Dual threshold voltage and sleep switch dual threshold voltage DOIND approach for leakage reduction in domino logic circuits

Subthreshold leakage current becomes the major component of total power dissipation as scaling down the feature size. In this paper, two new circuit techniques are proposed for reducing the subthreshold leakage power consumption in domino logic circuit. Dual threshold voltage DOIND (Domino logic with clock and input dependent transistors) and NMOS sleep switch dual threshold voltage DOIND circuits for low leakage domino logic circuits are presented. High threshold voltage transistors are utilized to reduce the leakage current and a sleep transistor is added to the dynamic node that strongly turnoff all the high threshold voltage transistor and significantly reduce the subthreshold leakage power. The proposed circuit techniques, dual threshold voltage DOIND logic and sleep switch dual threshold voltage DOIND logic reduces the leakage current by 71.46 and 74.86% respectively as compared to standard domino logic circuit. Simulation results also shows that both the circuits are less affected by supply and temperature variations. The proposed sleep switch dual threshold voltage DOIND exhibits 19.95% less power consumption with 24% die area overhead for the buffer circuit as compared to standard domino logic circuit. The proposed sleep switch dual threshold voltage DOIND logic has improved normalized figure of merit of 1.17 as compared to standard domino logic circuit.

     

DOIND: a technique for leakage reduction in nanoscale domino logic circuits

A novel DOIND logic approach is proposed for domino logic, which reduces the leakage current with a minimum delay penalty. Simulation is performed at 70 nm technology node with supply voltage 1V for domino logic and DOIND logic based AND, OR, XOR and Half Adder circuits using the tanner EDA tool. Simulation results show that the proposed DOIND approach decreases the average leakage current by 68.83%, 66.6%, 77.86% and 74.34% for 2 input AND, OR, XOR and Half Adder respectively. The proposed approach also has 47.76% improvement in PDAP for the buffer circuit as compared to domino logic.     

Adhesion molecules (E-selectin and ICAM-1) in pulmonary allograft rejection

Vascular endothelial cells act as antigen-presenting cells in the lung allograft and stimulate alloreactive host lymphocytes. Activated lymphocytes and cytokines can induce expression of leukocyte-endothelial adhesion molecules that facilitate invasion of the allograft by circulating leukocytes. To define the role of endothelial HLA class II antigen and adhesion molecule expression in lung allograft rejection, we prospectively analyzed endothelial expression of HLA class II, E-selectin, and intercellular adhesion molecule-1 (ICAM-1) antigens in 52 transbronchial biopsy specimens from 24 lung allograft recipients as compared to normal control subjects. Thirty-one of 52 specimens showed histologic rejection and 8 of 24 patients developed histologic obliterative bronchiolitis (OB) by the end of the study period. Increased expression of HLA class II antigen was seen in 32 of 52 (62%) lung allograft specimens, but increased expression did not correlate with acute rejection or OB. In contrast, E-selectin expression was seen in 30 of 52 (58%) biopsy specimens and was associated with acute rejection (p < 0.005) and with the development of OB (p < 0.05). Increased expression of ICAM-1 was seen in only 18 of 52 (35%) biopsy specimens and did not correlate with acute rejection or OB. These data suggest that E-selectin expression may be a tissue marker of acute and chronic lung rejection possibly by promoting leukocyte adhesion to the allograft endothelium. The high levels of endothelial HLA class II expression may reflect long-term antigenic stimulation of the allograft even in the absence of rejection.