Comparative investigation of InP/InGaAs heterostructure-emitter tunneling and superlattice bipolar transistors

In this article, the characteristics of InP/InGaAs heterostructure-emitter bipolar transistors with 30 n-InP layer tunneling layers and a five-period InP/InGaAs superlattice are demonstrated and comparatively investigated by experimentally results and analysis. In the three devices, a 200 Å n-In_0.53Ga_0.47As layer together with an n-InP tunneling emitter layer (or n-InP/n-InGaAs superlattice) forms heterostructure emitter to decrease collector-emitter offset voltage. The results exhibits that the largest collector current and current gain are obtained for the tunneling transistor with a 30 Å n-InP tunneling emitter layer. On the other hand, some of holes injecting from base to emitter will be blocked at n-InP/n-InGaAs heterojunction due to the relatively small hole transmission coefficient in superlattice device, which will result in a considerable base recombination current in the n-InGaAs layer. Therefore, the collector current and current gain of the superlattice device are the smallest values among of the devices.     

Microporous Carbon and Carbon/Metal Composite Materials Derived from Bio-Benzoxazine-Linked Precursor for CO2 Capture and Energy Storage Applications

There is currently a pursuit of synthetic approaches for designing porous carbon materials with selective CO₂ capture and/or excellent energy storage performance that significantly impacts the environment and the sustainable development of circular economy. In this study we prepared a new bio-based benzoxazine (AP-BZ) in high yield through Mannich condensation of apigenin, a naturally occurring phenol, with 4-bromoaniline and paraformaldehyde. We then prepared a PA-BZ porous organic polymer (POP) through Sonogashira coupling of AP-BZ with 1,3,6,8-tetraethynylpyrene (P-T) in the presence of Pd(PPh₃)₄. In situ Fourier transform infrared spectroscopy and differential scanning calorimetry revealed details of the thermal polymerization of the oxazine rings in the AP-BZ monomer and in the PA-BZ POP. Next, we prepared a microporous carbon/metal composite (PCMC) in three steps: Sonogashira coupling of AP-BZ with P-T in the presence of a zeolitic imidazolate framework (ZIF-67) as a directing hard template, affording a PA-BZ POP/ZIF-67 composite; etching in acetic acid; and pyrolysis of the resulting PA-BZ POP/metal composite at 500 °C. Powder X-ray diffraction, thermogravimetric analysis, scanning electron microscopy, transmission electron microscopy, and Brunauer–Emmett–Teller (BET) measurements revealed the properties of the as-prepared PCMC. The PCMC material exhibited outstanding thermal stability (T_d10 = 660 °C and char yield = 75 wt%), a high BET surface area (1110 m² g^–1), high CO₂ adsorption (5.40 mmol g^–1 at 273 K), excellent capacitance (735 F g^–1), and a capacitance retention of up to 95% after 2000 galvanostatic charge–discharge (GCD) cycles; these characteristics were excellent when compared with those of the corresponding microporous carbon (MPC) prepared through pyrolysis of the PA-BZ POP precursors with a ZIF-67 template at 500 °C.     

InP/GaAsSb type-II DHBTs with GaAsSb/lnGaAs superlattice-base and GaAsSb bulk-base structures

High-performance InP/GaAsSb double heteroj unction bipolar transistor (DHBT) employing GaAsSb/lnGaAs superlattice-base structure is demonstrated and compared with GaAsSb bulk-base structure by two-dimensional simulation analysis. The proposed device exhibits a higher current gain of 257 than the conventional InP/GaAsSb type-II DHBT with a lower current gain of 180, attributed to the tynneling behavior of minority carriers in the GaAsSb/lnGaAs superlattice-base region under large forward base—emitter bias. In addition, a larger unity gain cutoff frequency of 19.1 GHz is botained for the superlattice-base device than that of 17.2 GHz for the bulk-base device.     

A novel InGaP/GaAs S-shaped negative-differential-resistance (NDR)switch for multiple-valued logic applications

In this paper, a novel InGaP/GaAs multiple S-shaped negative-differential-resistance (NDR) switch based on a heterostructure-emitter bipolar transistor (HEBT) structure is fabricated and demonstrated. An interesting multiple NDR phenomenon resulting from an avalanche multiplication and successive two-stage barrier lowering process is observed under the inverted operation mode. The three-terminal-controlled and temperature-dependent NDR characteristics are also investigated. In addition, a typical transistor performance is found under the normal operation mode. Consequently, owing to the presented different stable operation points and transistor action, the studied device shows a good potential for multiple-valued logic and analog amplification circuit applications     

扩频系统中PN码平方律捕获检测性能的闭合形式统计分析

对于任何一种扩频PN码捕获系统来说,捕获性能在很大程度上取决于检测概率P_D和虚警概率P_(fao)在常用的平方律PN码捕获检测器中,P_D和P_(fa)的准确值可由相关器输出信号的概率密度函数(pdf)来估计.这篇文章提出用一种抽样数据方法来导出pdf.结果发现,对于码同步时,pdf是非中心X平方(Chi-square)分布,然而,对于码非同步时,pdf是中心X平方分布.利用这些分布,用广义的Q函数导出了P_D和P_(fa)的闭合表达式.这些结果对研究扩展频谱的工程师在系统设计中调整各种临界参数是非常有用的.     

