A CMOS multichannel 10-Gb/s transceiver

We describe a CMOS multichannel transceiver that transmits and receives 10 Gb/s per channel over balanced copper media. The transceiver consists of two identical 10-Gb/s modules. Each module operates off a single 1.2-V supply and has a single 5-GHz phase-locked loop to supply a reference clock to two transmitter (Tx) channels and two receiver (Rx) channels. To track the input-signal phase, the Rx channel has a clock recovery unit (CRU), which uses a phase-interpolator-based timing generator and digital loop filter. The CRU can adjust the recovered clock phase with a resolution of 1.56 ps. Two sets of two-channel transceiver units were fabricated in 0.11-/spl mu/m CMOS on a single test chip. The transceiver unit size was 1.6 mm /spl times/ 2.6 mm. The Rx sensitivity was 120-mVp-p differential with a 70-ps phase margin for a common-mode voltage ranging from 0.6 to 1.0 V. The evaluated jitter tolerance curve met the OC-192 specification.     

Experimental study of venous circulatory disturbance by dural sinus occlusion

Using a newly devised model of dural sinus occlusion, we investigated the pathophysiology of venous haemorrhage as well as venous circulatory disturbance. The superior sagittal sinus (SSS) and diploic veins (DV) were occluded in 16 cats. Intracranial pressure (ICP), cerebral blood volume (CBV) and regional cerebral blood flow (rCBF) were measured for 12 hours after the occlusion. At the end of the experiment, cerebral water content was estimated. In another 8 cats additional occlusions of cortical veins were carried out. In both groups, the blood-brain barrier permeability was evaluated with Evans blue or horseradish peroxidase. The SSS and DV occlusion produced a significant increase in ICP and CBV concomitant with a significant decrease in rCBF. Cerebral water content also increased significantly. However, there was no transition of Evans blue and horseradish peroxidase through the cerebral vessels, and no haemorrhages could be observed. In contrast, the additional occlusion of cortical veins produced haemorrhagic infarctions with Evans blue extravasation in 6 out of the 8 cats. These data suggest that dural sinus occlusion may lead to an increase in CBV and cerebral water content resulting in intracranial hypertension and decreased rCBF. The brain oedema in this model seemed to be mainly hydrostatic oedema, and might also be contributed by cytotoxic oedema. The additional occlusion of cortical veins might be essential in the development of haemorrhage in this model, and the blood-brain barrier was also disrupted in these areas.     

Damage tolerance of glass mat/epoxy laminates hybridized with flexible resin under static and impact loading

This study deals with the impact property and damage tolerance of matrix hybrid composite laminates with different laminate constitution. The matrix hybrid composite laminates consisted of the laminae with a conventional epoxy resin and the laminae with a flexible epoxy resin modified from the conventional resin to avoid the interlaminar delamination. The impact energy absorption ratio greatly depended on the matrix resin placed at the impact face. The energy absorption was almost constant if the conventional resin was placed at the impact surface layer, while it increased exponentially with the increasing fraction of the flexible resin if the flexible resin was placed at the impact face. The impact energy was absorbed by the damage development and propagation in the laminate with conventional resin laminae as the impacted face, while it was absorbed by both the recoverable deformation of the flexible resin and the damage propagation in the laminate with flexible resin laminae as the impacted face.     

Au/Pt/Ti/Ni ohmic contacts to p-ZnTe

Ohmic contacts of Au/Pd/Ti/Ni to p-ZnTe show a minimum specific contact resistance of 10^-6 Ωcm² for a p-type doping level of 3×10¹⁹ cm^-3 and at an annealing temperature of 300°C. The Ni and Ti layers are very effective in improving the electrical properties of these contact     

A semi-static complementary gain cell technology for sub-1 V supplyDRAM's

A new semi-static complementary gain cell for future low power DRAM's has been proposed and experimentally demonstrated. This gain cell consists of a write-transistor and its opposite conduction type read-transistor with a heating gate as a storage node which causes a shift in the threshold voltage. This gain cell provides a two orders of magnitude larger cell signal output and higher immunity to noise on the bitlines when compared with a conventional one-transistor DRAM cell without increasing the storage capacitance even at a supply voltage of 0.8 V. The 0.87 μm² cell size is achieved by using a 0.25 μm design rule with a polysilicon thin-film transistor built in the trench and phase shifted i-line lithography     

Effect of 8 MeV electron irradiation on electrical properties of CuInSe2 thin films

Radiation damages due to 8 MeV electron irradiation in electrical properties of CuInSe₂ thin films have been investigated. The n-type CuInSe₂ films in which the carrier concentration was about 3×10¹⁶ cm⁻³, were epitaxially grown on a GaAs(0 0 1) substrate by RF diode sputtering. No significant change in the electrical properties was observed under the electron fluence <3×10¹⁶ e cm⁻². As the electron fluence exceeded 10¹⁷ e cm⁻², both the carrier concentration and Hall mobility slightly decreased. The carrier removal rate was estimated to be about 0.8 cm⁻¹, which is slightly lower than that of III–V compound materials.     

Flexural properties of moldings of rigid polyurethane made by reaction injection molding

Flexural properties of moldings made by Reaction Injection Molding (RIM), which are structural foams consisting of high density skin and low density core, were investigated by three-point bending tests. Two failure modes were observed in bending tests of the moldings made by RIM, and they are classified as follows according to the density ratio of skin layer to core layer: the opposite side of the skin layer to which load was subjected failed by tensile stress: and the same side of the skin layer to which load was subjected failed by compressive stress, causing wrinkling or buckling. Then the conventional composite beam theory was applied to the former failure mode and Hoff s buckling theory to the latter, and equations were derived to predict the flexural properties of the structural foams, which involved buckling from the flexural properties of solid construction. In addition, it has been shown that there exists a density distribution that maximizes the flexural strength of the moldings made by RIM with a given overall density. The results obtained here should be useful to the optimum structural design of moldings made by RIM.