Neural Computing and Applications - Grouping the sensor nodes into clusters is an effective way to organize wireless sensor networks and to prolong the networks’ lifetime. This paper presents... 相似文献
Silicon - In this treatise, we have proposed a Single Material Gate–Dual Gate Impact Ionization Metal Oxide Semiconductor (SMG DG-IMOS) based Pressure Sensor. The pressure sensor has the most... 相似文献
Journal of Signal Processing Systems - Research interest and industry investment in edge computing solutions have increased dramatically in recent years. Consequent quest for balanced performance,... 相似文献
Google Earth search function was used to study the impacts of small-scale spatial ability, large-scale environmental cognition, and geographical knowledge on new technology usage. The participants were 153 junior high students from central Taiwan. Geography grades served as indicators of prior knowledge, mental rotation and abstract reasoning skills as indicators of spatial ability, and sketch maps of school neighborhoods as indicators of environmental cognition (including landmark representation, intersection representation, and frame of reference). Lastly, the authors announced the landmarks searching worksheet and asked the participants to accomplish 16 familiar and unfamiliar landmark searching tasks using Google Earth with keyword search function disabled. The result showed the strongest predictor of landmark searching performance is ‘frame of reference’ in environmental cognition, followed by ‘mental rotation’ of spatial ability, ‘landmark representation’ of environmental cognition, and geographical knowledge. Google Earth landmark searches require complex cognitive processing; therefore, our conclusion is that GIS-supported image search activities give students good practice of active knowledge construction. 相似文献
A gate-all-around charge plasma nanowire field-effect transistor (GAA CP NW FET) device using the negative-capacitance technique is introduced, termed the GAA CP NW negative-capacitance (NC) FET. In the face of bottleneck issues in nanoscale devices such as rising power dissipation, new techniques must be introduced into FET structures to overcome their major limitations. Negative capacitance is an efficient effect that can be incorporated into a device to enhance its performance for low-power applications and help to reduce the operating voltage. The Landau–Khalatnikov equation can be applied in such cases to obtain the effective bias. To determine the effects of negative capacitance, lead zirconate titanate (PZT) ferroelectric material, a ceramic material with perovskite properties, is adopted as a gate insulator. This approach diminishes the supply voltage and reduces the power dissipation in the device. Excluding their polarization properties, ferroelectric materials are similar to dielectric materials, and PZT offers abundant polarization with improved reliability and a higher dielectric capacitance. Without proper tuning of the thickness of the PZT material, hysteresis behavior mat occur. Hence, the thickness of the PZT material (tFE) is an essential parameter to optimize the device performance and achieve a reduced threshold voltage for the GAA CP NW NC-FET device proposed herein. Furthermore, varying the thickness of the PZT ferroelectric material can also enhance the performance. When using the highest values of tFE, improved outcomes with an analogously lower operating voltage are observed. The effects of varying tFE on the performance characteristics of the device including the drain current, transconductance, polarized charge, etc. are also interpreted herein.