UAV path planning method for avoiding restricted areas

Intelligent Service Robotics - Recently, the industry of drone systems has come into the spotlight because a new potential market has been revealed. A considerable number of drones are deployed...     

Fault-Tolerant UAV Data Acquisition Schemes

Wireless Personal Communications - Through the use of UAV, the functional lifetime of WSN can be elongated in exchange for higher data delivery latency as the UAV replaces the multi-hop...     

High-performance cell transistor design using metallic shieldembedded shallow trench isolation (MSE-STI) for Gbit generation DRAM's

In this paper, the cell transistor design issues for the Gbit level DRAM's with the isolation pitch of less than 0.2 μm caused by the inverse-narrow-channel effect (INCE) and the neighboring storage-node E-field penetration effect (NSPE) will be discussed. Then we propose novel DRAM cell transistor structure by employing metallic shield inside the shallow trench isolation (STI). As confirmed by three-dimensional (3-D) device simulation results, by suppressing the inverse narrow-channel effect and the neighboring storage-node E-field penetration effect using metallic shield inside STI, we can obtain reliable cell transistors with low-doped substrate, low junction leakage current and uniform V_TH a distribution regardless of the active width variation     

Investigation of the kinetics of intergranular corrosion in iron

Corrosion experiments on iron were performed in boiling 55% Ca(NO₃)₂ solution (115°C) to elucidate the kinetics of intergranular corrosion (IGC) of iron. After the time-current curve was recorded for the specimen exposed for 30 h to the IGC test solution at 1000 mV_SHE (passive region), the specimen was examined for IGC by optical microscopy. The current-time curves and optical micrographic observations suggested that the kinetics of IGC of iron is based upon the periodic passivation-grain boundary dissolution process. IGC occurs mainly between the first passivation and the second repassivation periods. Average current density during this period can be regarded as a measure of the susceptibility to IGC. The excess dissolved nitrogen or nitride at the grain boundaries does not lead to a definite IGC.     

An analytical back gate bias dependent threshold voltage model forSiGe-channel ultrathin SOI PMOS devices

An analytical threshold voltage model for SiGe-channel ultrathin SOI PMOS devices is presented. As confirmed by the PISCES simulation results, the analytical model provides a good prediction on the threshold voltage. According to the analytical-formula, depending on the back gate bias, the SiGe-channel SOI PMOS device may have a conduction channel at the top or the bottom of the SiGe channel or at the top of the field oxide     

A 32-bank 1 Gb self-strobing synchronous DRAM with 1 GByte/sbandwidth

This paper describes a 32-bank 1 Gb DRAM achieving 1 Gbyte/s (500 Mb/s/DQ pin) data bandwidth and the access time from RAS of 31 ns at V _cc=2.0 V and 25°C. The chip employs (1) a merged multibank architecture to minimize die area; (2) an extended small swing read operation and a single I/O line driving write scheme to reduce power consumption; (3) a self-strobing I/O schemes to achieve high bandwidth with low power dissipation; and (4) a block redundancy scheme with increased flexibility. The nonstitched chip with an area of 652 mm ² has been fabricated using 0.16 μm four-poly, four-metal CMOS process technology     

High Reliable In-Network Data Verification in Wireless Sensor Networks

In order to provide efficient and suitable services for users in a ubiquitous computing environment, many kinds of context information technologies have been researched. Wireless sensor networks are among the most popular technologies providing such information. Therefore, it is very important to guarantee the reliability of sensor data gathered from wireless sensor networks. However, there are several factors associated with faulty sensor readings which make sensor readings unreliable. In this paper, we classify faulty sensor readings into sensor faults and measurement errors, then propose a novel in-network data verification algorithm which includes adaptive fault checking, measurement error elimination and data refinement. The proposed algorithm eliminates faulty readings as well as refines normal sensor readings, to increase reliability. Also, to achieve scalability of sensor networks and minimize network overhead, the proposed scheme involves a distributed implementation in a local area. The simulation study shows that the in-network data verification algorithm is highly reliable and its network overhead is very low compared to previous works. Reliability and overhead is improved by a maximum of 10–30% and 70%, respectively.     

Elimination of parasitic bipolar-induced breakdown effects in ultra-thin SOI MOSFETs using narrow-bandgap-source (NBS) structure

In this paper, we introduce the Si-SiGe narrow bandgap-source (NBS) SOI device structure in order to improve the low drain-to-source breakdown voltage (V/sub BD/) in ultra-thin SOI devices. Reducing the potential barrier of valence band between source and body by applying the SiGe layer at the source region, we can improve the drain-to-source breakdown voltage by suppressing the hole accumulation in the body. As confirmed by 2D simulation results, NBS-SOI devices provide excellent performance compared to conventional SOI devices.<>     

Characterization of Hazardous Gases Using an Infrared Hyperspectral Imaging System

A rapid algorithm for passive remote sensing of gases with an infrared hyperspectral imaging system is reported that includes approximate and precise measurements. In the former, the spectral region of interest for the analytes is identified. In the latter, fitting calculations in the selected range and for spectral similarity measurements are employed to remove erroneous pixels from the approximate measurement to better characterize the gas sample. The results verify that the algorithm reduced the time for qualitative and quantitative determination of gases compared with conventional approaches.