An approach of feature selection using graph-theoretic heuristic and hill climbing

Pattern Analysis and Applications - Search-based methods that use matrix- or vector-based representations of the dataset are commonly employed to solve the problem of feature selection. These...     

A two-dimensional analytical-model-based comparative threshold performance analysis of SOI-SON MOSFETs

A generalized threshold voltage model based on two-dimensional Poisson analysis has been developed for SOI/SON MOSFETs. Different short channel field effects, such as fringing fields, junction-induced lateral fields and substrate fields, are carefully investigated, and the related drain-induced barrier-lowering effects are incorporated in the analytical threshold voltage model. Through analytical model-based simulation, the threshold voltage roll-off and subthreshold slope for both structures are compared for different operational and structural parameter variations. Results of analytical simulation are compared with the results of the ATLAS 2D physics-based simulator for verification of the analytical model. The performance of an SON MOSFET is found to be significantly different from a conventional SOI MOSFET. The short channel effects are found to be reduced in an SON, thereby resulting in a lower threshold voltage roll-off and a smaller subthreshold slope. This type of analysis is quite useful to figure out the performance improvement of SON over SOI structures for next generation short channel MOS devices.     

A novel transfer learning-based short-term solar forecasting approach for India

Neural Computing and Applications - Deep learning models in recent times have shown promising results for solar energy forecasting. Solar energy depends heavily on local weather conditions, and as...     

String mitochondria in mouse soleus muscle

Red myofibers in mouse soleus muscle have two spatially distinct populations of mitochondria: one where these organelles are disposed in large clusters just inside the sarcolemma and the other situated between the myofibrils. In most cases, the interfibrillar mitochondria (IFM), which are much smaller than the subsarcolemmal ones (SSM), are arranged as pairs, with each member on opposite sides of the Z‐line. In some myofibers, the IFM have fused end‐to‐end to form greatly elongated organelles, which we call “string mitochondria.” Although narrow, these can be many sarcomeres in length. The SSM do not form string mitochondria. Most of the string mitochondria exhibit many instances of “pinching,” a process involved in mitochondrial division. Elements of sarcoplasmic reticulum are intimately involved with each mitochondrial membrane invagination. It appears as if the fusion:fission balance of IFM in the soleus muscle is slightly out of kilter, with end‐to‐end fusion predominating over fission. Microsc. Res. Tech. 76:237–241, 2013. © 2012 Wiley Periodicals, Inc.     

A two-dimensional analytical-model-based comparative threshold performance analysis of SOI-SON MOSFETs

A generalized threshold voltage model based on two-dimensional Poisson analysis has been developed for SOI/SON MOSFETs.Different short channel field effects,such as fringing fields,junction-induced lateral fields and substrate fields,are carefully investigated,and the related drain-induced barrier-lowering effects are incorporated in the analytical threshold voltage model.Through analytical model-based simulation,the threshold voltage roll-off and subthreshold slope for both structures are compared for different operational and structural parameter variations.Results of analytical simulation are compared with the results of the ATLAS 2D physics-based simulator for verification of the analytical model.The performance of an SON MOSFET is found to be significantly different from a conventional SOI MOSFET.The short channel effects are found to be reduced in an SON,thereby resulting in a lower threshold voltage roll-off and a smaller subthreshold slope.This type of analysis is quite useful to figure out the performance improvement of SON over SOI structures for next generation short channel MOS devices.     

Comparative DC Characteristic Analysis of AlGaN/GaN HEMTs Grown on Si(111) and Sapphire Substrates by MBE

A comparative assessment of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown by molecular beam epitaxy on silicon and sapphire substrates has been carried out. Large-area power GaN HEMTs with identical device dimensions were fabricated on both substrates. A thicker AlN buffer layer was used for the GaN HEMT on silicon to achieve similar quality and uniformity of GaN epitaxy for rational comparison with that grown on sapphire. Direct-current analysis and physical characterization were carried out to understand the performance of the devices. Mathematical measurement of the instability of the current–voltage (I–V) characteristic at high applied drain bias was carried out to evaluate the performance of both devices. An improved two-dimensional (2D) analysis of the I–V characteristic was performed from a thermal perspective including appropriate scattering effects on the 2D electron gas mobility. The experimental and analytical studies were correlated to reveal the effects of temperature-sensitive scattering phenomena on the mobility as well as on the I–V characteristic at high drain bias in terms of lattice thermal heating. It is observed that the HEMT on Si has improved stability compared with sapphire due to its weaker scattering phenomena at high drain bias, associated with its thermal conductivity. Simulation of 2D thermal mapping was also carried out to distinguish the hot-spot regions of the devices. The comparable electrical performance of these devices illustrates the viability of AlGaN/GaN HEMTs on Si(111) to achieve low-cost stable devices with better thermal power handling for high-voltage applications.