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排序方式: 共有1306条查询结果,搜索用时 15 毫秒
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K Takeda K Saito K Makino Y Saito S Aoki T Koji K Matsumura Y Nomura T Kitano T Nakagawa 《Canadian Metallurgical Quarterly》1997,38(4):559-563
Due to the changes in the frequency of penicillin-resistant strains of S. pneumoniae, it is necessary to perform surveillance studies of bacterial resistance. Isolates from the upper respiratory tract of asymptomatic children have been useful. There is no information about the difference between isolates from children with and without upper respiratory tract infection (URTI). The objective of the authors in this paper is to establish the prevalence of carrier-state, serotype and antimicrobial resistance of S. pneumoniae isolates from children with and without acute upper respiratory tract infection (URTI) in a rural area in Mexico. A cross-sectional comparative study was performed in Tlaxcala, Mexico. Children from one month 5 years of age were included. Nasopharyngeal swabs were obtained. Identification was done by international microbiology standards. Serotyping was done by the capsular Quellung test. The susceptibility testing was performed by the agar dilution method. Four-hundred and fifty patients were included. S. pneumoniae was isolated in 134 children (29.7%). Frequency of carriers was greater in patients with URTI (107/323) than without URTI (27/127) (33.1% vs. 21.1% p = 0.012, OR 1.84, IC 95% 1.1-3.08). The six most frequent serotypes were: 6B (16.4%); 19F (11.9%); 19A (6.7%); 14, 23F, and 35 (5.2% each), with no difference among the groups. Only 3% of the strains had high level resistance to penicillin, and 12.6% had intermediate resistance, and for ampicillin 4%, amoxicillin 4%, amoxicillin-clavulanate 4%, ceftriaxone 3%, cefotaxime 1.5%, erythromycin 6%, miocamycin 3%, chloramphenicol 4%, and vancomycin 0%. Trimethoprim-sulfamethoxazole resistance was very high (42%). In conclusion, colonization is higher in children with URTI. Five of the most frequent serotypes identified in this study were the same as those identified in patients with S. pneumoniae invasive diseases in Mexico City. In Tlaxcala, Mexico, beta-lactams could be the drug of choice for the treatment of S. pneumoniae lower respiratory tract infections. It is necessary to perform clinical assays to evaluate the efficacy of trimethoprim-sulfamethoxazole due to the high resistance in vitro. 相似文献
3.
High-resolution positive and negative photoresists were used to fabricate ?/4-phase-shifted corrugations by holographic exposure. To avoid mixing these photoresists, cyclised polyisoprene was used as a midlayer. The shape and depth of the corrugations on the positive and negative photoresist regions were almost the same. Single-mode operation at the Bragg wavelength was confirmed in lasers with the corrugation. 相似文献
4.
A cryogenic power cable is expected to be capable of carrying bulk power as a main transmission line in a future metropolitan electric power system. It is important to establish a strategy of how to sustain power supply when such a highly densified power supply route trips from the network due to contingency. It is proposed here that the bulk power transmitted by the cryogenic cable could be distributed into the parallel conventional transmission lines by suitable circuit breaker operations in the system. In this process, power-flow routes are forced to be changed with a remarkable modification in the system configuration. In this paper, the power swings associated with the large power-flow change following contingent faults are analyzed by means of a transient network analyzer. It is found that the proposed system modification could be realized without any harmful power swing if the parameters in generators as well as in control devices have conventional magnitudes. It is shown also by simulations that the margin to occurrence in an unstable power swing is left sufficient even if the parameters deviate somewhat from the present magnitudes. 相似文献
5.
A. Matsumura J. M. Fernndez T. J. Thornton S. N. Holmes J. Zhang B. A. Joyce 《Solid-state electronics》1996,40(1-8):399-403
We have characterized two-dimensional electron gases (2DEGs) in Si/SiGe modulation doped structures grown by gas source molecular beam epitaxy. Hall bar structures were fabricated to characterize the structures and magnetotransport measurements were carried out at temperatures down to 0.4 K. Pronounced Shubnikov-de Haas oscillations were observed in the longitudinal magnetoresistance, indicative of high quality 2DEG in the channel. Electron mobilities up to 87,000 cm2 V−1 s−1 with sheet densities about 7 × 1011 cm−2 were obtained at low temperature. Dingle plots of the magnetoresistance vs reciprocal magnetic field were utilized to determine the single-particle relaxation times in order to investigate scattering mechanisms in these structure. The ratio of the transport scattering time derived from electron mobility to the single-particle relaxation time is of the order of 10, indicating that remote impurity scattering is a dominant factor limiting the mobility of our structures. The behaviour of the magnetotransport data is discussed using a model for parallel conduction. 相似文献
6.
