Electrowetting-Assisted Generation of Ultrastable High Charge Densities in Composite Silicon Oxide–Fluoropolymer Electret Samples for Electric Nanogenerators

Electric nanogenerators that directly convert the energy of moving drops into electrical signals require hydrophobic substrates with a high density of static electric charge that is stable in “harsh environments” created by continued exposure to potentially saline water. The recently proposed charge-trapping electric generators (CTEGs) that rely on stacked inorganic oxide–fluoropolymer (FP) composite electrets charged by homogeneous electrowetting-assisted charge injection (h-EWCI) seem to solve both problems, yet the reasons for this success have remained elusive. Here, systematic measurements at variable oxide and FP thickness, charging voltage, and charging time and thermal annealing up to 230 °C are reported, leading to a consistent model of the charging process. It is found to be controlled by an energy barrier at the water-FP interface, followed by trapping at the FP-oxide interface. Protection by the FP layer prevents charge densities up to −1.7 mC m⁻² from degrading and the dielectric strength of SiO₂ enables charge decay times up to 48 h at 230 °C, suggesting lifetimes against thermally activated discharging of thousands of years at room temperature. Combining high dielectric strength oxides and weaker FP top coatings with electrically controlled charging provides a new paradigm for developing ultrastable electrets for applications in energy harvesting and beyond.     

Fast and accurate 4‐node quadrilateral

An accurate and variationally consistent 4‐node quadrilateral element is introduced where high coarse mesh accuracy and low mesh distortion sensitivity are characteristic qualities, even when incompressibility is approached for plane strain. One‐point quadrature integration procedure is adopted and a new improved stabilization technique is developed. Orthogonality conditions are utilized so that the patch test is satisfied for arbitrary quadrilaterals. Several numerical examples including a convergence rate study are presented which confirm the excellent performance of this element. Copyright © 2004 John Wiley & Sons, Ltd.     

Investigation of iodine as a donor in MBE grown Hg1−xCdxTe

N-type Hg_1−xCd_xTe layers with x values of 0.3 and 0.7 have been grown by molecular beam epitaxy using iodine in the form of CdI₂ as a dopant. Carrier concentrations up to 1.1 × 10¹⁸ cm⁻³ have been achieved for x = 0.7 and up to 7.6 × 10¹⁷ cm⁻³ for x=0.3. The best low temperature mobilities are 460 cm²/(Vs) and 1.2 × 10⁵ cm²/(Vs) for x=0.7 and x=0.3, respectively. Using CdI₂ as the dopant modulation doped HgTe quantum well structures have been grown. These structures display very pronounced Shubnikov-de Haas oscillations and quantum Hall plateaus. Electron densities in the 2D electron gas in the HgTe quantum well could be varied from 1.9 × 10¹¹ cm⁻² up to 1.4 × 10¹² cm⁻² by adjusting the thicknesses of the spacer and doped layer. Typical mobilities of the 2D electron gas are of the order of 5.0 × 10⁴ cm²/(Vs) with the highest value being 7.8 × 10⁴ cm²/(Vs).     

Up Scope

The scope of the magazine is being expanded to incorporate reliability and dependability concerns and its readership will include members of the IEEE Reliability Society. This expansion is appropriate because the requirements for a system to be reliable, safe, secure (i.e. its dependability or trustworthiness attributes) often need to be considered together in order to achieve the desired result.     

Simulating Ramsey-Type Fringes in a Pulsed Microwave-Driven Classical Josephson Junction

We present evidence for a close analogy between the nonlinear behaviour of a pulsed microwave-driven Josephson junction at low temperature and the experimentally observed behaviour of Josephson systems operated below the quantum transition temperature under similar conditions. We specifically address observations of Ramsey-type fringe oscillations, which can be understood in classical nonlinear dynamics as results of slow transient oscillations in a pulsed microwave environment. Simulations are conducted to mimic experimental measurements by recording the statistics of microwave-induced escape events from the anharmonic potential well of a zero-voltage state. Observations consistent with experimentally obtained Ramsey-type oscillations are found in the classical model. An erratum to this article can be found at