This article presents the results of the series of experimental tests of a packaged RF MEMS switch manufactured as a chip on a silicon substrate in the Center for Materials and Microsystems of Fondazione Bruno Kessler. Experiments have been performed up to 25 GHz and included S-parameters check in different operation and environmental conditions, including variation of input power, ambient temperature and number of switching cycles. Presented RF MEMS SPST switch is a basic element of more complex reconfigurable networks such as SPxT switches, phase shifters, power attenuators etc.
相似文献The out-of-plane deformation and the pull-in voltage of electrostatically actuated cantilevers with a residual stress gradient, is investigated in the length range 100–300 µm. Measured pull-in voltages are compared with calculations, which are obtained using previously proposed analytical expressions and a finite element method (FEM) modelling. In particular, a simplified model of the residual stress distribution inside cantilevers is formulated that enables FEM simulation of measured out-of-plane deformations and pull-in voltages for all lengths of fabricated cantilevers. The presented experimental results and FEM model are exploitable in the design of cantilever-based microelectromechanical systems, in order to provide a reliable prediction of the influence of residual stress gradient on device shape and pull-in voltage.
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