Holographic polymer‐dispersed liquid crystal fabrication under electric field

The transmission mode of holographic polymer‐dispersed liquid crystals (HPDLCs) was developed an under electric field. It is reported that orientation of LC molecules under an electric field induces orientation of oligomer molecules giving rise to low off‐state diffraction and small grating shrinkage. Copyright © 2005 Society of Chemical Industry     

Slow eroding biodegradable multiblock poloxamer copolymers

Biodegradable multiblock poloxamers (BMPs) with gel duration of 8 h to several weeks were prepared by varying their molecular weights from 4000 to 40 000 g mol^?1. The molecular weight of the BMP was controlled by changing the poloxamer to coupling agent ratio. Assuming a micelle packing model of the BMP gel, as in the case of a poloxamer gel, the micelle properties and critical gel concentration of BMPs were investigated on the basis of the scaling concept. The findings suggest that the control of molecular weight by hydrolyzable groups can be a facile approach to optimize the gel properties for biomedical applications. Copyright © 2005 Society of Chemical Industry     

深化改革 加强服务 促进中国橡胶工业科学发展——中国橡胶工业协会第六届理事会工作报告

2004年6月至2008年6月，第六届理事会任期届满。这四年，橡胶行业确立了以实施科学发展、名牌战略和循环经济为基本指导方针；这四年，协会不断改革，加强建设，强化了服务宗旨；这四年，自主创新成为橡胶工业可持续发展的主旋律。     

Expressive Facial Gestures From Motion Capture Data

Human facial gestures often exhibit such natural stochastic variations as how often the eyes blink, how often the eyebrows and the nose twitch, and how the head moves while speaking. The stochastic movements of facial features are key ingredients for generating convincing facial expressions. Although such small variations have been simulated using noise functions in many graphics applications, modulating noise functions to match natural variations induced from the affective states and the personality of characters is difficult and not intuitive. We present a technique for generating subtle expressive facial gestures (facial expressions and head motion) semi‐automatically from motion capture data. Our approach is based on Markov random fields that are simulated in two levels. In the lower level, the coordinated movements of facial features are captured, parameterized, and transferred to synthetic faces using basis shapes. The upper level represents independent stochastic behavior of facial features. The experimental results show that our system generates expressive facial gestures synchronized with input speech.     

Nonuniformity of phase structure in immiscible polymer blends

This article is focused on the phase structure development in immiscible polymer blends during melt mixing. Nonuniformity of the phase structure, i.e., the coexistence of areas containing particles with markedly different size distribution, was detected in quenched and compression molded samples of a number of various blends prepared by long and intensive mixing in the chamber of a Plasticorder. The same effect was found also for polystyrene/polyamide blends prepared in a twin‐screw extruder. It was shown that neglecting nonuniformity of the phase structure can lead to considerable error in evaluation of the effect of system parameters on the blend morphology. The reasons for the effect were discussed and it was found that inhomogeneous flow field in mixers is a plausible explanation of the nonuniform phase structure. POLYM. ENG. SCI., 2008. © 2008 Society of Plastics Engineers     

油砂地层中子-伽玛能谱Monte-Carlo模拟

本工作应用自行研制开发的中子 伽玛能谱测井的中子 伽玛射线随空间、能量、时间分布的蒙特卡罗模拟软件包计算了裸眼井、井眼里无下井仪器、油饱和砂岩地层、井眼注油条件下沿井轴和井壁的中子 伽玛射线随能量、时间分布及沿井轴和沿井壁的中子 伽玛射线能谱 ,研究了源距对中子 伽玛射线随能量、时间分布以及井轴与井壁中子 伽玛射线能谱的影响。     

N-Type Field-Effect Transistors Using Multiple Mg-Doped ZnO Nanorods

Nanorod field-effect transistors (FETs) that use multiple Mg-doped ZnO nanorods and a SiO₂ gate insulator were fabricated and characterized. The use of multiple nanorods provides higher on-currents without significant degradation in threshold voltage shift and subthreshold slopes. It has been observed that the on-currents of the multiple ZnO nanorod FETs increase approximately linearly with the number of nanorods, with on-currents of ~1 muA per nanorod and little change in off-current (~4times10^-12). The subthreshold slopes and on-off ratios typically improve as the number of nanorods within the device channel is increased, reflecting good uniformity of properties from nanorod to nanorod. It is expected that Mg dopants contribute to high n-type semiconductor characteristics during ZnO nanorod growth. For comparison, nonintentionally doped ZnO nanorod FETs are fabricated, and show low conductivity to compare with Mg-doped ZnO nanorods. In addition, temperature-dependent current-voltage characteristics of single ZnO nanorod FETs indicate that the activation energy of the drain current is very low (0.05-0.16 eV) at gate voltages both above and below threshold