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Chapellier Paul Lavenus Pierre Le Traon Olivier Dulmet Bernard 《Microsystem Technologies》2022,28(6):1485-1496
Microsystem Technologies - This paper presents recent advances on two dimensional length-extension mode (2D-LEM) quartz resonators providing high quality (Q) factor on resonances at a few MHz. The... 相似文献
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G Jacopin L Rigutti S Bellei P Lavenus FH Julien AV Davydov D Tsvetkov KA Bertness NA Sanford JB Schlager M Tchernycheva 《Nanotechnology》2012,23(32):325701
The optical polarization properties of GaN/AlGaN core/shell nanowire (NW) heterostructures have been investigated using polarization resolved micro-photoluminescence (μ-PL) and interpreted in terms of a strain-dependent 6 × 6 k·p theoretical model. The NW heterostructures were fabricated in two steps: the Si-doped n-type c-axis GaN NW cores were grown by molecular beam epitaxy (MBE) and then epitaxially overgrown using halide vapor phase epitaxy (HVPE) to form Mg-doped AlGaN shells. The emission of the uncoated strain-free GaN NW core is found to be polarized perpendicular to the c-axis, while the GaN core compressively strained by the AlGaN shell exhibits a polarization parallel to the NW c-axis. The luminescence of the AlGaN shell is weakly polarized perpendicular to the c-axis due to the tensile axial strain in the shell. 相似文献
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Tchernycheva M Rigutti L Jacopin G de Luna Bugallo A Lavenus P Julien FH Timofeeva M Bouravleuv AD Cirlin GE Dhaka V Lipsanen H Largeau L 《Nanotechnology》2012,23(26):265402
We report on the growth and electro-optical studies of photovoltaic properties of GaAsP nanowires. Low density GaAsP nanowires were grown by Au assisted MOVPE on Si(001) substrates using a two step procedure to form a radial p-n junction. The STEM analyses show that the nanowires have cubic structure with the alloy composition GaAs?.??P?.?? in the nanowire core and GaAs?.??P?.?? in the shell. The nanowire ensembles were processed in the form of sub-millimeter size mesas. The photovoltaic properties were characterized by optical beam induced current (OBIC) and electronic beam induced current (EBIC) maps. Both OBIC and EBIC maps show that the photovoltage is generated by the nanowires; however, a strong signal variation from wire to wire is observed. Only one out of six connected nanowires produce a measurable signal. These strong fluctuations can be tentatively explained by the variation of the resistance of the nanowire-to-substrate connection, which is highly sensitive to the quality of the Si-GaAsP interface. This study demonstrates the importance of the spatially resolved charge collection microscopy techniques for the diagnosis of failures in nanowire photovoltaic devices. 相似文献
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