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Dual-band infrared detectors made on high-quality HgCdTe epilayers grown by molecular beam epitaxy on CdZnTe or CdTe/Ge substrates 总被引:2,自引:0,他引:2
P. Ballet F. Noël F. Pottier S. Plissard J. P. Zanatta J. Baylet O. Gravrand E. De Borniol S. Martin P. Castelein J. P. Chamonal A. Million G. Destefanis 《Journal of Electronic Materials》2004,33(6):667-672
In this paper, we present all the successive steps for realizing dual-band infrared detectors operating in the mid-wavelength
infrared (MWIR) band. High crystalline quality HgCdTe multilayer stacks have been grown by molecular beam epitaxy (MBE) on
CdZnTe and CdTe/Ge substrates. Material characterization in the light of high-resolution x-ray diffraction (HRXRD) results
and dislocation density measurements are exposed in detail. These characterizations show some striking differences between
structures grown on the two kinds of substrates. Device processing and readout circuit for 128×128 focal-plane array (FPA)
fabrication are described. The electro-optical characteristics of the devices show that devices grown on Ge match those grown
on CdZnTe substrates in terms of responsivity, noise measurements, and operability. 相似文献
4.
The resistance changes in the thin film Au/Pd and Al/Au systems are investigated at a temperature of 350°C (Au/Pd) and in the range 100–200°C (Al/Au). Except for the original Au/Pd and Al/Au data, the experimental Au/Pd values published in the paper by Hall et al. are evaluated. The correct mathematical solutions for lateral diffusion from grain boundaries into grains and for interdiffusion in two-film samples are used in interpreting the experimental data. The evaluated values of the diffusion coefficient D satisfy the Arrhenius relationships and yield reliable information on the activation enthalpies H of the interdiffusion processes. However, the values of the frequency factors D0 are less reliable, owing to their direct dependence on the grain size (Au/Pd) or on the film thicknesses (Al/Au). 相似文献
5.
Rommeluère S Haïdar R Guérineau N Deschamps J De Borniol E Million A Chamonal JP Destefanis G 《Applied optics》2007,46(9):1379-1384
We present what is believed to be a novel experimental method to measure the technological parameters (spectral response and quantum yield) of an infrared focal plane array. This method makes original use of a Fourier transform spectrometer, which allows us to simultaneously extract the spectral performances of all pixels from one single set of measurements. The methodology used and the principle of the experimental setup are detailed. A Fourier analysis is shown to provide various optogeometrical information on the detector microstructure. A demonstrator based on the HgCdTe technology was designed, and satisfactory experimental results were obtained. 相似文献
6.
Passmore C Million M Kirr M Bartz J Akselrod MS Devita A Berard J 《Radiation protection dosimetry》2012,150(2):231-238
A neutron field characterisation was conducted at the AREVA Melox Plant to determine the response of passive and active neutron dosemeters for several stages in the mixed oxide fuel manufacturing process. Landauer Europe provides radiation dosimetry to many contractors working at the Melox site. The studies were conducted to assist in determining the neutron radiation fields the workers are exposed to routinely, evaluate the need for specific neutron correction factors and to ensure that the most accurate neutron dose is reported for the Melox Plant workers. 相似文献
7.
Status of the MBE technology at leti LIR for the manufacturing of HgCdTe focal plane arrays 总被引:2,自引:0,他引:2
P. Ferret J. P. Zanatta R. Hamelin S. Cremer A. Million M. Wolny G. Destefanis 《Journal of Electronic Materials》2000,29(6):641-647
This paper presents recent developments that have been made in Leti Infrared Laboratory in the field of molecular beam epitaxy
(MBE) growth and fabrication of medium wavelength and long wavelength infrared (MWIR and LWIR) HgCdTe devices. The techniques
that lead to growth temperature and flux control are presented. Run to run composition reproducibility is investigated on
runs of more than 15 consecutively grown layers. Etch pit density in the low 105 cm−2 and void density lower than 103 cm−2 are obtained routinely on CdZnTe substrates. The samples exhibit low n-type carrier concentration in the 1014 to 1015 cm−3 range and mobility in excess of 105 cm2/Vs at 77 K for epilayers with 9.5 μm cut-off wavelength. LWIR diodes, fabricated with an-on-p homojunction process present
dynamic resistance area products which reach values of 8 103 Ωcm2 for a biased voltage of −50 mV and a cutoff wavelength of 9.5 μm at 77 K. A 320 × 240 plane array with a 30 μm pitch operating
at 77 K in the MWIR range has been developed using HgCdTe and CdTe layers MBE grown on a Germanium substrate. Mean NEDT value
of 8.8 mK together with an operability of 99.94% is obtained. We fabricated MWIR two-color detectors by the superposition
of layers of HgCdTe with different compositions and a mixed MESA and planar technology. These detectors are spatially coherent
and can be independently addressed. Current voltage curves of 60 × 60 μm2 photodiodes have breakdown voltage exceeding 800 mV for each diode. The cutoff wavelength at 77 K is 3.1 μm for the MWIR-1
and 5 μm for the MWIR-2. 相似文献
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S. Plissard G. Giusti B. Polge P. Ballet A. Million X. Biquard E. Molva JP. Barnes P. Holliger 《Journal of Electronic Materials》2007,36(8):919-924
Extended x-ray absorption fine structure (EXAFS) experiments using the As K-edge have been carried out at the European Synchrotron Radiation Facility on two molecular beam epitaxy (MBE) grown arsenic-doped
HgCdTe samples. Arsenic (As) is provided by a radio-frequency plasma cell and was incorporated to a level of a few 1018 at·cm−3. Both samples were analyzed as grown and after a high-temperature anneal (410°C/1 h) under saturated mercury pressure. The
EXAFS signature of as-grown and annealed samples are strikingly different, indicating a drastic change in the environment
of the As atom. In any case, the EXAFS signal originates from at least two different contributions and is found to be dominated
by As clusters. The other contribution for as-grown samples comes from tellurium neighbors indicating that As incorporates
partially in the (Cd,Hg) site. 相似文献