Theoretical estimation of dielectric loss of oxide glasses using nonequilibrium molecular dynamics simulations

To theoretically explore amorphous materials with a sufficiently low dielectric loss, which are essential for next-generation communication devices, the applicability of a nonequilibrium molecular dynamics simulation employing an external alternating electric field was examined using alkaline silicate glass models. In this method, the dielectric loss is directly evaluated as the phase shift of the dipole moment from the applied electric field. This method enabled us to evaluate the dielectric loss in a wide frequency range from 1 GHz to 10 THz. It was observed that the dielectric loss reaches its maximum at a few THz. The simulation method was found to qualitatively reproduce the effects of alkaline content and alkaline type on the dielectric loss. Furthermore, it reasonably reproduced the effect of mixed alkalines on the dielectric loss, which was observed in our experiments on sodium and/or potassium silicate glasses. Alkaline mixing was thus found to reduce the dielectric loss.     

Synthesis and luminescence of Sr2CeO4 fine particles

Fine particles of a blue emission phosphor Sr₂CeO₄ have been synthesized using a chemical co-precipitation technique, and the textual and luminescent properties were compared with the one synthesized by the conventional solid-state reaction method. Particle size and distribution of the Sr₂CeO₄ fine powder prepared by the co-precipitation process were smaller and narrower than those obtained by the samples prepared from the conventional one. The emission intensity of the fine particles was equal to that of the larger particles prepared from the solid-state reaction, on the contrary to the general tendency that emission intensity decrease with particle size reduction. Although no Ce³⁺ peaks were observed in EPR measurements, X-ray photoelectron spectra of the samples clearly elucidated the existence of Ce³⁺ only on the surface of Sr₂CeO₄.     

Direct observation of the crystal-growth transition in undercooled silicon

Using an electromagnetic levitation facility with a laser heating unit, silicon droplets were highly undercooled in the containerless state. The crystal morphologies on the surface of the undercooled droplets during the solidification process and after solidification were recorded live by using a high-speed camera and were observed by scanning electron microscopy. The growth behavior of silicon was found to vary not only with the nucleation undercooling, but also with the time after nucleation. In the earlier stage of solidification, the silicon grew in lateral, intermediary, and continuous modes at low, medium, and high undercoolings, respectively. In the later stage of solidification, the growth of highly undercooled silicon can transform to the lateral mode from the nonlateral one. The transition time of the sample with 320 K of undercooling was about 535 ms after recalescence, which was much later than the time where recalescence was completed.     

Containerless solidification of highly undercooled mullite melts: Crystal growth behavior and microstructure formation

A mullite (3Al₂O₃·2SiO₂) sample has been levitated and undercooled in an aero-acoustic levitator, so as to investigate the solidification behavior in a containerless condition. Crystal-growth velocities are measured as a function of melt undercoolings, which increase slowly with melt undercoolings up to 380 K and then increase quickly when undercoolings exceed 400 K. In order to elucidate the crystal growth and solidification behavior, the relationship of melt viscosities as a function of melt undercoolings is established on the basis of the fact that molten mullite melts are fragile, from which the atomic diffusivity is calculated via the Einstein-Stokes equation. The interface kinetics is analyzed when considering atomic diffusivities. The crystal-growth velocity vs melt undercooling is calculated based on the classical rate theory. Interestingly, two different microstructures are observed; one exhibits a straight, faceted rod without any branching with melt undercoolings up to 400 K, and the other is a feathery faceted dendrite when undercoolings exceed 400 K. The formation of these morphologies is discussed, taking into account the contributions of constitutional and kinetic undercoolings at different bulk undercoolings.     

Dye-sensitized solar cell based on nanocrystalline TiO<Subscript>2</Subscript> with 3–10 nm in diameter

Nanocrystalline TiO₂ with 3–10 nm in diameter was prepared with a surfactant-template method. Dye-sensitized solar cells were assembled using the prepared nanocrystalline TiO₂ with large surface area and high crystallinity, which achieved significant higher Jsc when compared to cells fabricated with bigger particles of 25 nm in diameter. In the cells with nanocrystalline TiO₂, the sintering temperature drastically affected the conversion performance of the cells.     

Hardware system of the Earth Simulator

The Earth Simulator (ES), developed under the Japanese government’s initiative “Earth Simulator project”, is a highly parallel vector supercomputer system. In this paper, an overview of ES, its architectural features, hardware technology and the result of performance evaluation are described.

In May 2002, the ES was acknowledged to be the most powerful computer in the world: 35.86 teraflop/s for the LINPACK HPC benchmark and 26.58 teraflop/s for an atmospheric general circulation code (AFES). Such a remarkable performance may be attributed to the following three architectural features; vector processor, shared-memory and high-bandwidth non-blocking interconnection crossbar network.

