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Hybrid integration ofⅢ-Ⅴand ferroelectric materials is being broadly adopted to enhance functionalities in silicon photonic integrated circuits(PICs).Bonding and transfer printing have been the popular approaches for integration of III–V gain media with silicon PICs.Similar approaches are also being considered for ferroelectrics to enable larger RF modulation bandwidths,higher linearity,lower optical loss integrated optical modulators on chip.In this paper,we review existing integration strategies ofⅢ-Ⅴmaterials and present a route towards hybrid integration of bothⅢ-Ⅴand ferroelectrics on the same chip.We show that adiabatic transformation of the optical mode between hybrid ferroelectric and silicon sections enables efficient transfer of optical modal energies for maximum overlap of the optical mode with the ferroelectric media,similar to approaches adopted to maximize optical overlap with the gain section,thereby reducing lasing thresholds for hybridⅢ-Ⅴintegration with silicon PICs.Preliminary designs are presented to enable a foundry compatible hybrid integration route of diverse functionalities on silicon PICs.  相似文献   
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Information Systems and e-Business Management - Prediction of customer demand is an important part of Supply Chain Management, as it helps to avoid over or under production and reduces delivery...  相似文献   
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Xu X  Hasan D  Wang L  Chakravarty S  Chen RT  Fan DL  Wang AX 《Applied physics letters》2012,100(19):191114-1911145
We demonstrate a surface enhanced Raman scattering (SERS) substrate by integrating plasmonic-active SiO(2) nanotubes into Si(3)N(4) gratings. First, the dielectric grating that is working under guided mode resonance (GMR) provides enhanced electric field for localized surface plasmon polaritons on the surface of metallic nanoparticles. Second, we use SiO(2) nanotubes with densely assembled silver nanoparticles to provide a large amount of "hot spots" without significantly damping the GMR mode of the grating. Experimental measurement on Rhodamine-6G shows a constant enhancement factor of 8?~?10 in addition to the existing SERS effect across the entire surface of the SiO(2) nanotubes.  相似文献   
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