Direct Injection of CRISPR/Cas9-Related mRNA into Cytoplasm of Parthenogenetically Activated Porcine Oocytes Causes Frequent Mosaicism for Indel Mutations

Some reports demonstrated successful genome editing in pigs by one-step zygote microinjection of mRNA of CRISPR/Cas9-related components. Given the relatively long gestation periods and the high cost of housing, the establishment of a single blastocyst-based assay for rapid optimization of the above system is required. As a proof-of-concept, we attempted to disrupt a gene (GGTA1) encoding the α-1,3-galactosyltransferase that synthesizes the α-Gal epitope using parthenogenetically activated porcine oocytes. The lack of α-Gal epitope expression can be monitored by staining with fluorescently labeled isolectin BS-I-B₄ (IB4), which binds specifically to the α-Gal epitope. When oocytes were injected with guide RNA specific to GGTA1 together with enhanced green fluorescent protein (EGFP) and human Cas9 mRNAs, 65% (24/37) of the developing blastocysts exhibited green fluorescence, although almost all (96%, 23/24) showed a mosaic fluorescent pattern. Staining with IB4 revealed that the green fluorescent area often had a reduced binding activity to IB4. Of the 16 samples tested, six (five fluorescent and one non-fluorescent blastocysts) had indel mutations, suggesting a correlation between EGFP expression and mutation induction. Furthermore, it is suggested that zygote microinjection of mRNAs might lead to the production of piglets with cells harboring various mutation types.     

Electrochemically induced asymmetrical etching in InAlAs/InGaAs heterostructures for MODFET gate-groove fabrication

We have achieved a self-controlled asymmetrical etching in metalorganic chemical vapor deposition-grown InAlAs/InGaAs heterostructures, which can be suitable for fabricating modulation-doped field-effect transistors (MODFETs) with gate-groove profiles for improved performance. The technology is based on electrochemical etching phenomena, which can be effectively controlled by using different surface metals for ohmic electrodes. When surface metals of Pt and Ni are deposited on the source and the drain, respectively, the higher electrode potential of Pt results in slower etching on the source side than on the drain side. Thus, asymmetry of gate grooves can be formed by wet-chemical etching with citric-acid-based etchant. This represents a new possibility to conduct “recess engineering” for InAlAs/InGaAs MODFETs.     

Bias-stress-induced increase in parasitic resistance of InP-based InAlAs/InGaAs HEMTs

The reliability of InP-based HEMTs is studied, focussing on how it is affected by the doped layer material and gate recess structure. Bias-and-temperature stress tests reveal that fluorine-induced donor passivation in the recess region, formed adjacent to the gate electrode, causes the source resistance (R_s) to increase at large drain bias voltages. The increase in R_s can be prevented by using InP or InAlP as the carrier supply layer material instead of InAlAs. On the other hand, the increase in the drain resistance (R_d) does not depend on the material of the carrier supply layer, which suggests that a mechanism different from that in the case of R_s should be considered. It is also found that a deep gate recess suppresses the increase in R_d after long-term stressing.     

Nonlinear control for rotational movement of cart-pendulum system using homoclinic orbit

In this paper, we deal with the control method for rotational movements of a pendulum using a separatrix. We design a controller that attains a homoclinic motion or a heteroclinic motion of the pendulum and the asymptotic stability of the cart by using a kind of forwarding control design. First, we derive a controller that converges to a homoclinic orbit via a Lyapunov function of the pendulum subsystem. Next, we give a nonlinear stabilizing controller via another Lyapunov function of the cart subsystem. Moreover, using the third Lyapunov function and adding a complementary control input, we guarantee that the pendulum converges to the homoclinic orbit and the cart is stabilized. Finally, the simulation and the experiment using the rapid controller prototyping system based on MATLAB/Simulink are performed to demonstrate the forward upward circling and the giant swing of the pendulum.     

Implicit Formulation for SPH‐based Viscous Fluids

We propose a stable and efficient particle‐based method for simulating highly viscous fluids that can generate coiling and buckling phenomena and handle variable viscosity. In contrast to previous methods that use explicit integration, our method uses an implicit formulation to improve the robustness of viscosity integration, therefore enabling use of larger time steps and higher viscosities. We use Smoothed Particle Hydrodynamics to solve the full form of viscosity, constructing a sparse linear system with a symmetric positive definite matrix, while exploiting the variational principle that automatically enforces the boundary condition on free surfaces. We also propose a new method for extracting coefficients of the matrix contributed by second‐ring neighbor particles to efficiently solve the linear system using a conjugate gradient solver. Several examples demonstrate the robustness and efficiency of our implicit formulation over previous methods and illustrate the versatility of our method.     

