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1.
Advanced sol–gel methods using a secondary solvent addition into (Pb, La)(Zr, Ti)O3 (PLZT) sol–gel solution and a methanol pre-treatment of sapphire substrates are demonstrated. For the secondary solvent addition, the additive affected the crystallinity and electro-optic (EO) property of PLZT films and only methanol addition can improve them. In addition, the methanol pre-treatment is also appeared to be effective to improve film characteristics.

Through these optimizations, epitaxially grown PLZT thin films on r-cut sapphire are obtained and a high Pockels coefficient which is comparable to those of bulk PLZTs is achieved. It is believed that these PLZT thin films are applicable for integrated EO devices and open the door for the future data communication systems.  相似文献   

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3.
We investigated rutile-type titanium dioxide (TiO2) films for possible use as a high-k gate insulator. The TiO2 thin films were directly deposited on Si substrates using a RF magnetron sputtering method with a sintered oxide target. A single phase of rutile-type TiO2 whose dielectric constant of approximately 75 was obtained when the film was deposited in an inert gas atmosphere and annealed at 800 °C in an oxidizing gas atmosphere. The oxygen ions were deficient in the as-deposited film, and consequently, a sufficient oxygen supply was needed to crystallize the film to a single phase of rutile during the post-annealing. However, the interfacial SiO2 layer between the TiO2 and the Si substrate simultaneously grew thicker than 2 nm. As the interfacial SiO2 grew, the leakage current was decreased and the equivalent oxide thickness was increased, in the Au/rutile-type TiO2/Si capacitor. Therefore, we concluded that the growth of the interfacial SiO2 layer thicker than 2 nm is inevitable to form the single phase of rutile-type TiO2 and to decrease the leakage.  相似文献   
4.
Infrared (IR) detecting elements were prepared using positive temperature coefficient (PTC) thermistors with large temperature coefficients of resistivity (α). Their compositions were denoted as Ba1−x Sr x Nb0.003Ti0.997O3 + 1 mol % TiO2 + 0.07 mol %MnO (x=0, 0.2), and their temperature coefficients of resistivity were 78 and 50% K−1, respectively. Their IR sensing properties were measured under the self-regulating heating conditions, and were compared with those of a detector with small α (18 % K−1). It was shown that large α was effective for controlling the element temperature by self-regulating heating and for improving sensitivity. The responsivity,R v of the element withx=0.2 was 980 VW−1, and was as large as those of pyroelectric detectors. Expressions which normalize the sensitivity and the thermal time constant were derived. From these expressions, criteria for improving some IR sensing properties were obtained.  相似文献   
5.
A second-generation model of cubicletype gas-insulated switchgear (C-GIS) with composite insulation incorporating SF6 gas has been developed. The design does not require a gas process in field assembly; it has high reliability and its installation is more rapid; and a further reduction in size is achieved. The design principles are described in detail.  相似文献   
6.
A modified surgical splint for Le Fort I osteotomies with transverse expansion is presented. The splint is made of a transpalatal stainless steel bar with acrylic abutment against the palatal surface of the molar and bicuspid tooth. It is rigid and renders excellent retention. It causes minimal patient discomfort, and oral hygiene is hardly compromised.  相似文献   
7.
The influence of multi-coatings of LaB6-Si/polycarbosilane/SiO2 on the oxidation behaviour of carbon/carbon composite materials was investigated in the temperature range from 500 to 1400 °C. The additives of LaB6-Si offered lower oxidation rates and accelerated increases in oxidation rates at temperatures below 900 °C. The coating of polycarbosilane (PCS) improved the compatibility of the coating on the carbon/carbon composite and lowered the oxidation rates of the LaB6-Si coated composite below the transition temperature. With the SiO2 coating, the cracks of the LaB6-Si/PCS coating was sealed and a good oxidation resistance of the LaB6-Si/PCS/SiO2 coated composite was found at temperatures up to 1300 °C.  相似文献   
8.
The Gmicro/500, which features a RISC-like dual-pipeline structure for high-speed execution of basic instructions and represents a significant advance for the TRON architecture, is presented. Upwardly-object-compatible with earlier members of the Gmicro series, this microprocessor uses resident dedicated branch buffers to greatly enhance branch instruction execution speed. Its microprograms simultaneously use dual execution blocks to execute high-level language instructions effectively. Fabricated with a 0.6-μm CMOS technology on a 10.9-mm×16-mm die, the chip operates at 50/66 MHz and achieves a processing rate of 100/132 MIPS  相似文献   
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10.
K. Ohkita  M. Uchiyama  H. Nishioka 《Carbon》1978,16(3):195-198
In order to obtain more detailed information on the mechanism of the polymerization of N-vinyl-carbazole (N-VC) in the presence of carbon black, a comparison of the rates of conversion under various conditions was made and the following results were obtained. The phenolic hydroxyl groups on the surface of carbon black were found to have an ability to initiate the polymerization, and an increase in dielectric constant of the solvent increased the rate of polymerization. Using the mixture of N-VC and comonomers such as styrene or methyl methacrylate, we found that styrene gives a copolymer with N-VC, while methyl methacrylate gives no copolymer during the early stage of polymerization. The phenomena observed here indicate that the nature of polymerization of N-VC initiated by carbon black is cationic.  相似文献   
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