Reusable and Efficient Polystyrene Immobilized Ionic Liquid Catalyst for Batch and Flow Methylation of Hydroquinone

Catalysis Letters - An environmentally benign process for synthesizing 4-methoxyphenol through methylation of hydroquinone using polystyrene immobilized Bronsted acidic ionic liquid is presented....     

The relationship between highly-cited papers and the frequency of citations to other papers within-issue among three top information science journals

Scientometrics - This study investigates a potential relationship between highly-cited scholarly papers and the number of citations received by other papers with which they share a journal issue....     

Impact of adhesive ingredients on adhesion between rubber and brass-plated steel wire in tire

Proficiency on underlying mechanism of rubber-metal adhesion has been increased significantly in the last few decades. Researchers have investigated the effect of various ingredients, such as hexamethoxymethyl melamine, resorcinol, cobalt stearate, and silica, on rubber-metal interface. The role of each ingredient on rubber-metal interfacial adhesion is still a subject of scrutiny. In this article, a typical belt skim compound of truck radial tire is selected and the effect of each adhesive ingredient on adhesion strength is explored. Out of these ingredients, the effect of cobalt stearate is found noteworthy. It has improved adhesion strength by 12% (without aging) and by 11% (humid-aged), respectively, over control compound. For detailed understanding of the effect of cobalt stearate on adhesion, scanning electron microscopy and energy dispersive spectroscopy are utilized to ascertain the rubber coverage and distribution of elements. X-ray photoelectron spectroscopy results helped us to understand the impact of Cu_XS layer depth on rubber-metal adhesion. The depth profile of the Cu_XS layer was found to be one of the dominant factors of rubber-metal adhesion retention. Thus, this study has made an attempt to find the impact of different adhesive ingredients on the formation of Cu_XS layer depth at rubber-metal interface and establish a correlation with adhesion strength simultaneously.     

Scaling planar silicon devices

The generation-over-generation scaling of critical CMOS technology parameters is ultimately bound by nonscalable limitations, such as the thermal voltage and the elementary electronic charge. Sustained improvement in performance and density has required the introduction of new device structures and materials. Partially depleted SOI, a most recent MOSFET innovation, has extended VLSI performance while introducing unique idiosyncrasies. Fully depleted SOI is one logical extension of this device design direction. Gate dielectric tunneling, device self-heating, and single-event upsets present developers of these next-generation devices with new challenges. Strained silicon and high-permittivity gate dielectric are examples of new materials that will enable CMOS developers to continue to deliver device performance enhancements in the sub-100 nm regime.     

Drug rationalization: now for the hard part

In 1995 a national drug policy was finalized in Nepal. The authors outline the measures that were recommended for its implementation and the activities that have so far been undertaken. Much remains to be done, most notably in assisting, coordinating and supervising these activities.     

PES News

This paper presents a new method for the generation of a reference voltage for a dynamic voltage restorer (DVR). These voltages, when injected in series with a distribution feeder by a voltage source inverter, can tightly regulate the voltage at the load terminal against imbalance or harmonics in the source side. It is stipulated that the DVR does not supply any real power in the steady state. The reference voltage generation scheme is validated through digital computer simulation studies.     

A VLSI architecture for a half-edge-based corner detector

Corner detection is a low-level feature detection operator that is of great use in image processing applications, for example, optical flow and structure from motion by image correspondence. The detection of corners is a computationally intensive operation. Past implementations of corner detection techniques have been restricted to software. In this paper we propose an efficient very large-scale integration (VLSI) architecture for detection of corners in images. The corner detection technique is based on the half-edge concept and the first directional derivative of Gaussian. Apart from the location of the corner points, the algorithm also computes the corner orientation and the corner angle and outputs the edge map of the image. The symmetrical properties of the masks are utilized to reduce the number of convolutions effectively, from eight to two. Therefore, the number of multiplications required per pixel is reduced from 1800 to 392. Thus, the proposed architecture yields a speed-up factor of 4.6 over conventional convolution architectures. The architecture uses the principles of pipelining and parallelism and can be implemented in VLSI.