WO3/BiVO4 composite photoelectrode prepared by improved auto-combustion method for highly efficient water splitting

We report on the improvement in the water splitting efficiency of a WO₃/BiVO₄ composite photoelectrode by the application of an improved auto-combustion method to the preparation of porous BiVO₄ thin films. The unique feature of this preparation method is the addition of both NH₄NO₃, as a strong oxidizing agent, and an organic additive into BiVO₄ precursor solution. The local decomposition heat of the organic additive and oxidizing agent created a porous film with small, highly crystalline BiVO₄ particles. The photoelectrode has many advantages over existing ones, such as the high light-harvesting efficiency (LHE), a single BiVO₄ phase, the facile access of the holes to the photoelectrode/electrolyte interface, and the ease of water and oxygen diffusion. The maximum incident photon-to-current efficiency (IPCE) was estimated to be 64% (at 440 nm, 1.23 V vs. RHE) and the applied bias photon-tocurrent efficiency (ABPE) reached as high as 1.28%. This ABPE value is highest among all oxide semiconductor photoelectrodes reported previously, except for the case of a stacking photoelectrode system.     

Adaptive backstepping control of wheeled inverted pendulum with velocity estimator

In this paper, we introduce a backstepping control design of a wheeled inverted pendulum. Based on a second-order motion equation of the body angle, an adaptive integral backstepping controller is designed to stabilize the body angle. It is shown that the σ-modification rule in the adaptive update law guarantees the boundedness of the errors in estimating the time-varying signal that is an output of a linear system with every bounded input signal. Then, the stabilizing controller for the wheel angle is constructed by a PD-type positive feedback. The derived controller requires the full-state measurements. In the output feedback case, the K filter or the observer backstepping is needed. However, the structure of the controller becomes complicated. We propose a non-model-based differentiator based on the adaptive update law. Since the non-model-based differentiator does not require any knowledge of the dynamic structure of the signal, we can use it as a velocity estimator for unknown nonlinear systems. Therefore, we replaced the velocity measurement with the estimates by the non-model-based differentiator. Finally, simulation results for the proposed controller are presented.     

SAW Filters Composed of Interdigital Schottky and Ohmic Contacts on AlGaN/GaN Heterostructures

We proposed surface acoustic wave (SAW) filters composed of interdigital Schottky and ohmic contacts on AlGaN/GaN heterostructures. The contribution of the SAWs appeared in the radio frequency characteristics of the filters when the Schottky contacts were reverse biased. Onsets of the SAW signals and the threshold voltage of simultaneously fabricated high-electron mobility transistors were found to almost agree with one another. We also obtained an isolation of >40 dB. These results suggest that SAW-based functional devices are likely to be realized using AlGaN/GaN heterostructures with interdigital Schottky and ohmic contacts     

Synthesis and Thermal Characterization of Novel Poly(tetramethylsilanthrylenesiloxane) and Poly(tetramethylsilphenanthrylenesiloxane) Derivatives

Summary Novel poly(tetramethylsilarylenesiloxane) derivatives, i.e. poly(tetramethyl-2,6-silanthrylenesiloxane) (P1), poly(tetramethyl-9,10-silanthrylenesiloxane) (P2), and poly(tetramethyl-1,8-silphenanthrylenesiloxane) (P3), were synthesized by polycondensation of novel disilanol monomers, i.e. 2,6-bis(dimethylhydroxysilyl)-anthracene (M1), 9,10-bis(dimethylhydroxysilyl)anthracene (M2), and 1,8-bis(dimethylhydroxysilyl)phenanthrene (M3), respectively. P1 and P3 were soluble in common organic solvents, such as benzene, toluene, chloroform, dichloromethane, tetrahydrofuran, etc. whereas P2 was almost insoluble in common organic solvents. It was revealed that P1 and P3 were amorphous and that P2 exhibited the crystallinity, as deduced from differential scanning calorimetry (DSC) and X-ray diffraction measurements. The glass transition temperatures (T_g’s) of P1 (118 °C) and P3 (100 °C) were much higher than that of poly(tetramethyl-1,4-silphenylenesiloxane). The temperature at 5% weight loss (T_d5) of P3 was 500 °C, which was higher than those of P1 and P2, and comparable to that of poly(tetramethyl-1,4-silphenylenesiloxane). It would be speculated that the thermostability of the series of poly(tetramethyl-silarylenesiloxane) derivatives is dependent on the stability of arylene moieties incorporated.     

In-situ measurement of microwave absorption properties at 2.45 GHz for the polycondensation of lactic acid

For the construction of a microwave-assisted organic synthesis plant, it is necessary to know the dielectric properties of the reaction system. Measurements of the dielectric properties of lactic acid aqueous solution, anhydrated lactic acid, oligo(lactic acid) and water, which are constituent materials in the polycondensation of lactic acid, confirm that dielectric properties decrease as reaction progresses. Calculated microwave penetration depths, obtained from the dielectric properties, show that microwaves penetrate deeply into the reaction system. This work should be useful for the development of microwave-assisted organic syntheses in the chemical industry.