Hydrogen annealing effect on DC and low-frequency noise characteristics in CMOS FinFETs

The hydrogen annealing process has been used to improve surface roughness of the Si-fin in CMOS FinFETs for the first time. Hydrogen annealing was performed after Si-fin etch and before gate oxidation. As a result, increased saturation current with a lowered threshold voltage and a decreased low-frequency noise level over the entire range of drain current have been attained. The low-frequency noise characteristics indicate that the oxide trap density is reduced by a factor of 3 due to annealing. These results suggest that hydrogen annealing is very effective for improving device performance and for attaining a high-quality surface of the etched Si-fin.     

A concise process technology for 3-D suspended radio frequency micro-inductors on silicon substrate

In this letter, a concise process technology is proposed for the first time to enable the fabrication of good quality three-dimensional (3-D) suspended radio frequency (RF) micro-inductors on bulk silicon, without utilizing the lithography process on sidewall and trench-bottom patterning. Samples were fabricated to demonstrate the applicability of the proposed process technology.     

Conversion of acrylonitrile-based precursors to carbon fibres

The progress of stabilization of two compositions of acrylic fibres with various orientations has been followed by a variety of techniques. The thermooxidative treatments for stabilization have been carried out in a continuous process and also in a batch process under free shrinkage, constant length and constant tension conditions. The morphological model of acrylic fibres consists of an alternating sequence of laterally ordered and laterally disordered regions along the fibre direction. This structure is consistent with the observations based on small-angle X-ray scattering of copper- impregnated precursor fibres and thermomechanical response, thermal stress development, calorimetry, wide- and small-angle X-ray scattering and sonic modu-lus measured at different extents of stabilization. Lateral as well as orientational order in these fibres can be increased markedly through a high-temperature deformation process prior to stabilization. An increase in perfection and extent of order is observed in the early stages of stabilization. There is also a simultaneous decrease in the orientation of the disordered phase at this stage and the extent of this decrease depends on the axial constraints imposed on the fibre. Little difference in the rate of stabilization is observed as measured by density or oxygen uptake for fibres with different extents of orientation, lateral order or restraint. Fibres containing itaconic add, a stabilization catalyst did show an increased rate of stabilization. Inferences have been drawn regarding additional research pertaining to achieving high order in precursor fibres, minimizing orientational relaxation during oxidative stabilization, and the techniques for monitoring the extents of the stabilization treatment and the changes in relevant morphological parameters.     

Computer Aided Tolerance assignment

Tolerances are basic to the production of every part. This is because perfect parts cannot be produced with existing processes and machines. The determination of tolerances for the individual parts of a functional assembly is critical, but not trivial. Numerous approaches are suggested in past literature for (analytical) tolerance allocation. With the advent of total automation, more attempts are being made to computerize manual design tasks. Tolerance design, assignment and allocation can also be fully automated if the assembly function can be estimated by the computer.

In the present paper, an attempt is made to computerize tolerance assignment. A simple example of a two piece assembly, viz., a fit, is used to demonstrate the developed methodology. A feature extraction is first performed from both detail and assembly drawings. Then, probable assembly interfaces are determined using a rule based procedure. Consequently, tolerances are assigned to the basic dimensions of each feature and to the assembly interfaces using a tolerance database and user interaction. More complex analysis for tolerance allocation is also under study.     

D.c. conduction studies on thermally evaporated neodymium oxide thin films

Aluminium-neodymium oxide-aluminium thin film capacitors have been prepared by thermal evaporation and the d.c. conduction properties of these films have been studied. The thicknesses of the films have been determined by a multiple beam interferometer. The current-voltage power-law dependence showed that the conduction in these films is space-charge limited. The linear dependence of the current density on the square root of the applied field confirmed the exponential trap distribution. The trap density has been found to be of the order of 10²⁶ m^–3. It has also been observed that the Schottky type of conduction is predominant in the high-field region and the height of the Schottky barrier has been determined. It is seen that the conduction mechanism is an activated process with the activation energy decreasing with increasing field.