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1.
High-purity mullite ceramics, promising engineering ceramics for high-temperature applications, were fabricated using transient liquid phase sintering to improve their high-temperature mechanical properties. Small amounts of ultrafine alumina or silica powders were uniformly mixed with the mullite precursor depending on the silica-alumina ratio of the resulting ceramics to allow for the formation of a transient liquid phase during sintering, thus, enhancing densification at the early stage of sintering and mullite formation by the reaction between additional alumina and the residual glassy phase (mullitization) at the final stage of sintering. The addition of alumina powder to the silica-rich mullite precursor resulted in a reaction between the glassy silica and alumina phases during sintering, thereby forming a mullite phase without inhibiting densification. The addition of fine silica powder to the mullite single-phase precursor led to densification with an abnormal grain growth of mullite, whereas some of the added silica remained as a glassy phase after sintering. The resulting mullite ceramics prepared using different powder compositions showed different sintering behaviors, depending on the amount of alumina added. Upon selecting an optimum process and the amount of alumina to be added, the pure mullite ceramics obtained via transient liquid phase sintering exhibited high density (approximately 99%) and excellent high-temperature flexural strength (approximately 320 MPa) at 1500 °C in air. These results clearly demonstrate that pure mullite ceramics fabricated via transient liquid phase sintering with compositions close to those of stoichiometric mullite could be a promising process for the fabrication of high-temperature structural ceramics used in an ambient atmosphere. The transient liquid phase sintering process proposed in this study could be a powerful processing tool that allows for the preparation of superior high-temperature structural ceramics used in the ambient processing atmosphere. 相似文献
2.
Sugawara F. Aoki K. Yamaguchi H. Sasaki K. Sasaki T. Fujisaki H. 《Electron Device Letters, IEEE》1997,18(10):483-485
A new lateral MOS-gated thyristor, called the Base-Current-Controlled Thyristor, is described. This device is designed so that most holes at the on-stage reach the P base through the floating P+ region adjacent to the P base and the on-state MOSFET. At the turn-off stage, the interruption of the hole current to the P base due to switching off the above MOSFET occurs simultaneously with the conventional turn-off operation. The concept of this device is verified experimentally by using the fabricated lateral device with the external MOSFET. This device exhibits a better trade-off relation between the on-state voltage and the turn-off time compared uith the conventional MOS-gated thyristor 相似文献
3.
Behaviormetrika - In this paper, we propose a new clustering method based on the concept of maximum likelihood (ML) estimation. In general, the problem of local minima arises when we try to use the... 相似文献
4.
5.
Three phase partitioning (TPP) uses t-butanol and ammonium sulfate to precipitate enzymes and proteins from aqueous solutions. The method is useful both upstream with crude samples and downstream where a scaleable simple step is needed. About 25 enzymes and proteins have been isolated by various laboratories using TPP-t-butanol. The relation of t-butanol used in TPP, with n-butanol used as an extraction agent from Morton's work, is reviewed. Some t-butanol appears bound to TPP-precipitated proteins which are actually protein-t-butanol coprecipitates. They float above denser aqueous salts because bound t-butanol increases their buoyancy, similar to the behavior of many lipoproteins. On redissolving TPP-precipitated enzymes, total and specific activities usually are regained and sometimes increased. Sulfate ion-in large concentrations-likely exerts itself through its kosmotropic action as in conventional salting out. t-Butanol likewise appears to be a kosmotrope and crowding agent at room temperature or above, whereas C1 and C2 cosolvents (e.g., ethanol) do not so behave except at near or below zero temperatures. However, kosmotropy is not the entire origin of TPP, nor probably of conventional salting out. Electrostatic forces, capacity to force protein conformation tightening and protein hydration shifts, also contribute. Electrostatic forces, and the tendency for salt ions to bind and tighten protein molecule conformation, are indicated by the sharp pH dependency of both conventional salting out and TPP, around pH regions where proteins undergo conformation changes. Sulfate anion is densely-perhaps extraordinarily-hydrated, adding much to its effective size, and therefore it has a tendency to crowd or exclude proteins, when sulfate concentrations are in the 0.5 to 3 M range. 相似文献
6.
7.
O Nishimatsu J Horiguchi Y Inami T Sukegawa A Sasaki 《Canadian Metallurgical Quarterly》1997,43(5):169-177
We recorded all-night polysomnograms of four schizophrenic patients with neuroleptic-induced akathisia (NIA) before and during treatment with clonazepam. Also, four non-akathitic schizophrenic patients were recorded all-night polysomnograms as control subjects. Daily treatment with 1.5 to 3 mg clonazepam improved subjective complaints of all the 4 patients with NIA. Three of 4 patients with NIA exhibited periodic limb movements (PLM) on bilateral legs, but none of 4 control subjects showed PLM. Total number of PLM and PLM per hour decreased during clonazepam treatment. Moreover, mean inter-movement intervals of PLM of 3 patients were prolonged on bilateral legs. NIA might change its feature as PLM during night sleep. 相似文献
8.
To deal with circulated bills in various conditions regarding size, shape, and rigidity, we have developed a new bill-stacking
cassette that can accept and re-dispense various-sized bills. This cassette stacks the bills upright by using deforming guides
and sheet rollers under our newly developed “phase control”. It was experimentally verified by stacking tests that the cassette
can handle bills in various conditions; thus, we conclude that the new cassette is practical for stacking circulated bills
and re-dispensing them securely.
Received: 14 August 2001/Accepted: 11 December 2001 相似文献
9.
On the basis of new concept using a solid disperse phase we have developed an efficient catalytic solid-phase-system for epoxidations of alkenes using urea–hydrogen peroxide (urea–H2O2) complex and cetylpyridinium dodecatungstate ((CetylPy)10[H2W12O42]) catalyst on fluorapatite (FAp). The recovered solid catalyst phase was reused to keep the catalytic activity after several times. In the conceptual idea it is a key point that in situ solid-phase-activation of the catalyst with urea–H2O2 proceeds to form microcrystals of the active species dispersed on the solid phase. The dispersion of the catalyst on FAp in the case of tungstic acid (H2WO4) was suggested by EPMA analysis. We proposed the peroxo type of species keeping the parent polyoxometalate framework as novel active species from FT-IR spectroscopic studies. FAp phase plays important roles of dispersing the active species on its surface to have high catalytic activity and of stabilizing the active species to lead to high reusability. 相似文献
10.
Hiraki M. Uano K. Minami M. Sato K. Matsuzaki N. Watanabe A. Nishida T. Sasaki K. Seki K. 《Solid-State Circuits, IEEE Journal of》1992,27(11):1568-1574
A BiCMOS logic circuit applicable to sub-2-V digital circuits has been developed. A transiently saturated full-swing BiCMOS (TS-FS-BiCMOS) logic circuit operates twice as fast as CMOS at 1.5-V supply. A newly developed transient-saturation technique, with which bipolar transistors saturate only during switching periods, is the key to sub-2-V operation because a high-speed full-swing operation is achieved to remove the voltage loss due to the base-emitter turn-on voltage. Both small load dependence and small fan-in dependence of gate delay time are attained with this technique. A two-input gate fabricated with 0.3-μm BiCMOS technology verifies the performance advantage of TS-FS-BiCMOS over other BiCMOS circuits and CMOS at sub 2-V supply 相似文献