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排序方式: 共有401条查询结果,搜索用时 15 毫秒
1.
Kumar Kuila Saikat Kumbhakar Partha Sekhar Tiwary Chandra Kumar Kundu Tarun 《Journal of Materials Science》2022,57(19):8658-8675
Journal of Materials Science - Hybrid oxidation methodologies (HOMs) and active site enrichment of 2D nanocatalyst through defects induction are ubiquitously used for generating adequate reactive... 相似文献
2.
A.H. Gnauck S. Chandrasekhar P.J. Winzer 《Photonics Technology Letters, IEEE》2006,18(5):697-699
We experimentally demonstrate a 10.7-Gb/s duobinary transmission system operating over a chromatic-dispersion range of /spl sim/12 000 ps/nm. Heterodyne detection and maximum-likelihood sequence estimation are employed to achieve this result. 相似文献
3.
S. Chandrasekhar K. G. Satyanarayana P. N. Pramada P. Raghavan T. N. Gupta 《Journal of Materials Science》2003,38(15):3159-3168
Rice husk is an abundantly available waste material in all rice producing countries. In certain regions, it is sometimes used as a fuel for parboiling paddy in the rice mills. The partially burnt rice husk in turn contributes to more environmental pollution. There have been efforts not only to overcome this but also to find value addition to these wastes using them as secondary source of materials. Rice husk contains nearly 20% silica, which is present in hydrated amorphous form. On thermal treatment, the silica converts to crystobalite, which is a crystalline form of silica. However, under controlled burning conditions, amorphous silica with high reactivity, ultra fine size and large surface area is produced. This micro silica can be a source for preparing advanced materials like SiC, Si3N4, elemental Si and Mg2Si. Due to the high pozzolanic activity, this rice husk silica also finds application in high strength concrete as a substitute for silica fume. Possibility of using this silica as filler in polymers is also studied. The present paper is an attempt to consolidate and critically analyse the research work carried out so far on the processing, properties and application of rice husk silica in various laboratories and also highlighting some results on the processing and characterization of RHA and reactive silica obtained from it in the authors' laboratory. 相似文献
4.
A 32-channel 12.5 GHz-spaced free-space demux with low crosstalk and low polarisation dependent loss has been constructed. Using this demux, vestigial sideband filtering at 10 Gbit/s has been studied. It is shown that this demux can achieve very high spectral efficiency without polarisation division multiplexing 相似文献
5.
Chandrasekhar S. Lunardi L.M. Gnauck A.H. Ritter D. Hamm R.A. Panish M.B. Qua G.J. 《Electronics letters》1992,28(5):466-468
Metal organic molecular beam epitaxy (MOMBE) was successfully used for the first time to realise a high speed monolithic photoreceiver. Incorporating an InGaAs pin photodetector followed by a transimpedance preamplifier circuit implemented with InP/InGaAs heterojunction bipolar transistors (HBTs), the OEIC photoreceiver had a bandwidth of 6 GHz and a midband transimpedance of 350 Omega . In a system experiment performed at 10 Gbit/s, the receiver exhibited a sensitivity of -15.5 dBm for a bit error rate of 10/sup -9/ at a wavelength of 1.53 mu m. This is the first demonstration of operation of a long wavelength OEIC photoreceiver at this speed.<> 相似文献
6.
Penalty interference of nonlinear propagation impairments and polarisation mode dispersion (PMD) caused signal distortions is experimentally investigated 相似文献
7.
Arun Chandrasekhar Steven Brebels Serguei Stoukatch Eric Beyne Walter De Raedt Bart Nauwelaers 《Microelectronics Reliability》2003,43(3):351-357
At frequencies beyond 1 GHz, every component of the IC package contributes to the RF performance, whether required or not. In this work, we study the effects of packaging materials namely, the substrate and the globtop/underfill material on RF performance. We have measured interconnects on two area-array CSPs, the ball grid array and the polymer stud grid array using IMEC’s MCM-D technology. The measurements on the package interconnect show that the losses in the package substrate material account for about 50% of the total losses at 1.8 GHz and this drops to less than 20% at 5.2 GHz. The losses due to impedance mismatch dominate the losses especially below 10 GHz and considerable improvement in performance cannot be obtained by using an improved/expensive substrate. The other study is about the influence of globtop/underfill materials on wirebonds (through 3D EM simulations) as well as on standard 50 Ω MCM-D transmission lines (through experiments). While a higher value of dielectric constant of the globtop/underfill material is better on wirebonds, the influence of loss tangent is felt only above values of 0.1. The influence of seven different globtop/undefill materials on 50 Ω transmission lines has been used to extract their dielectric constant and loss tangent values at 30 GHz. These results are very valuable since one can hardly find the properties of globtop/underfill materials beyond 1 GHz. 相似文献
8.
9.
Kundu Abhijit Adhikari Saikat Das Arnima Kanjilal Maitreyi Ray Mukherjee Moumita 《Microsystem Technologies》2021,27(2):569-584
Microsystem Technologies - Photo-sensors are integral part of different bio-medical diagnostic equipment. Each type of bio-molecules possess unique spectral fingerprint in visible wavelength region... 相似文献
10.
lpcvd polycrystalline silicon films were deposited on thermally oxidized silicon as well as onlpcvd silicon nitride deposited on silicon. Acw argon ion laser was used to recrystallize the polysilicon film into large grains (grain size from 5μm to 40μm). Boron was then implanted and standard N-channel silicon gate process and N-channel metal gate process were carried out
to realisemosfets on this material. Channel mobilities upto 450 cm2/V-sec for electrons have been measured. This thin filmmosfet has a four-terminal structure with a top and a bottom gate and the influence of one gate on the drain current due to the
other gate has been investigated. Comparison of theI
D
v-V
D
curves of the devices with physical models was found in good agreement. 相似文献