全文获取类型
收费全文 | 1599篇 |
免费 | 23篇 |
国内免费 | 4篇 |
专业分类
电工技术 | 57篇 |
化学工业 | 266篇 |
金属工艺 | 48篇 |
机械仪表 | 42篇 |
建筑科学 | 18篇 |
能源动力 | 52篇 |
轻工业 | 69篇 |
水利工程 | 9篇 |
无线电 | 202篇 |
一般工业技术 | 310篇 |
冶金工业 | 419篇 |
原子能技术 | 39篇 |
自动化技术 | 95篇 |
出版年
2023年 | 7篇 |
2022年 | 20篇 |
2021年 | 28篇 |
2020年 | 11篇 |
2019年 | 16篇 |
2018年 | 16篇 |
2017年 | 9篇 |
2016年 | 25篇 |
2015年 | 13篇 |
2014年 | 25篇 |
2013年 | 60篇 |
2012年 | 29篇 |
2011年 | 73篇 |
2010年 | 46篇 |
2009年 | 63篇 |
2008年 | 63篇 |
2007年 | 46篇 |
2006年 | 49篇 |
2005年 | 44篇 |
2004年 | 35篇 |
2003年 | 40篇 |
2002年 | 36篇 |
2001年 | 39篇 |
2000年 | 38篇 |
1999年 | 41篇 |
1998年 | 173篇 |
1997年 | 101篇 |
1996年 | 59篇 |
1995年 | 44篇 |
1994年 | 36篇 |
1993年 | 34篇 |
1992年 | 19篇 |
1991年 | 21篇 |
1990年 | 18篇 |
1989年 | 23篇 |
1988年 | 20篇 |
1987年 | 12篇 |
1986年 | 21篇 |
1985年 | 24篇 |
1984年 | 14篇 |
1983年 | 12篇 |
1982年 | 17篇 |
1981年 | 14篇 |
1980年 | 16篇 |
1979年 | 6篇 |
1977年 | 7篇 |
1976年 | 35篇 |
1975年 | 7篇 |
1974年 | 4篇 |
1973年 | 4篇 |
排序方式: 共有1626条查询结果,搜索用时 15 毫秒
1.
Tsuneaki Matsudaira Masashi Wada Naoki Kawashima Miyuki Takeuchi Daisaku Yokoe Takeharu Kato Masasuke Takata Satoshi Kitaoka 《Journal of the European Ceramic Society》2021,41(5):3150-3160
Mass transfer in polycrystalline Yb2SiO5 wafers with precise composition control was evaluated and analyzed by oxygen permeation experiments at high temperatures using an oxygen tracer. Oxygen permeation proceeded due to mutual grain boundary diffusion of oxide ions and Yb ions without synergistic effects such as acceleration or suppression. The oxygen shielding properties of Yb2SiO5 were compared with those of the other line compounds such as Yb2Si2O7 and Al2O3 based on the determined mass transfer parameters. It was found that the more preferentially an oxide ion diffuses in the grain boundary compared to the interior of the grain, the greater the effect of suppressing the movement of the oxide ion by applying an oxygen potential gradient becomes. 相似文献
2.
Gasification of polyethylene (PE) pellet was studied using atmospheric argon-steam plasma generated by microwave discharge and the feasibility of the process was examined. The experimental results showed that additional steam to argon plasma promoted the weight decrease of PE and enhanced the production of H2, CO, CO2 and CH4. The results confirmed that the treatment of plastics with the steam plasma was effective to obtain synthesis gas. 相似文献
3.
Xin Sun Qiang Lu Moroz V. Takeuchi H. Gebara G. Wetzel J. Shuji Ikeda Changhwan Shin Tsu-Jae King Liu 《Electron Device Letters, IEEE》2008,29(5):491-493
A tri-gate bulk MOSFET design utilizing a low-aspect-ratio channel is proposed to provide an evolutionary pathway for CMOS scaling to the end of the roadmap. 3-D device simulations indicate that this design offers the advantages of a multi-gate FET (reduced variability in performance and improved scalability) together with the advantages of a conventional planar MOSFET (low substrate cost and capability for dynamic threshold-voltage control). 相似文献
4.
Akira Watanabe Yoshimitsu Takeuchi Goji Saeki 《Journal of the American Ceramic Society》1985,68(11):308-C
The length of potassium titanate fibers produced by several conventional methods averages 50 μm, with a maximum of 100 μm. Extremely long fibers (most >1000 μm long) were obtained by calcination in N2 gas flowing at 5.2×10-4 m/s. 相似文献
5.
