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1.
Flux pinning characteristics have been investigated for the Nb x Ti100-x /Nb(x = 65, 50 and 28) and Nb 28 Ti 72/Nb 65 Ti 35 superconductor(S)/superconductor(S′) multilayers. The maximum of the pinning force F p⊥ max perpendicular to the layer plane as a function of the structure modulation length λ has a peak in the quasi-two-dimensional region (λ~20 nm). The maximum. values of the F p⊥ max versus λ curve are proportional to the difference of the GL coherence length (ξ GL ) between the superconductive sublayers S and S′. The results suggest that the large F p⊥ max in the S/S′ multilayer is caused by the repulsive pinning force due to Nb layers with larger ξ GL . 相似文献
2.
Y. Fujishiro T. Sato A. Okuwaki 《Journal of materials science. Materials in medicine》1995,6(3):172-176
Coating of hydroxyapatite on various metal plates was carried out by a homogeneous precipitation technique using hydrothermal reactions in Ca(edta)2-–NaH2PO4 at 140–200°C and pH 3.4–10.0. Hydroxyapatite films were formed on the surface of the iron plates in solutions at an initial pH above 4.7, whereas aggregates consisting of needle-like hydroxyapatite crystal radiating from a point in the form of flower deposited as islands on the surface of aluminum, copper and titanium plates. The upper part of the film formed on the surface of the iron plates consisted of needle-like hydroxyapatite particles whereas the bottom of the film consisted of spherical hydroxyapatite particles. The length of the needle-like hydroxyapatite particles increased with decreasing concentration of Ca(edta)2-. 相似文献
3.
Tooru Tanaka Toshiyuki Yamaguchi Akihiro Wakahara Akira Yoshida Ryoichi Taniguchi Yatsuka Matsuda Masatoshi Fujishiro 《Solar Energy Materials & Solar Cells》2003,75(1-2):115-120
Radiation damages due to 8 MeV electron irradiation in electrical properties of CuInSe2 thin films have been investigated. The n-type CuInSe2 films in which the carrier concentration was about 3×1016 cm−3, were epitaxially grown on a GaAs(0 0 1) substrate by RF diode sputtering. No significant change in the electrical properties was observed under the electron fluence <3×1016 e cm−2. As the electron fluence exceeded 1017 e cm−2, both the carrier concentration and Hall mobility slightly decreased. The carrier removal rate was estimated to be about 0.8 cm−1, which is slightly lower than that of III–V compound materials. 相似文献
4.
In this study, current collecting efficiency of the micro tubular solid oxide fuel cell (SOFC) was estimated to determine optimum size of the micro tubular SOFC. Two models for collecting current from single terminal (ST) and double terminal (DT) of anode tube were proposed and used to calculate the current collecting efficiency as functions of anode thickness, tube length and operating temperature. It was shown that design of the cell geometry and current correcting method are significantly important to achieve high performance micro tubular SOFC stacks. The efficiency loss estimated from the DT model was about 2–4-fold lower than those of obtained from the ST model. The DT model was shown to be more effective for higher operating temperature and the tube length. 相似文献
5.
6.
Yoshinobu Fujishiro Motoyuki Miyata Masanobu Awano Kunihiro Maeda 《Journal of the American Ceramic Society》2003,86(12):2063-2066
The thermal conductivity of polycrystalline Al-doped ZnO was controlled through the fabrication of nanostructured polycrystalline materials, by hot-pressing nanosized Zn1– x Al x O ( x = 0.01, 0.02) particles, which were synthesized by a coprecipitation and spray-drying method. This process resulted in an improved thermoelectric power factor because of the nanosized Zn0.99 Al0.01 O particles of the polycrystalline products. The thermal conductivity also was decreased as a result of the formation of nanocrystalline Zn0.99 Al0.01 O. 相似文献
7.