Characterizations of aluminum-promoted sulfated zirconia on mesoporous MCM-41 silica: Butane isomerization

Sulfated zirconia (SZ) was supported on mesoporous molecular sieves MCM-41 by impregnation of zirconium sulfate followed by calcination. The nanochannels of MCM-41 provide a large surface area for the solid state dispersion of zirconium sulfate and a steric restriction on formation of zirconia nanoparticles. The catalysts were tested in n-butane isomerization. With the addition of a proper amount of alumina as a promoter, denoted as ASZ/MCM-41, the catalytic activity was dramatically improved in comparison to the activities of SZ/MCM-41. The increase of activity was determined primarily by the amount of aluminum added and the temperature of calcination. The SZ/MCM-41 catalysts were characterized by X-ray diffraction (XRD), high resolution TEM (HR-TEM), NH₃ adsorption (NH₃-TPD), X-ray photoelectron spectroscopy (XPS) and X-ray absorption (EXAFS). In particular, the Zr K-edge EXAFS data give one a measure of the degree of dispersion of zirconia on the surface of MCM-41. The trend of the promotion effects of alumina on SZ in butane isomerization is not monotonic; there is an optimum level of Al-loading for high activity. It is explained based on three quantitative factors: increased sulfur loadings, balanced distribution of Lewis and Brønsted acid sites, and higher dispersion of zirconia.     

Tribological interaction between multi-walled carbon nanotubes and silica surface using lateral force microscopy

This work presents the tribological interaction between multi-walled carbon nanotubes (MWCNTs) and silica surface using lateral manipulation in the atomic force microscope (AFM). The MWCNT is mechanically manipulated by a pyramidal silicon probe of an AFM using the same scan mechanism as in the imaging mode. With a controlled normal force of the AFM probe, it was found that lateral force applied to the MWCNT could overcome the tribological adhesion between MWCNT and silica surface, causing individual MWCNT to rotate on the silica. According to the results, the shear stresses due to tribological interacting with the MWCNTs and the silica are 59.6 MPa and 64.8 MPa for the MWCNT 1 (100 nm diameter) and the MWCNT 2 (60 nm diameter), respectively. Experimental results show that the shear stress increases with the increasing rotation angle for each manipulation, from which we determine the linear fitting function. In addition, we determine the relationship between push point and pivot point to realize the rotation behavior. The implications of tribological interaction between the MWCNTs and silica surface are discussed in detail.     

Hydrogen induced redox mechanism in amorphous carbon resistive random access memory

We investigated the bipolar resistive switching characteristics of the resistive random access memory (RRAM) device with amorphous carbon layer. Applying a forming voltage, the amorphous carbon layer was carbonized to form a conjugation double bond conductive filament. We proposed a hydrogen redox model to clarify the resistive switch mechanism of high/low resistance states (HRS/LRS) in carbon RRAM. The electrical conduction mechanism of LRS is attributed to conductive sp² carbon filament with conjugation double bonds by dehydrogenation, while the electrical conduction of HRS resulted from the formation of insulating sp³-type carbon filament through hydrogenation process.     

High-performance InGaP/GaAs pnp δ-doped heterojunction bipolar transistor

In this article, a novel InGaP/GaAs pnp δ-doped heterojunction bipolar transistor is first demonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relatively large, the addition of a δ-doped sheet between two spacer layers at the emitter-base (E-B) junction effectively eliminates the potential spike and increases the confined barrier for electrons, simultaneously. Experimentally, a high current gain of 25 and a relatively low E-B offset voltage of 60 mV are achieved. The offset voltage is much smaller than the conventional InGaP/GaAs pnp HBT. The proposed device could be used for linear amplifiers and low-power complementary integrated circuit applications. The article is published in the original.     

Investigation of InP/InGaAs superlattice-emitter bipolar transistor with multiple negative-differential-resistance regions

The sequential tunneling behavior in InP/InGaAs superlattice-emitter bipolar transistors is demonstrated by theoretical analysis and experimental results. The tunneling mechanism in the InP/InGaAs superlattice structures is analyzed by theoretical calculation. Due to the weak coupled tunneling mechanism, the interesting multiple negative-differential-resistances (NDRs) resulting from the creation and extension of high-field domain in the superlattice are observed at room temperature. Experimentally, the transistor performances, including a high current gain of 454, a low collector–emitter offset voltage of 80 mV, and a pronounced multiple NDRs, are achieved. The proposed structures may provide good potential for signal amplifiers and multiple-valued logic circuit applications.