An organic hydrogel film with micron-sized pillar array for real-time and indicator-free detection of Zn

A hydrogel sensing film for a real-time and indicator-free detection of Zn²⁺ is developed by embedding a fluorescent indicator 11,16-bis(phenyl)-6,6,21,21-tetramethyl-m-benzi-6,21-porphodimethene in a hydrogel host poly(2-hydroxyethyl methacrylate). The sensing film shows high stability and selectivity to Zn²⁺. The sensitivity of the sensing film is increased by fabricating a micron-sized pillar array on the surface of the sensing film to increase the surface area. For Zn²⁺ concentrations of 10⁻⁴ and 10⁻³ M, the response time is 30 and 3 s, respectively.     

Sub-100 nm ALD-assisted nanoimprint lithography for realizing vertical organic transistors with high ON/OFF ratio and high output current

We introduced a conformal atomic-layer-deposited aluminum oxide layer to cover the imprint mold to reduce the feature size and to strengthen the mold durability. A nano-hole array pattern with diameter down to 85 nm was successfully transferred to sample substrate to fabricate a vertical organic transistor. The Imprint vertical organic transistor exhibited high output current density as 4.35 cm²/V s and high ON/OFF current ratio as 11,000 at a low operation voltage as 1.5 V.     

Probing the circumstellar medium of GRB afterglows through absorption-line observations

A systematic search of Wolf-Rayet wind signatures, as represented by blue-shifted, high-velocity (|Deltav|=1000-5000 kms(-1)) C IV lambdalambda 1548, 1550 absorption doublet has yielded an estimate of 20% for the incidence of these C IV absorbers near the host galaxies of gamma-ray bursts (GRBs). This is consistent with what is observed near classical damped Lyalpha absorbers that have a comparable neutral hydrogen column density as the GRB host galaxies. A detailed ionization analysis of these absorbers, including the associated low-ionization species, shows that the majority in fact originate in foreground galaxies along the sightline, rather than in the vicinity of the GRB afterglows. Taking into account the enhanced afterglow radiation field, the lack of Wolf-Rayet signatures can be applied to constrain the C/He ratio and the density contrast of the winds in the vicinity of GRB progenitor stars.     

Soldering of solution-processed organic vertical transistor and light-emitting diode on separate glass substrates by tin micro-balls

The vertical organic space-charge-limited transistor made of P3HT and small-molecule phosphorescent organic light-emitting diode (OLED) are made on two separate glass substrate by blade coating, then soldered vertically together by tin balls with 40 μm diameter. The soldering is done by hot wind of 150 °C for 5 min Contact resistance is only 10 Ω. The vertical transistor is annealed at 150 °C for 5 min before soldering to enhance the output current up to 25 mA/cm² and give high thermal stability. Both OLED and the annealed vertical transistor are not affected by the soldering process. The vertical transistor has 1/4 of the OLED area and turns on the bottom-emission white OLED up to 300 cd/m² and orange OLED up to 600 cd/m². The entire operation is within 8 V. OLED and transistor array can therefore be made on separate glass substrates then soldered together to form the display.     

The Effects of Drain-Bias on the Threshold Voltage Instability in Organic TFTs

In this letter, the influence of drain bias on the threshold voltage instability in pentacene-based organic thin-film transistors (OTFTs) was studied. By applying different drain biases to adjust the channel carrier concentration in linear mode, the threshold voltage shift was found to be proportional to the carrier concentration. The experimental data can be well quantitatively explained by the drain bias-stress theory developed for a-Si TFTs. The outcome gives the insight of the degradation mechanism of OTFTs and is important for the design of OTFT pixel circuit, OTFT analog amplifiers, or OTFT active loads.     

Solder bonding with a buffer layer for MOEMS packaging using induction heating

In this paper, the selective induction heating technology is applied to glass–glass and glass–silicon solder bonding for MOEMS (optical MEMS) packaging. The Ni bumping with a buffer layer is successful to release the thermal stress for avoiding delamination. The Au wetting layer must be thick enough to prevent from being solved entirely into Sn, and it will improve bonding strength. The bonding specimens are soaked into 25°C water and placed into 85°C/85% RH oven, respectively. No moisture penetrates into the cavity after 1 day in both test conditions. In the test condition of 125°C leakage-test liquid (Galden HS260), no bubble is observed. The lowest bonding strength is 3 MPa.     

A study of parasitic resistance effects in thin-channel polycrystalline silicon TFTs with tungsten-clad source/drain

With selectively-deposited tungsten film grown on source/drain regions, the parasitic source/drain resistance of thin-channel polycrystalline silicon (poly-Si) thin film transistors can be greatly reduced, leading to the improvement of device driving ability. After extracting the parasitic resistance from characteristics of devices with different channel length, the influences of parasitic resistance on device performances were discussed. A physically-based equation containing the parasitic resistance effects was derived to explain the behavior of linear transconductance under high gate voltage. Good agreements were found between calculated and measured data for both the thin-channel devices with or without tungsten-clad source/drain structure.     

All-small-molecule efficient white organic light-emitting diodes by multi-layer blade coating

Blue and white small-molecule organic light-emitting diodes are fabricated by multi-layer blade coating on hot plate at 80 °C with hot wind. Uniform multi-layer structures are made without dissolution due to rapid drying. Only small molecules originally developed for vacuum deposition are used. For hole transport layer of, 4′,4″-tris(carbazol-9-yl)triphenylamine (TCTA), electron transport layer of 2,2′,2″-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) (TBPI), emissive layer host of, 6-bis(3-(9H-carbazol-9-yl)phenyl)pyridine (26DCzPPy), triplet emitters of bis(3,5-difluoro-2-(2-pyridyl)phenyl-(2-carboxypyridyl)iridium(III) (FIrpic), and cathode of LiF/Al, the peak current efficiency for blue emission is 25.1 cd/A (10.8% and 9.3 lm/W). Orange emitter iridium(III)bis (4-(4-t-butylphenyl) thieno[3,2-c]pyridinato-N,C2′)acetylacetonate (PO-01-TB) is added to obtain white emission with CIE coordinate of (0.39, 0.46) [1]. The current efficiency is 34.2 cd/A (11.6% and 12 lm/W) at maximum, 32.4 cd/A at 1000 cd/m², and 31 cd/A at 10,000 cd/m².     

Temperature Coefficient of Poly-Silicon TFT and its Application on Voltage Reference Circuit With Temperature Compensation in LTPS Process

The temperature coefficient (TC) of n-type polycrystalline silicon thin-film transistors (poly-Si TFTs) is investigated in this paper. The relationship between the TC and the activation energy is observed and explained. From the experimental results, it is also found that TC is not sensitive to the deviation of the laser crystallization energy. On the contrary, channel width can effectively modulate the TC of TFTs. By using the diode-connected poly-Si TFTs with different channel widths, the first voltage reference circuit with temperature compensation for precise analog circuit design on glass substrate is proposed and realized. From the experimental results in a low-temperature poly-Si process, the output voltage of voltage reference circuit with temperature compensation exhibits a very low TC of 195 ppm/degC , between 25degC and 125degC. The proposed voltage reference circuit with temperature compensation can be applied to design precise analog circuits for system-on-panel or system-on-glass applications, which enables the analog circuits to be integrated in the active-matrix liquid crystal display panels.