The ES consists of 640 processor nodes (PN) and an interconnection network (IN), which are housed in 320 PN cabinets and 65 IN cabinets. The ES is installed in a specially designed building, 65 m long, 50 m wide and 17 m high. In order to accomplish this advanced system, many kinds of hardware technologies have been developed, such as a high-density and high-frequency LSI, a high-frequency signal transmission, a high-density packaging, and a high-efficiency cooling and power supply system with low noise so as to reduce whole volume of the ES and total power consumption.

For highly parallel processing, a special synchronization means connecting all nodes, Global Barrier Counter (GBC), has been introduced.     

Src homology 2 protein tyrosine phosphatase (SHPTP2)/Src homology 2 phosphatase 2 (SHP2) tyrosine phosphatase is a positive regulator of the interleukin 5 receptor signal transduction pathways leading to the prolongation of eosinophil survival

Interleukin-5 (IL-5) regulates the growth and function of eosinophils. It induces rapid tyrosine phosphorylation of Lyn and Jak2 tyrosine kinases. The role of tyrosine phosphatases in IL-5 signal transduction has not been investigated. In this study, we provide first evidence that SH2 protein tyrosine phosphatase 2 (SHPTP2) phosphotyrosine phosphatase plays a key role in prevention of eosinophil death by IL-5. We found that IL-5 produced a rapid activation and tyrosine phosphorylation of SHPTP2 within 1 min. The tyrosine phosphorylated SHPTP2 was complexed with the adapter protein Grb2 in IL-5-stimulated eosinophils. Furthermore, SHPTP2 appeared to physically associate with beta common (betac) chain of the IL-5 receptor (IL-5betacR). The association of SHPTP2 with IL-5betacR was reconstituted using a synthetic phosphotyrosine-containing peptide, betac 605-624, encompassing tyrosine (Y)612. The binding to the phosphotyrosine-containing peptide increased the phosphatase activity of SHPTP2, whereas the same peptide with the phosphorylated Y612--> F mutation did not activate SHPTP2. Only SHPTP2 antisense oligonucleotides, but not sense SHPTP2, could inhibit tyrosine phosphorylation of microtubule-associated protein kinase, and reverse the eosinophil survival advantage provided by IL-5. Therefore, we conclude that the physical association of SHPTP2 with the phosphorylated betac receptor and Grb2 and its early activation are required for the coupling of the receptor to the Ras signaling pathway and for prevention of eosinophil death by IL-5.     

Expression studies of delta-globin gene alleles associated with reduced hemoglobin A2 levels in Greek Cypriots

We previously identified five delta-globin gene alleles associated with reduced hemoglobin (Hb) A2 (Trifillis, P., Ioannou, P., Schwartz, E., and Surrey, S. (1991) Blood 78, 3298-3305). We have now evaluated functional consequences of the changes after expression in COS-1 cells to monitor effects on RNA splicing. In addition, variant Hb A2 tetramers were expressed in yeast to assess effects of amino acid changes on oxygen binding and stability to heat and mechanical agitation. The G --> T change at codon 27 and the A --> G change in IVS-2 both affect RNA splicing, whereas the C --> T change at codon 97 and the AT deletion in IVS-2 have no effect. Oxygen equilibrium curves of the Hb A2 variants expressed in yeast were similar to that of wild type Hb A2. None of the three variant Hb A2 tetramers (Thr --> Ile at codon 4 (Hb deltaT4I), Ala --> Ser at codon 27 (Hb deltaA27S), and Arg --> Cys at codon 116 (Hb deltaR116C)) showed decreased heat stability compared with Hb A2, whereas the Hb deltaT4I variant showed highest instability to mechanical agitation. Co-expression in yeast of alpha-globin chain and the delta-chain variant containing a Leu --> Pro change at codon 141 yielded no identifiable tetramers, suggesting lack of assembly or severe tetramer instability. These studies show the probable cause for decreased Hb A2 for two alleles is due to defective splicing, whereas decreased protein stability, increased tetramer association with red cell membranes, increased interdisulfide bond formation of delta-chains, which inhibits assembly with alpha-chains, and/or reduced assembly is suggested for the other three alleles.     

Tunable laser for sensing atmospheric transmission in the infrared region of 11 ∼ 16 µm

We succeeded in observing the continuously tunable, pulsed InSb SFR (Spin-Flip Raman) laser emission in the infrared region of 11～16µm (11.4～16.3µm) from only one InSb device, merely by adjusting the pumping wavelength (11 lines from the infrared NH₃ laser) and the applied magnetic field (0～80 kGauss).