Domestic wastewater is a significant source of nitrogen and phosphorus, which cause lake eutrophication. Among the wastewater treatment technologies, constructed wetlands are a promising low-cost means of treating point and diffuse sources of domestic wastewater in rural areas. However, the sustainable operation of constructed wetland treatment systems depends upon a high rate conversion of organic and nitrogenous loading into their metabolic gaseous end products, such as N2O and CH4. In this study, we examined and compared the performance of three typical types of constructed wetlands: Free Water Surface (FWS), Subsurface Flow (SF) and Vertical Flow (VF) wetlands. Pollutant removal efficiency and N2O and CH4 emissions were assessed as measures of performance. We found that the pollutant removal rates and gas emissions measured in the wetlands exhibited clear seasonal changes, and these changes were closely associated with plant growth. VF wetlands exhibited stable removal of organic pollutants and NH3-N throughout the experiment regardless of season and showed great potential for CH4 adsorption. SF wetlands showed preferable T-N removal performance and a lower risk of greenhouse gas emissions than FWS wetlands. Soil oxidation reduction potential (ORP) analysis revealed that water flow structure and plant growth influenced constructed wetland oxygen transfer, and these variations resulted in seasonal changes of ORP distribution inside wetlands that were accompanied by fluctuations in pollutant removal and greenhouse gas emissions. 相似文献
7.
Wakabayashi H. Ueki M. Narihiro M. Fukai T. Ikezawa N. Matsuda T. Yoshida K. Takeuchi K. Ochiai Y. Mogami T. Kunio T. 《Electron Devices, IEEE Transactions on》2002,49(1):89-95
Sub-50-nm CMOS devices are investigated using steep halo and shallow source/drain extensions. By using a high-ramp-rate spike annealing (HRR-SA) process and high-dose halo, 45-nm CMOS devices are fabricated with drive currents of 650 and 300 μA/μm for an off current of less than 10 nA/μm at 1.2 V with Toxinv =2.5 nm. For an off current less than 300 nA/μm, 33-nm pMOSFETs have a high drive current of 400 uA/μm. Short-channel effect and reverse short-channel effect are suppressed simultaneously by using the HRR-SA process to activate a source/drain extension (SDE) after forming a deep source/drain (S/D). This process sequence is defined as a reverse-order S/D (R-S/D) formation. By using this formation, 24-nm nMOSFETs are achieved with a high drive current of 800 μA/μm for an off current of less than 300 μA/μm at 1.2 V. This high drive current might be a result of a steep halo structure reducing the spreading resistance of source/drain extensions 相似文献
8.
Kenji Asai Teruhiro Hatanaka Masaharu Tsubota Kunio Yonezu Koji Ando 《Journal of power sources》1985,16(1):65-73
In order to estimate the discharge performance of tall lead/acid cells (with tubular positives), changes in current and potential distributions with discharge progress were calculated with a computer on the basis of plate resistance and the current—potential—time relationship between small facing parts of positive and negative plates. The taller the cell, the larger the voltage drop along the plates. Thus, the discharge time became shorter despite a large amount of available active mass remaining in the bottom part of the plates.Various current-collector designs were evaluated, e.g., one with varying resistance at each height; a side conductor placed along the plates and connected to them at the top, centre and bottom, etc. Results revealed an optimum collector design with which the maximum discharge capacity could be obtained. Furthermore, it was shown that the side conductor markedly improved the discharge performance because the active mass near the connecting parts was appreciably used. 相似文献
9.
N Sugimoto T Ohmichi A Tanaka A Matsumura M Sasaki 《Canadian Metallurgical Quarterly》1993,(29):167-168
Most stable secondary structures and their stabilization energies of the TAR RNA with +1 to +104 nucleotide-sequence region were calculated at different temperatures by using thermodynamic parameters for RNA structure prediction. The most stable secondary structure has one bulge and one loop within the region of +20 to +40 nucleotide sequence, and its stabilization energy at 37 degrees C was -46.3 kcal mol-1. The interaction of a TAR bulge oligomer (TARBO) with arginine (Arg) which was in the binding site of a Tat protein was also investigated by CD measurements. The addition of Arg did not affect the CD spectrum of TARBO. The result was different from that of the RNA oligomer with both bulge and loop. 相似文献
10.
Rui Morimoto Chisato Yokomori Akiko Kikkawa Akira Izumi Hideki Matsumura 《Thin solid films》2003,430(1-2):230-235
In this paper, bulk-Si metal–oxide–semiconductor field effect transistors (MOSFETs) are fabricated using the catalytic chemical vapor deposition (Cat-CVD) method as an alternative technology to the conventional high-temperature thermal chemical vapor deposition. Particularly, formation of low-resistivity phosphorus (P)-doped poly-Si films is attempted by using Cat-CVD-deposited amorphous silicon (a-Si) films and successive rapid thermal annealing (RTA) of them. Even after RTA processes, neither peeling nor bubbling are observed, since hydrogen contents in Cat-CVD a-Si films can be as low as 1.1%. Both the crystallization and low resistivity of 0.004 Ω·cm are realized by RTA at 1000 °C for only 5 s. It is also revealed that Cat-CVD SiNx films prepared at 250 °C show excellent oxidation resistance, when the thickness of films is larger than approximately 10 nm for wet O2 oxidation at 1100 °C. It is found that the thickness required to stop oxygen penetration is equivalent to that for thermal CVD SiNx prepared at 750 °C. Finally, complementary MOSFETs (CMOSs) of single-crystalline Si were fabricated by using Cat-CVD poly-Si for gate electrodes and SiNx films for masks of local oxidation of silicon (LOCOS). At 3.3 V operation, less than 1.0 pA μm−1 of OFF leakage current and ON/OFF ratio of 107–108 are realized, i.e. the devices can operate similarly to conventional thermal CVD process. 相似文献