Repulsive Flux Pinning Force in NbTi/Nb Superconductor/Superconductor Multilayers

Flux pinning characteristics have been investigated for the Nb _x Ti_100-x /Nb(x = 65, 50 and 28) and Nb ₂₈ Ti ₇₂/Nb ₆₅ Ti ₃₅ superconductor(S)/superconductor(S^′) multilayers. The maximum of the pinning force F _{p⊥ max} perpendicular to the layer plane as a function of the structure modulation length λ has a peak in the quasi-two-dimensional region (λ～20 nm). The maximum. values of the F _{p⊥ max} versus λ curve are proportional to the difference of the GL coherence length (ξ _GL ) between the superconductive sublayers S and S^′. The results suggest that the large F _{p⊥ max} in the S/S^′ multilayer is caused by the repulsive pinning force due to Nb layers with larger ξ _GL .     

Coating of hydroxyapatite on metal plates using thermal dissociation of calcium-EDTA chelate in phosphate solutions under hydrothermal conditions

Coating of hydroxyapatite on various metal plates was carried out by a homogeneous precipitation technique using hydrothermal reactions in Ca(edta)^2-–NaH₂PO₄ at 140–200°C and pH 3.4–10.0. Hydroxyapatite films were formed on the surface of the iron plates in solutions at an initial pH above 4.7, whereas aggregates consisting of needle-like hydroxyapatite crystal radiating from a point in the form of flower deposited as islands on the surface of aluminum, copper and titanium plates. The upper part of the film formed on the surface of the iron plates consisted of needle-like hydroxyapatite particles whereas the bottom of the film consisted of spherical hydroxyapatite particles. The length of the needle-like hydroxyapatite particles increased with decreasing concentration of Ca(edta)^2-.     

Effect of 8 MeV electron irradiation on electrical properties of CuInSe2 thin films

Radiation damages due to 8 MeV electron irradiation in electrical properties of CuInSe₂ thin films have been investigated. The n-type CuInSe₂ films in which the carrier concentration was about 3×10¹⁶ cm⁻³, were epitaxially grown on a GaAs(0 0 1) substrate by RF diode sputtering. No significant change in the electrical properties was observed under the electron fluence <3×10¹⁶ e cm⁻². As the electron fluence exceeded 10¹⁷ e cm⁻², both the carrier concentration and Hall mobility slightly decreased. The carrier removal rate was estimated to be about 0.8 cm⁻¹, which is slightly lower than that of III–V compound materials.     

Current collecting efficiency of micro tubular SOFCs

In this study, current collecting efficiency of the micro tubular solid oxide fuel cell (SOFC) was estimated to determine optimum size of the micro tubular SOFC. Two models for collecting current from single terminal (ST) and double terminal (DT) of anode tube were proposed and used to calculate the current collecting efficiency as functions of anode thickness, tube length and operating temperature. It was shown that design of the cell geometry and current correcting method are significantly important to achieve high performance micro tubular SOFC stacks. The efficiency loss estimated from the DT model was about 2–4-fold lower than those of obtained from the ST model. The DT model was shown to be more effective for higher operating temperature and the tube length.     

Effect of Microstructural Control on Thermoelectric Properties of Hot-Pressed Aluminum-Doped Zinc Oxide

The thermal conductivity of polycrystalline Al-doped ZnO was controlled through the fabrication of nanostructured polycrystalline materials, by hot-pressing nanosized Zn_{1– x} Al _x O ( x = 0.01, 0.02) particles, which were synthesized by a coprecipitation and spray-drying method. This process resulted in an improved thermoelectric power factor because of the nanosized Zn_0.99Al_0.01O particles of the polycrystalline products. The thermal conductivity also was decreased as a result of the formation of nanocrystalline Zn_0.99Al_0.01O.     

