Self-identification algorithm for zeolite-based thermal capacity gas sensor

Microsystem Technologies - We demonstrate a new operation mode of thermal gas sensor based on thermal capacity extraction with identification algorithm. The system is a silicon microstructure...     

Micro-electro-mechanical systems fast fabrication by selective thick polysilicon growth in epitaxial reactor

A thick layer selective polysilicon growth technique has been developed for micro-electro-mechanical systems (MEMS) fabrication. It allows fast MEMS fabrication without using silicon on insulator wafers or deep ICPRIE etching. The fabrication technique is based on two main steps: a first seed layer of polysilicon is deposited and patterned; the second step consists in the selective growth of this layer in an epitaxial reactor. The first part of this work is devoted to the optimisation of growth parameters. Afterwards, this technique is applied for fabrication of different kinds of actuators, involving films several microns thick with good mechanical properties such as a low mechanical stress and a low roughness of the polysilicon film surface. Furthermore, thermal actuator prototypes were fabricated by using this technique;showing good mechanical properties and high reliability.     

Horizontal buried channels in monocrystalline silicon

A thick layer selective polysilicon growth technique has been developed for micro-electro-mechanical systems (MEMS) fabrication. It allows fast MEMS fabrication without using silicon on insulator wafers or deep ICPRIE etching. The fabrication technique is based on two main steps: a first seed layer of polysilicon is deposited and patterned; the second step consists in the selective growth of this layer in an epitaxial reactor. The first part of this work is devoted to the optimisation of growth parameters. Afterwards, this technique is applied for fabrication of different kinds of actuators, involving films several microns thick with good mechanical properties such as a low mechanical stress and a low roughness of the polysilicon film surface. Furthermore, thermal actuator prototypes were fabricated by using this technique;showing good mechanical properties and high reliability.

     

Horizontal buried channels in monocrystalline silicon

This paper reports, horizontal buried channels in monocrystalline silicon. Those channels are few microns wide and height and several hundred microns long. The main applications for those buried channels are micro-fluidic networks for MEMS devices and cooling systems for integrated circuits. Their fabrication is based on integrated circuit standard processes such as selective monocrystalline epitaxial growth and high temperature annealing. The major interest of the method is its compatibility with integrated circuit manufacturing technology.