-film-interconnection failure theory and simulation and metallization lifetime prediction,Part 2: Polycrystalline-line degradation and bulk failure

The degradation and bulk failure of a polycrystalline interconnect line caused by vacancy electromigration along grain boundaries and vacancy-cluster nucleation at triple points in the bulk conductor are investigated within the general theory of the electromigration-induced degradation and failure of thin-film on-chip interconnect lines, presented in Part 1 [1]. The general equations are tailored to deal with vacancy electromigration, mechanical-stress generation, and void nucleation at triple points. Appropriate boundaryvalue problems are formulated, and numerical methods and procedures to solve them are developed and implemented in software. Computer simulations are performed to identify a pattern of electromigration failure at triple points. On this basis, (1) interconnect lifetime is investigated over wide ranges of variation of material, structural, geometric, and operating parameters, and (2) the current-density and temperature dependence—of the mechanical stress, vacancy concentration, and level of vacancy supersaturation at a triple point, and of void radius and time to nucleation-is examined and explained. The simulation results are found to agree well with previous experiments. This investigation could be seen as a natural continuation of our study of electromigration failures developed by multilevel-metallization systems as a result of interconnect failure near via junctions or at open ends [1]. Together they cover most mechanisms of electromigration failure suffered by metallization systems.     

SiO<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> layer formation during plasma sputtering of Si and SiO<Subscript>2</Subscript> targets

Deposition of SiO _x layers of variable composition onto silicon wafers was performed by co-sputtering of spaced Si and SiO₂ targets in argon plasma. Coordinate dependences of the thickness and refractive index of separately deposited Si and SiO₂ layers and the SiO _x layer grown during co-sputtering of targets were determined using optical techniques. It was shown that the SiO _x layer composition is not equal to a simple sum of thicknesses of separately deposited Si and SiO₂ layers. The coordinate dependences of the Si and SiO₂ layer thicknesses were calculated. To fit the calculated and experimental data, it is necessary to assume that no less than 10% of silicon is converted to dioxide during co-sputtering. A comparison of the coordinate dependences of the IR absorbance in SiO₂ and SiO _x layers with experimental ellipsometric data confirmed the presence of excess oxygen in the SiO _x layer. Taking into account such partial oxidation of sputtered silicon, composition isolines in the substrate plane were calculated. After annealing of the SiO _x layer at 1200°C, photoluminescence was observed in a wafer area predicted by calculations, which was caused by the formation of quantum-size Si nanocrystallites. The photoluminescence intensity was maximum at x = 1.78 ± 0.3, which is close to the composition optimum for ion-beam synthesis of nanocrystals.     

Drinking patterns as predictors of alcohol withdrawal reactions in DBA/2J mice

Individually housed DBA/2J mice were fed a liquid diet in which ethanol supplied 33% of the calories. The level of physical dependence that developed was estimated by scoring convulsions, elicited by handling the mice, after discontinuing the alcohol diet. The severity of the withdrawal reaction increased progressively with duration (5-12 days) of alcohol administration. A 2-day period on the diet produced no withdrawal reaction. Pretreatment of the mice with alcohol in their drinking water slightly increased the subsequent intake of the liquid diet. "Effective" alcohol intake was defined as uninterrupted alcohol consumption above 10 g/kg/day. Withdrawal scores correlated better with effective intake than with total intake under a variety of conditions. We interpret this to mean that brief interruptions in drinking (1 day) may allow the accrued physical dependence to disappear. On the basis of their effective alcohol intake, mice could be assigned to nondependent, moderately dependent or severely dependent groups for further study of the nature of physical dependence.     

The clinical course of diabetic nephropathy

A retrospective record analysis of 112 juvenile-onset diabetics with nephropathy was conducted in order to determine their clinical course. The mean duration of diabetes at the onset of proteinuria was 17.3+/-6.0 years. Early renal failure appeared two years after the onset of protein-uria, and severe renal failure (mean serum creatinine level, 8.5+/-3.9 mg/100 ml) four years after the onset of proteinuria. The mean duration of life after the onset of severe renal failure was six months. The mortality was 53%, with 59% of the deaths attributable to renal failure and 36% to cardiovascular disease. All patients experienced progressive deterioration of renal function as well as the other complications of diabetes, the rate of progression being accelerated toward the end of the course. Juvenile onset diabetics should be considered for renal transplantation before the serum creatinine level reaches 8.5 mg/100 ml.     

Cognitive functioning under moderate and low dosage methadone maintenance

The Wechsler Adult Intelligence Scale (WAIS) was administered to two groups of patients in the Santa Clara County Methadone Maintenance Program who were receiving low and moderate daily stabilized dosages of methadone hydrochloride. In the two separate statistical analyses performed, there were no significant differences found between subtest scores or verbal, performance, and full-scale scores of the groups measured. These results, combined with observations regarding the similarities of WAIS profiles of the two groups, indicate that cognitive functioning as measured by the WAIS was not differentially affected by the two dosages.