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1.
Tsuneaki Matsudaira Masashi Wada Naoki Kawashima Miyuki Takeuchi Daisaku Yokoe Takeharu Kato Masasuke Takata Satoshi Kitaoka 《Journal of the European Ceramic Society》2021,41(5):3150-3160
Mass transfer in polycrystalline Yb2SiO5 wafers with precise composition control was evaluated and analyzed by oxygen permeation experiments at high temperatures using an oxygen tracer. Oxygen permeation proceeded due to mutual grain boundary diffusion of oxide ions and Yb ions without synergistic effects such as acceleration or suppression. The oxygen shielding properties of Yb2SiO5 were compared with those of the other line compounds such as Yb2Si2O7 and Al2O3 based on the determined mass transfer parameters. It was found that the more preferentially an oxide ion diffuses in the grain boundary compared to the interior of the grain, the greater the effect of suppressing the movement of the oxide ion by applying an oxygen potential gradient becomes. 相似文献
2.
H. Sakata A. Katagiri M. Yokoi T. Kato H. Morimoto 《Journal of Low Temperature Physics》2003,131(3-4):275-279
We have measured the tunneling spectra in Bi2Sr2CaCu2O8 with a scanning tunneling microscope(STM) at various tip-sample distances by changing the tunneling conductance in a controlled manner. When the tunneling conductance is increased from 1×10–9 to 1×10–5 S, the spectra do not show changes in particular. However, the gap value decreases steeply and the asymmetric back ground density of states turns inverted V-shaped one above 6×10–4 S. The changes in the tunneling spectra at the high tunneling conductances are explained by the enhancement of the local carrier density induced by the pressure that the STM tip applied to the sample. 相似文献
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Ichiro Hirosawa Tetsuo Honma Kazuo Kato Naoto Kijima Yasuo Shimomura 《Journal of the Society for Information Display》2004,12(3):269-273
Abstract— We studied the influence of annealing in air on doped europium in BaMgAl10O17 by performing x‐ray absorption fine‐structure measurements. We determined the oxidation of doped divalent europium by annealing in air at over 500°C. The interatomic distance between the europium and the surrounding oxygen atoms was compressed by oxidation. It also appears that the oxidation process of europium is determined by the diffusion of oxygen into BaMgAl10O17. 相似文献
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Koji Yamada Kiyotaka Tomari Umaru Semo Ishiaku Hiroyuki Hamada 《Polymer Engineering and Science》2005,45(8):1059-1066
Fracture toughness of adjacent flow weld lines, defined as weld lines that occur when two flow fronts meet and continue to flow together in the same direction (meld line or hot weld line), was evaluated by the single‐edge notched‐bend (SENB) method using three differently‐shaped obstructive pins. Although the fracture toughness varied depending upon the shapes of the pin, the values could be standardized as the distance from the meeting point of the two flow fronts flowing around the pin. The fracture toughness decreased drastically from the meeting point along the weld line and then slightly increased. These characteristic features could be explained by flow‐induced molecular orientation at the weld line interface. The molecules around the meeting point that were initially oriented parallel to the weld line due to fountain flow were able to relax, and then entanglement across the weld line interface developed because the flow stopped in the middle of the filling process, resulting in high fracture toughness. In contrast, the material at the downstream side of the weld line continued flowing during the filling process, being stretched along the flow direction. So, the molecular orientation at this area could not relax. In addition, the V‐notch shape, i.e., the depth and length at the surface of the weld line, which also varied depending on the shape of the obstacles, was considered to be identical when the meeting point was allowed to be a datum point. Thus, the meeting point was found to be a significant factor when the properties of weld lines are investigated. POLYM. ENG. SCI., 45:1059–1066, 2005. © 2005 Society of Plastics Engineers 相似文献
8.
Yamaoka M. Shinozaki Y. Maeda N. Shimazaki Y. Kato K. Shimada S. Yanagisawa K. Osada K. 《Solid-State Circuits, IEEE Journal of》2005,40(1):186-194
An on-chip 1-Mb SRAM suitable for embedding in the application processor used in mobile cellular phones was developed. This SRAM supports three operating modes - high-speed active mode, low-leakage low-speed active mode, and standby mode - and uses a subdivisional power-line control (SPC) scheme. The combination of three operating modes and the SPC scheme realizes low-power operation under actual usage conditions. It operates at 300 MHz, with leakage of 25 /spl mu/A/Mb in standby mode, and 50 /spl mu/A/Mb at the low-leakage active mode. This SRAM also uses a self-bias write scheme that decreases of minimum operating voltage by about 100 mV. 相似文献
9.
Toshiharu Makino Hiromitsu Kato Sung-Gi Ri Yigang Chen Hideyo Okushi 《Diamond and Related Materials》2005,14(11-12):1995
Electrical properties of homoepitaxial diamond p–n+ junction of boron (B)-doped p-type layer and phosphorus-doped n-type layer on Ib (111) diamond single crystal have been characterized. Current–voltage characteristics show a clear rectifying property with rectification ratio of over 105 at ± 10 V. From capacitance–voltage characteristics, it is found that a spatial distribution of space-charge density Ni of the p–n+ junction is not uniform and Ni at a middle region of the space-charge layer formed at zero bias voltage is higher than that of other region of the space-charge layer. This peculiar characteristic can be explained by superposition of two effects; one is the deep dopant effect due to B atoms in the p-type layer, which makes to reduce Ni at around the edge of the space-charge layer formed at zero bias voltage. The other is the compensation of B acceptors by impurity atoms diffusing during the p–n+ interface and incorporating during the growth of p-type layer, which makes to reduce Ni at the vicinity of the p–n+ interface. 相似文献
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