Tetsuya Takahashi Yoshinori Dobashi Issei Fujishiro Tomoyuki Nishita Ming C. Lin 《Computer Graphics Forum》2015,34(2):493-502
We propose a stable and efficient particle‐based method for simulating highly viscous fluids that can generate coiling and buckling phenomena and handle variable viscosity. In contrast to previous methods that use explicit integration, our method uses an implicit formulation to improve the robustness of viscosity integration, therefore enabling use of larger time steps and higher viscosities. We use Smoothed Particle Hydrodynamics to solve the full form of viscosity, constructing a sparse linear system with a symmetric positive definite matrix, while exploiting the variational principle that automatically enforces the boundary condition on free surfaces. We also propose a new method for extracting coefficients of the matrix contributed by second‐ring neighbor particles to efficiently solve the linear system using a conjugate gradient solver. Several examples demonstrate the robustness and efficiency of our implicit formulation over previous methods and illustrate the versatility of our method. 相似文献
8.
Issei Fujimoto Nini Wang Rie Saito Yugo Miseki Takahiro Gunji Kazuhiro Sayama 《International Journal of Hydrogen Energy》2014
We report on the improvement in the water splitting efficiency of a WO3/BiVO4 composite photoelectrode by the application of an improved auto-combustion method to the preparation of porous BiVO4 thin films. The unique feature of this preparation method is the addition of both NH4NO3, as a strong oxidizing agent, and an organic additive into BiVO4 precursor solution. The local decomposition heat of the organic additive and oxidizing agent created a porous film with small, highly crystalline BiVO4 particles. The photoelectrode has many advantages over existing ones, such as the high light-harvesting efficiency (LHE), a single BiVO4 phase, the facile access of the holes to the photoelectrode/electrolyte interface, and the ease of water and oxygen diffusion. The maximum incident photon-to-current efficiency (IPCE) was estimated to be 64% (at 440 nm, 1.23 V vs. RHE) and the applied bias photon-tocurrent efficiency (ABPE) reached as high as 1.28%. This ABPE value is highest among all oxide semiconductor photoelectrodes reported previously, except for the case of a stacking photoelectrode system. 相似文献
9.
Genichi Shigesato Taishi Fujishiro Takuya Hara 《Metallurgical and Materials Transactions A》2014,45(4):1876-1882
The boron concentration profiles around prior austenite grain boundaries in Fe-0.05C-0.5Mo-0.001B (mass pct) are examined using aberration-corrected STEM-EELS. In order to obtain the precise distribution of boron around the boundaries, tilt series measurements with thin specimens (<30 nm) are performed and the EEL spectra are analyzed by principal component analysis (PCA) and multivariate curve resolution (MCR). The boron concentration profile changes with the cooling rate from the solid solution temperature. The concentration at grain boundaries is maximized at a medium rate (30 °C/s), where the concentration reaches 8 at. pct, and it decreases at a larger (250 °C/s) or smaller (5 °C/s) rate. On the other hand, the boron distribution becomes wider as the cooling rate becomes smaller. The current results suggest that the boron segregation in the alloy is formed by the “non-equilibrium segregation mechanism.” 相似文献
10.
S. Ohsugi Y. Kitaoka M. Azuma Y. Fujishiro M. Takano 《Journal of Low Temperature Physics》1999,117(5-6):1671-1675
We carried out the extensive Cu-nuclear magnetic and quadrupole resonance (NMR/NQR) experiments on the Zn(Ni)-doped ladder compound SrCu
2
O
3
(Sr123), Sr(Cu
1–x
M
x
)
2
O
3
(M=Zn and Ni) with x 0.02 and the Ladoped Sr123, Sr
1–x
La
x
Cu
2
O
3
with x 0.03. A spin-correlation length
s
/a (a: the lattice spacing between the Cu sites along the leg) of nonmagnetic impurity-induced staggered polarization (IISP) estimated from a quasi-one-dimensional (Q1D) IISP along the two legs in the 0.1–2 % Zn-doped Sr123 was found to be independent of temperature (T) and scaled to an mean impurity distance D
AV
with the relation of
s
/a = 2.5 + 0.1D
AV
The
s
/a's are much longer in x = 0.001 (
s
/a 50) and 0.005 (
s
/a 12) than an instantaneous spin-correlation length
0
/a 3 – 8 in Sr123. The formula of Néel T, T
N
(WC-Q1D)=J exp(–D
AV
/(s/a)) (J = 2000 K) based on the weakly interladder-coupled (WC) Q1D model explains the experimental T
N
values quantitatively. 相似文献