A new gram-positive, nonmotile coccus is described. Strains IFO 12422T (T = type strain) and IFO 15385 in the Institute for Fermentation, Osaka, culture collection, which were isolated from soil and water, respectively, have the following chemotaxonomic characteristics: menaquinone MK-9(H4); G + C content of DNA of 67 mol%; and LL-diaminopimelic acid, alanine, glycine, and glutamic acid in a molar ratio of ca. 1:2:1:1 (type A3 gamma). Mycolic acids are not present. The taxonomic characteristics of these organisms are different from those of previously described gram-positive, high-G + C-content cocci. The partial 16S rRNA sequence indicated that IFO 12422T represents a distinct line of descent among gram-positive bacteria with a high G + C content. The name Luteococcus japonicus gen. nov., sp. nov. is proposed. The type strain is strain IFO 12422. 相似文献
6.
To help in clarifying the relationship between the time lag and attenuation of nitrogen (N) loads generated in agricultural catchments, long-term trends in activities that generate N loads and in environmental N loads were estimated in catchments in Japan and Korea dominated by non-point-source emissions. Our approach used statistical data and geographical information system software to analyze pollutant loads. The method was successful in both countries because of the availability of well-developed statistics, geographical information, and weather and water quality monitoring systems, and the accumulation of research data concerning the generation of N loads and the fate of N in soils. Comparison of environmental loads with the loads observed in river water at the outlet of each catchment revealed that: (1) the effect of changes in the environmental load in a catchment appeared almost immediately in the river water quality in Korea, but did not appear clearly even 10 years later in Japan; and (2) the strength of the attenuation appeared to be much lower in Korea than in Japan. These findings suggest that regional characteristics play important roles in the sensitivity of water quality to load-generating activities. 相似文献
7.
Satoshi Takeuchi Ryo Sugihara 《Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment》1998,410(3):104-508
The longitudinal electric field of single and double Gaussian laser beams are used to accelerate electrons. The longitudinal field of the single beam is concentrated on the axis and is favourable for acceleration. A set of two beams is considered. Beams run parallel, collinearly, overlap partially and have a phase difference iπ in between. As a result, the transverse components of fields cancel each other while the longitudinal components are double-fold. In both schemes, the electrons are accelerated in lengths of the Rayleigh range, which is common to the plasma-based accelerators. 相似文献
8.
Y. Nakamura Ichiro Tanaka N. Takeuchi S. Koshiba H. Sakaki 《Journal of Electronic Materials》1998,27(11):1240-1243
We studied morphology of GaAs surfaces and the transport properties of two-dimensional electron gas (2DEG) on vicinal (111)B
planes. Multi-atomic steps (MASs) are found on the vicinal (111)B facet grown by molecular beam epitaxy, which will affect
electron transport on the facet. We also studied how the morphology of GaAs epilayers on vicinal (111)B substrates depends
on growth conditions, especially on the As4 flux. The uniformity of MASs on the substrates have been improved and smooth surfaces were obtained when the GaAs was grown
with high As4 flux, providing step periodicity of 20 nm. The channel resistance of the 2DEG perpendicular to the MASs is reduced drastically
with this smooth morphology. These findings are valuable not only for fabricating quantum devices on the (111)B facets but
also those on the vicinal (111)B substrates. 相似文献
9.
Development of accurate schemes is a technical issue related to calculation of electromagnetic fields. This study uses constrained interpolation profile (CIP) method to analyze electromagnetic fields created by line current. This is a novel method proposed by Yabe. Comparison of results obtained using finite difference time domain (FDTD) analysis and CIP analysis indicates that CIP analysis provides higher accuracy using identical discretization. In addition, given the same level of accuracy, CIP analysis requires less memory and less calculation time 相似文献
10.
Wakabayashi H. Ueki M. Narihiro M. Fukai T. Ikezawa N. Matsuda T. Yoshida K. Takeuchi K. Ochiai Y. Mogami T. Kunio T. 《Electron Devices, IEEE Transactions on》2002,49(1):89-95
Sub-50-nm CMOS devices are investigated using steep halo and shallow source/drain extensions. By using a high-ramp-rate spike annealing (HRR-SA) process and high-dose halo, 45-nm CMOS devices are fabricated with drive currents of 650 and 300 μA/μm for an off current of less than 10 nA/μm at 1.2 V with Toxinv =2.5 nm. For an off current less than 300 nA/μm, 33-nm pMOSFETs have a high drive current of 400 uA/μm. Short-channel effect and reverse short-channel effect are suppressed simultaneously by using the HRR-SA process to activate a source/drain extension (SDE) after forming a deep source/drain (S/D). This process sequence is defined as a reverse-order S/D (R-S/D) formation. By using this formation, 24-nm nMOSFETs are achieved with a high drive current of 800 μA/μm for an off current of less than 300 μA/μm at 1.2 V. This high drive current might be a result of a steep halo structure reducing the spreading resistance of source/drain extensions 相似文献