Photon and vibration synergism on planar defects induced 2D-graphitic carbon nitride for ultrafast remediation of dyes and antibiotic ampicillin

Journal of Materials Science - Hybrid oxidation methodologies (HOMs) and active site enrichment of 2D nanocatalyst through defects induction are ubiquitously used for generating adequate reactive...     

Dispersion-tolerant 10-gb/s duobinary system employing heterodyne detection and MLSE

We experimentally demonstrate a 10.7-Gb/s duobinary transmission system operating over a chromatic-dispersion range of /spl sim/12 000 ps/nm. Heterodyne detection and maximum-likelihood sequence estimation are employed to achieve this result.     

Review Processing, properties and applications of reactive silica from rice husk—an overview

Rice husk is an abundantly available waste material in all rice producing countries. In certain regions, it is sometimes used as a fuel for parboiling paddy in the rice mills. The partially burnt rice husk in turn contributes to more environmental pollution. There have been efforts not only to overcome this but also to find value addition to these wastes using them as secondary source of materials. Rice husk contains nearly 20% silica, which is present in hydrated amorphous form. On thermal treatment, the silica converts to crystobalite, which is a crystalline form of silica. However, under controlled burning conditions, amorphous silica with high reactivity, ultra fine size and large surface area is produced. This micro silica can be a source for preparing advanced materials like SiC, Si₃N₄, elemental Si and Mg₂Si. Due to the high pozzolanic activity, this rice husk silica also finds application in high strength concrete as a substitute for silica fume. Possibility of using this silica as filler in polymers is also studied. The present paper is an attempt to consolidate and critically analyse the research work carried out so far on the processing, properties and application of rice husk silica in various laboratories and also highlighting some results on the processing and characterization of RHA and reactive silica obtained from it in the authors' laboratory.     

Vestigial sideband filtering at 10 Gbit/s using 12.5 GHzchannel-spacing demux

A 32-channel 12.5 GHz-spaced free-space demux with low crosstalk and low polarisation dependent loss has been constructed. Using this demux, vestigial sideband filtering at 10 Gbit/s has been studied. It is shown that this demux can achieve very high spectral efficiency without polarisation division multiplexing     

A 10 Gbit/s OEIC photoreceiver using InP/InGaAs heterojunction bipolar transistors

Metal organic molecular beam epitaxy (MOMBE) was successfully used for the first time to realise a high speed monolithic photoreceiver. Incorporating an InGaAs pin photodetector followed by a transimpedance preamplifier circuit implemented with InP/InGaAs heterojunction bipolar transistors (HBTs), the OEIC photoreceiver had a bandwidth of 6 GHz and a midband transimpedance of 350 Omega . In a system experiment performed at 10 Gbit/s, the receiver exhibited a sensitivity of -15.5 dBm for a bit error rate of 10/sup -9/ at a wavelength of 1.53 mu m. This is the first demonstration of operation of a long wavelength OEIC photoreceiver at this speed.<>     

Penalty interference of nonlinear intra-channel effects and PMD inultra high-speed TDM systems

Penalty interference of nonlinear propagation impairments and polarisation mode dispersion (PMD) caused signal distortions is experimentally investigated     

The influence of packaging materials on RF performance

At frequencies beyond 1 GHz, every component of the IC package contributes to the RF performance, whether required or not. In this work, we study the effects of packaging materials namely, the substrate and the globtop/underfill material on RF performance. We have measured interconnects on two area-array CSPs, the ball grid array and the polymer stud grid array using IMEC’s MCM-D technology. The measurements on the package interconnect show that the losses in the package substrate material account for about 50% of the total losses at 1.8 GHz and this drops to less than 20% at 5.2 GHz. The losses due to impedance mismatch dominate the losses especially below 10 GHz and considerable improvement in performance cannot be obtained by using an improved/expensive substrate. The other study is about the influence of globtop/underfill materials on wirebonds (through 3D EM simulations) as well as on standard 50 Ω MCM-D transmission lines (through experiments). While a higher value of dielectric constant of the globtop/underfill material is better on wirebonds, the influence of loss tangent is felt only above values of 0.1. The influence of seven different globtop/undefill materials on 50 Ω transmission lines has been used to extract their dielectric constant and loss tangent values at 30 GHz. These results are very valuable since one can hardly find the properties of globtop/underfill materials beyond 1 GHz.     

Design and characterization of asymetrical super-lattice Si/4H-SiC pin photo diode array: a potential opto-sensor for future applications in bio-medical domain

Microsystem Technologies - Photo-sensors are integral part of different bio-medical diagnostic equipment. Each type of bio-molecules possess unique spectral fingerprint in visible wavelength region...     

Transistors made in laser recrystallized polysilicon on insulator films

lpcvd polycrystalline silicon films were deposited on thermally oxidized silicon as well as onlpcvd silicon nitride deposited on silicon. Acw argon ion laser was used to recrystallize the polysilicon film into large grains (grain size from 5μm to 40μm). Boron was then implanted and standard N-channel silicon gate process and N-channel metal gate process were carried out to realisemosfets on this material. Channel mobilities upto 450 cm²/V-sec for electrons have been measured. This thin filmmosfet has a four-terminal structure with a top and a bottom gate and the influence of one gate on the drain current due to the other gate has been investigated. Comparison of theI _D v-V _D curves of the devices with physical models was found in good agreement.