Three‐dimensional color prediction modeling of single‐ and double‐layered woven fabrics

In this research, the three‐dimensional structural and colorimetric modeling of three‐dimensional woven fabrics was conducted for accurate color predictions. One‐hundred forty single‐ and double‐layered woven samples in a wide range of colors were produced. With the consideration of their three‐dimensional structural parameters, three‐dimensional color prediction models, K/S‐, R‐, and L*a*b*‐based models, were developed through the optimization of previous two‐dimensional models which have been reported to be the three most accurate models for single‐layered woven structures. The accuracy of the new three‐dimensional models was evaluated by calculating the color differences ΔL*, ΔC*, Δh°, and ΔE_CMC(2:1) between the measured and the predicted colors of the samples, and then the error values were compared to those of the two‐dimensional models. As a result, there has been an overall improvement in color predictions of all models with a decrease in ΔE_CMC(2:1) from 10.30 to 5.25 units on average after the three‐dimensional modeling.     

Optimization of Selective Epitaxial Growth of Silicon in LPCVD

Selective epitaxial growth (SEG) of silicon has attracted considerable attention for its good electrical properties and advantages in building microstructures in high‐density devices. However, SEG problems, such as an unclear process window, selectivity loss, and nonuniformity have often made application difficult. In our study, we derived processing diagrams for SEG from thermodynamics on gas‐phase reactions so that we could predict the SEG process zone for low pressure chemical vapor deposition. In addition, with the help of both the concept of the effective supersaturation ratio and three kinds of E‐beam patterns, we evaluated and controlled selectivity loss and nonuniformity in SEG, which is affected by the loading effect. To optimize the SEG process, we propose two practical methods: One deals with cleaning the wafer, and the other involves inserting dummy active patterns into the wide insulator to prevent the silicon from nucleating.     

A New Approach for Built‐in Self‐Test of 4.5 to 5.5 GHz Low‐Noise Amplifiers

This paper presents a low‐cost RF parameter estimation technique using a new RF built‐in self‐test (BIST) circuit and efficient DC measurement for 4.5 to 5.5 GHz low noise amplifiers (LNAs). The BIST circuit measures gain, noise figure, input impedance, and input return loss for an LNA. The BIST circuit is designed using 0.18 μm SiGe technology. The test technique utilizes input impedance matching and output DC voltage measurements. The technique is simple and inexpensive.     

Measurement and numerical simulation of three‐dimensional fiber orientation states in injection‐molded short‐fiber‐reinforced plastics

To determine three‐dimensional fiber orientation states in injection‐molded short‐fiber composites, a confocal laser scanning microscope (CLSM) is used. Since the CLSM optically sections the specimen, more than two images of the cross sections on and below the surface of the composite can be obtained. Three‐dimensional fiber orientation states can be determined by using geometric parameters of fiber images obtained from two parallel cross sections. For experiments, carbon‐fiber‐reinforced polystyrene is examined by the CLSM and geometric parameters of fibers on each cross‐sectional plane are measured by an image analysis. In order to describe fiber orientation states compactly, orientation tensors are determined at different positions of the prepared specimen. Three‐dimensional orientation states are obtained without any difficulty by determining the out‐of‐plane angles utilizing fiber images on two parallel planes acquired by the CLSM. Orientation states are different at different positions and show the shell–core structure along the thickness of the specimen. Fiber orientation tensors are predicted by a numerical analysis and the numerically predicted orientation states show good agreement with measured ones. However, some differences are found at the end of cavity. They may result from the fountain flow effects, which are not considered in the numerical analysis. © 2003 Wiley Periodicals, Inc. J Appl Polym Sci 88: 500–509, 2003     

A critical heat flux model based on mass, energy, and momentum balance for upflow boiling at low qualities

A mechanistic modeling of critical heat flux (CHF) in upflow boiling at low qualities is performed. The developed model is based on a physical criterion of CHF occurrence and a mechanism limiting the thermal transport between a stagnant bubbly layer and bulk stream. The mechanism can be mathematically formulated by coupling the equation of limiting mixing mass flux, which is derived from momentum balance equations in two regions, with local mass and energy balance equations on the bubbly layer. The resulting form of the model is represented by a general and straightforward CHF formula involving two empirical constants related to the void fraction and the thickness of the bubbly layer. The predictions agree well with the extensive CHF data of water in uniformly heated tubes.     

Simultaneous degradation of nitroaromatic compounds TNT,RDX, atrazine,and simazine by Pseudomonas putida HK‐6 in bench‐scale bioreactors

BACKGROUND: Environmental contamination by nitroaromatic compounds such as 2,4,6‐trinitrotoluene (TNT), hexahydro‐1,3,5‐trinitro‐1,3,5‐s‐triazine (RDX), atrazine, and/or simazine (TRAS) generated as waste from military and agricultural activities is a serious worldwide problem. Microbiological treatment of these compounds is an attractive method because many explosives and herbicides are biodegradable and the process can be made cost‐effective. We explored the feasibility of using cultures of Pseudomonas putida HK‐6 for simultaneous degradation of TRAS with the aim of microbial application in wastewater treatment in bench‐scale bioreactors. RESULTS: Experiments were conducted to study the effects of supplemental carbons, nitrogens, and Tween‐80 on the degradation of Ps. putida HK‐6 in media containing TRAS as target substrate(s). The most effective TRAS degradation was shown in the presence of molasses. Addition of nitrogen sources produced a delayed effect for the target substrate(s). Tween‐80 enhanced the degradation of target substrate(s). Simultaneous degradation of these compounds proceeded to completion within the given period. CONCLUSIONS: Ps. putida HK‐6 was capable of growth with TRAS, and the effects of supplements on TRAS degradation and simultaneous TRAS degradation were evaluated in bench‐scale bioreactors. The results of this study have practical applications in the processes of industrial waste stream treatment where the disposal of TRAS may be problematic. Copyright © 2008 Society of Chemical Industry     

A 0.25-/spl mu/m CMOS quad-band GSM RF transceiver using an efficient LO frequency plan

This paper describes a single-chip CMOS quad-band (850/900/1800/1900 MHz) RF transceiver for GSM/GPRS applications. It is the most important design issue to maximize resource sharing and reuse in designing the multiband transceivers. In particular, reducing the number of voltage-controlled oscillators (VCOs) required for local oscillator (LO) frequency generation is very important because the VCO and phase-locked loop (PLL) circuits occupy a relatively large area. We propose a quad-band GSM transceiver architecture that employs a direct conversion receiver and an offset PLL transmitter, which requires only one VCO/PLL to generate LO signals by using an efficient LO frequency plan. In the receive path, four separate LNAs are used for each band, and two down-conversion mixers are used, one for the low bands (850/900 MHz) and the other for the high bands (1800/1900 MHz). A receiver baseband circuit is shared for all four bands because all of their channel spaces are the same. In the transmit path, most of the building blocks of the offset PLL, including a TX VCO and IF filters, are integrated. The quad-band GSM transceiver that was implemented in 0.25-/spl mu/m CMOS technology has a size of 3.3/spl times/3.2 mm/sup 2/, including its pad area. From the experimental results, we found that the receiver provides a maximum noise figure of 2.9 dB and a minimum IIP3 of -13.2dBm for the EGSM 900 band. The transmitter shows an rms phase error of 1.4/spl deg/ and meets the GSM spectral mask specification. The prototype chip consumes 56 and 58 mA at 2.8 V in the RX and TX modes, respectively.