Noise analysis of double gate composite InAs based HEMTs for high frequency applications

Microsystem Technologies - The quantitative analysis of microwave noise available in the double gate (DG) high electron transistors of mobility (HEMT) is reported in this paper. For this analysis,...     

Noise Characterization of InAs Based Composite Channel DG -MOSHEMT with Different Gate Dielectrics

Silicon - This work determines the noise characterization of Indium Arsenide (InAs) based Metal Oxide Semiconductor High Electron Mobility Transistor (MOSHEMTs) with different gate dielectrics for...     

Influence of Barrier with Gate Sinking on the Performance of InAs Composite Channel DMDG-HEMT Devices for High-Frequency Applications

Silicon - In this work, the impact of barrier thickness (Tb) on the behavior of InGaAs/InAs/InGaAs composite channel Dual material Double gate (DMDG) high electron mobility transistor (HEMT)...