High-performance InGaP/GaAs pnp δ-doped heterojunction bipolar transistor

In this article, a novel InGaP/GaAs pnp δ-doped heterojunction bipolar transistor is first demonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relatively large, the addition of a δ-doped sheet between two spacer layers at the emitter-base (E-B) junction effectively eliminates the potential spike and increases the confined barrier for electrons, simultaneously. Experimentally, a high current gain of 25 and a relatively low E-B offset voltage of 60 mV are achieved. The offset voltage is much smaller than the conventional InGaP/GaAs pnp HBT. The proposed device could be used for linear amplifiers and low-power complementary integrated circuit applications. The article is published in the original.     

Comprehensive investigation on planar type of Pd–GaN hydrogen sensors

This paper reviews both static and dynamic characteristics of a planar-type Pd–GaN metal–semiconductor–metal (MSM) hydrogen sensor. The sensing mechanism of a metal–semiconductor (MS) hydrogen sensor was firstly reviewed to realize the sensing mechanism of the proposed sensor. Symmetrically bi-directional current–voltage characteristics associated with our sensor were indicative of easily integrating with other electrical/optical devices. In addition to the sensing current, the sensing voltage was also used as detecting signals in this work. With regard to sensing currents (sensing voltages), the proposed sensor was biased at a constant voltage (current) in a wide range of hydrogen concentration from 2.13 to 10,100 ppm H₂/N₂. Experimental results reveal that the proposed sensor exhibits effective barrier height variations (sensing responses) of 134 (173) and 20 mV (1) at 10,100 and 2.13 ppm H₂/N₂, respectively. A sensing voltage variation as large as 18 V was obtained at 10,100 ppm H₂/N₂, which is the highest value ever reported. If an accepted sensing voltage variation is larger than 3 (5) V, the detecting limit is 49.1 (98.9) ppm. Moreover, voltage transient response and current transient response to various hydrogen-containing gases were experimentally studied. The new finding is that the former response time is shorter than the latter one. Other dynamic measurements by switching voltage polarity and/or continuously changing hydrogen concentration were addressed, showing the proposed sensor is a good candidate for commonly used MS sensors.     

Hydrogen sensors with double dipole layers using a Pd-mixture-Pd triple-layer sensing structure

This paper reports on new GaN sensors using a Pd-mixture-Pd triple-layer sensing structure to enhance their sensitivity to hydrogen at the tens of ppm level. The proposed hydrogen sensor biased with a constant voltage produced relatively high sensing responses of 4.84 × 10⁵% at 10,100 ppm and 8.7 × 10⁴% at 49.1 ppm H₂ in N₂. The corresponding barrier height variations are calculated to be 220 and 168 mV. When the sensor is biased by a constant current with maximum power consumption of 0.4 mW, a sensing voltage as an output signal showed a voltage shift of more than 17 V (the highest value ever reported) at 49.1 ppm H₂ in N₂. By comparison to Pd-deposited GaN sensors, the improvement in static-state performance is likely attributed to double dipole layers formed individually at the Pd–GaN interface and inside the mixture. Moreover, voltage transient response and current transient response to various hydrogen-containing gases were experimentally studied. The new finding is that the former response time is shorter than the latter one.     

Design of heart rate variability processor for portable 3-lead ECG monitoring system-on-chip

The worldwide population of people over the age of 65 has been predicted to more than double from 1990 to 2025. Therefore, ubiquitous health-care systems have become an important topic of research in recent years. In this paper, an integrated system for portable electrocardiography (ECG) monitoring, with an on-board processor for time–frequency analysis of heart rate variability (HRV), is presented. The main function of proposed system comprises three parts, namely, an analog-to-digital converter (ADC) controller, an HRV processor, and a lossless compression engine. At the beginning, ECG data acquired from front-end circuits through the ADC controller is passed through the HRV processor for analysis. Next, the HRV processor performs real-time analysis of time–frequency HRV using the Lomb periodogram and a sliding window configuration. The Lomb periodogram is suited for spectral analysis of unevenly sampled data and has been applied to time–frequency analysis of HRV in the proposed system. Finally, the ECG data are compressed by 2.5 times using the lossless compression engine before output using universal asynchronous receiver/transmitter (UART). Bluetooth is employed to transmit analyzed HRV data and raw ECG data to a remote station for display or further analysis. The integrated ECG health-care system design proposed has been implemented using UMC 90 nm CMOS technology.