Structural properties and electrical behaviour of thin silicon oxynitride layers

Thin SiO₂ and SiO_xN_y layers were grown on silicon using Rapid Thermal Processing (RTP) in either O₂ or N₂O ambient. Subsequent annealing or nitridation was performed in order to improve the electrical stability. The composition of the films, in particular the incorporation of nitrogen and hydrogen, has been studied. We obtained the distribution of states at the Si/insulator interface through the evaluation of CV measurements and investigated the charge trapping in the layers analysing the voltage–time behaviour during Fowler–Nordheim constant current injection. Furthermore, assuming a trap assisted tunneling mechanism, the influence of near interface trap states on the current voltage characteristic was used to derive an effective insulator state distribution.     

Putting it all together – Formal verification of the VAMP

In the verified architecture microprocessor (VAMP) project we have designed, functionally verified, and synthesized a processor with full DLX instruction set, delayed branch, Tomasulo scheduler, maskable nested precise interrupts, pipelined fully IEEE compatible dual precision floating point unit with variable latency, and separate instruction and data caches. The verification has been carried out in the theorem proving system PVS. The processor has been implemented on a Xilinx FPGA. A shorter version of this article with the title “Instantiating uninterpreted functional units and memory system: functional verification of the VAMP” appeared in [8]. The work reported here was done while all the authors were with Saarland University.     

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Ohne Zusammenfassung     

Patent information in a large electrical company, exemplified by the situation at Siemens

The special situation of patent information is dealt with against the background of the general problems of information provision. The role of the Patent Department of Siemens as a user of patent information and in the distribution of patent information within the company is discussed. Finally, the present system of current patent information on granted patents and first publications is outlined and an outlook on future developments given.     

Uniaxial compression of Swiss-type cheese at different strain rates

Rheological behaviour of 48 Swiss-type cheese samples in lubricated uniaxial compression was evaluated at three initial strain rates ranging from 4·76 × 10⁻³ to 7·62 × 10⁻² s⁻¹. Modulus, apparent fracture stress and apparent fracture strain increased significantly with increasing strain rate, which is attributed to the viscoelastic nature of cheese. The influence of strain rate on apparent fracture strain strongly depended on the shape of the stress-strain curves. The relationship between the rheological parameters evaluated at different strain rates proved to be significant. The strain rate dependency of the apparent fracture strain is further explained by the contribution of elastic and viscous components, which was evaluated in relaxation experiments in the linear viscoelastic region.     

Microcalorimetry for characterization of film formation and cure of coatings and adhesives

A new microcalorimeter with eight parallel channels using robust, low cost sensors for characterization of coatings and adhesives is described and first experiments on coatings and adhesives are presented. The calorimetric sensors are based on thin glass plates (20 mm × 20 mm, thickness 150 μm) with heater and thermocouple sputtered on the surfaces (calorimetric active area of about 9 mm²). The setup allows heating and cooling experiments as well as isothermal measurements in the temperature-modulated mode with up to eight sensors in parallel. The measured quantities are the real (C^′_p) and imaginary part (C^″_p) of the complex heat capacity (), the related absolute value of the heat capacity () and the heat flow . An industrial computer (NI PXI system) with specific software for calibration and data recording controls the electronic components. Sensors can be embedded in a temperature controlled oven (heating and cooling by Peltier elements) or alternatively in a climatic cabinet with controlled temperature and humidity.

The method has been applied successfully to monitoring of film formation of aqueous polymer dispersions (styrene-acrylate copolymer) and curing of coatings.     

Reibungsversuche mit Krypton bei niedrigen Drücken

Tests of a linear Equation on the Evaluation of Krypton Friction Experiments at low Pressures and Connections to Viscosity Effects The coefficient of viskosity is nearly constant in the region with STP conditions and is independent of the pressure. This coefficient decreases with lowering the pressure until the region of molecular flow is reached. There we have free molecular‐ or vacuum viscosity. Experiments with the friction of gas have to take in the gas between surfaces which are movabel and parallel. Reactions of the gas with the moving surface cannot be neglected. We made our lab‐examinations of gas friction effects between two rotating cylinders. Generally there is a linear equation of the reciprocal values of viscosities and pressures. Our experiments show a region, where this linear relation is valid. This region has a low limit with coming to molecular flow and an upper limit if the gas is warmed up by friction at higher pressures.     

Germanium islands embedded in strained silicon quantum wells grown on patterned substrates

Germanium islands were embedded in strained silicon quantum wells in order to provide an improved electron confinement in vicinity of the islands. Growth was performed on relaxed SiGe layers. Patterned substrates were used, favouring lattice relaxation as well permitting the fabrication of small Ge islands at deposition temperatures above 500 °C. Photoluminescence analysis reveals a strongly reduced dislocation related signal. The low temperature spectra are dominated by intense signals from the germanium islands. The origin of these signals were investigated by removing the islands by etching, analysing reference samples without a silicon quantum well, varying the germanium deposition and the growth temperature.