Implicit Formulation for SPH‐based Viscous Fluids

We propose a stable and efficient particle‐based method for simulating highly viscous fluids that can generate coiling and buckling phenomena and handle variable viscosity. In contrast to previous methods that use explicit integration, our method uses an implicit formulation to improve the robustness of viscosity integration, therefore enabling use of larger time steps and higher viscosities. We use Smoothed Particle Hydrodynamics to solve the full form of viscosity, constructing a sparse linear system with a symmetric positive definite matrix, while exploiting the variational principle that automatically enforces the boundary condition on free surfaces. We also propose a new method for extracting coefficients of the matrix contributed by second‐ring neighbor particles to efficiently solve the linear system using a conjugate gradient solver. Several examples demonstrate the robustness and efficiency of our implicit formulation over previous methods and illustrate the versatility of our method.     

WO3/BiVO4 composite photoelectrode prepared by improved auto-combustion method for highly efficient water splitting

We report on the improvement in the water splitting efficiency of a WO₃/BiVO₄ composite photoelectrode by the application of an improved auto-combustion method to the preparation of porous BiVO₄ thin films. The unique feature of this preparation method is the addition of both NH₄NO₃, as a strong oxidizing agent, and an organic additive into BiVO₄ precursor solution. The local decomposition heat of the organic additive and oxidizing agent created a porous film with small, highly crystalline BiVO₄ particles. The photoelectrode has many advantages over existing ones, such as the high light-harvesting efficiency (LHE), a single BiVO₄ phase, the facile access of the holes to the photoelectrode/electrolyte interface, and the ease of water and oxygen diffusion. The maximum incident photon-to-current efficiency (IPCE) was estimated to be 64% (at 440 nm, 1.23 V vs. RHE) and the applied bias photon-tocurrent efficiency (ABPE) reached as high as 1.28%. This ABPE value is highest among all oxide semiconductor photoelectrodes reported previously, except for the case of a stacking photoelectrode system.     

Grain Boundary Segregation Behavior of Boron in Low-Alloy Steel

The boron concentration profiles around prior austenite grain boundaries in Fe-0.05C-0.5Mo-0.001B (mass pct) are examined using aberration-corrected STEM-EELS. In order to obtain the precise distribution of boron around the boundaries, tilt series measurements with thin specimens (<30 nm) are performed and the EEL spectra are analyzed by principal component analysis (PCA) and multivariate curve resolution (MCR). The boron concentration profile changes with the cooling rate from the solid solution temperature. The concentration at grain boundaries is maximized at a medium rate (30 °C/s), where the concentration reaches 8 at. pct, and it decreases at a larger (250 °C/s) or smaller (5 °C/s) rate. On the other hand, the boron distribution becomes wider as the cooling rate becomes smaller. The current results suggest that the boron segregation in the alloy is formed by the “non-equilibrium segregation mechanism.”     

Antiferromagnetic Order in the Ladder Compound SrCu2O3; Cu-NMR/NQR Measurements

We carried out the extensive Cu-nuclear magnetic and quadrupole resonance (NMR/NQR) experiments on the Zn(Ni)-doped ladder compound SrCu ₂ O ₃ (Sr123), Sr(Cu _1–x M _x ) ₂ O ₃ (M=Zn and Ni) with x 0.02 and the Ladoped Sr123, Sr _1–x La _x Cu ₂ O ₃ with x 0.03. A spin-correlation length _s /a (a: the lattice spacing between the Cu sites along the leg) of nonmagnetic impurity-induced staggered polarization (IISP) estimated from a quasi-one-dimensional (Q1D) IISP along the two legs in the 0.1–2 % Zn-doped Sr123 was found to be independent of temperature (T) and scaled to an mean impurity distance D _AV with the relation of _s /a = 2.5 + 0.1D _AV The _s /a's are much longer in x = 0.001 ( _s /a 50) and 0.005 ( _s /a 12) than an instantaneous spin-correlation length ₀ /a 3 – 8 in Sr123. The formula of Néel T, T _N (WC-Q1D)=J exp(–D _AV /(_s/a)) (J = 2000 K) based on the weakly interladder-coupled (WC) Q1D model explains the experimental T _N values quantitatively.