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1.
Yuzhu Su Junpu Wang Xin Li Qiqi Tang Jing Yang Li Lei Yi Tian Zhiwei Wang Duanwei He 《Ceramics International》2021,47(15):21077-21082
The in situ axial X-ray diffraction patterns of four ceramic powder samples (MgO, Al2O3, AlN, and cBN) that were compressed in a diamond anvil cell under uniaxial non-hydrostatic conditions were recorded. The microscopic deviatoric stress as a function of the pressure was determined from the X-ray diffraction peak broadening analysis: the curves increased approximately linearly with the pressure at the initial compression stage and then levelled off under further compression. Pressure-induced transparency was observed in all of the samples under compression, and the pressure at the turning point on the curves of the microscopic deviatoric stress versus pressure corresponded to the pressure at which the samples became transparent. Analysis of the microstructural features of the pressure-induced transparent samples indicated that the compression caused the grains to fracture, and the broken grains bonded with each other. We demonstrated that the ceramics’ pressure-induced transparency was a process during which the grains were squeezed and broken, the pores were close between the grains, and the broken grains were re-bonded under compression. 相似文献
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Qiqi Peng Xu Jiang Yifan Chen Wei Zhang Jun Jiang Anquan Jiang 《Ceramics International》2021,47(16):22753-22759
Large domain wall (DW) conductivity in an insulating ferroelectric plays an important role in the future nanosensors and nonvolatile memories. However, the wall current was usually too small to drive high-speed memory circuits and other agile nanodevices requiring high output-powers. Here, a large domain-wall current of 67.8 μA in a high on/off ratio of ~4460 was observed in an epitaxial Au/BiFeO3/SrRuO3 thin-film capacitor with the minimized oxygen vacancy concentration. The studies from read current-write voltage hysteresis loops and piezo-response force microscope images consistently showed remaining of partially unswitched domains after application of an opposite poling voltage that increased domain wall density and wall current greatly. A theoretical model was proposed to explain the large wall current. According to this model, the domain reversal occurs with the appearance of head-to-head and tail-to-tail 180° domain walls (DWs), resulting in the formation of highly conductive wall paths. As the applied voltage increased, the domain-wall number increased to enhance the on-state current, in agreement with the measurements of current-voltage curves. This work paves a way to modulate DW currents within epitaxial Au/BiFeO3/SrRuO3 thin-film capacitors through the optimization of both oxygen vacancy and domain wall densities to achieve large output powers of modern domain-wall nanodevices. 相似文献
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A kind of complex additive mainly containing Al, Mg, F, and O was prepared. The synthetical performances of the property-modified prebaked anodes containing additives were tested in laboratory. On the basis of ideal testing results obtained, a large number of industrial prebaked property-modified anodes are prepared in a large-scale aluminum company. Further more, they are all used in 160 kA prebaked anode aluminum electrolysis cells. The statistic result show that, compared with common anodes, the property-modified ones enhance current by 11.6 kg per ton aluminum averagely. 相似文献
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本文研究在13SiMnNiCrMoV 结构钢中用尖裂纹的应力强度因子来反映三点弯曲缺口试样的疲劳裂纹萌生规律。当 R=0.1,f=100Hz,试样尺寸 B×W×L=12.5×25×117mm 时,缺口名义应力幅的门槛值为Δσ_(th)=3315ρ~(0.352) MPa,0.5mm≤ρ≤5mmΔK_(th)=250ρ~(0.352) MPam~(1/2)门槛值与ρ有关。同时得到缺口裂纹萌生的循环次数 N_i 与名义应力幅Δσ、缺口曲率半径ρ的定量关系是N_i=3.98×10~(22)ρ~(1.62)/Δσ~(4.85),N_i≤10~(5.5)并讨论了(ΔK_1/ρ~(1/2))_(th)与ρ无关的结论。 相似文献
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