Surface structural and solar absorptance features of nitrate-based copper-cobalt oxides composite coatings: Experimental studies and molecular dynamic simulation

The copper and cobalt oxides composites coatings on aluminum substrates have been successfully synthesized via sol-gel method using nitrate-based sol precursors. The composites were characterized by X-ray Diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Field Emission Scanning Electron Microscopy (FESEM), Atomic Force Microscopy (AFM), and UV–Vis–NIR spectrophotometry. The sol-gel reactions were discussed and Molecular Dynamics (MD) simulation was integrated into the study to predict molecules assembly properties. The XRD analyses revealed that the CuO and the Co₃O₄ composites were formed after the annealing process with the average difference of the calculated lattice parameters compared to ICDDs was 1.17%. The surface electronic structure was mainly consisted of tetrahedral Cu(I), octahedral Cu(II), tetrahedral Co(II), octahedral Co(III) as well as surface, sub-surface and lattice oxygen O^?. The XRD, XPS and MD simulation results showed that there was minimal (or possibly non-existing) indication of copper-cobalt mixed phase oxides formations. FESEM and AFM surveys revealed that the coating had a porous surface composed of interlinked nanoparticles in the range of ~?10 to ~?40?nm. UV–Vis–NIR reflectance spectra showed that the sol precursors concentration and the dip-drying cycle significantly influenced the absorptance value with optimum absorptance (α) of 88.7% exhibited by coating synthesized using sol concentration of 0.1?M and 10 dip-drying cycles. High absorptance value and simplicity in the synthesis process render the coatings to be very promising candidates for solar selective absorber (SSA) applications.     

IR与RS-232的匹配技术

现代电子设备通常包含最新的数据通信接口，以实现更高的数据率或增进用户的便利性。红外技术(IR)是数据通信接口的一个很好例子，但有时单独使用这种最新接口还是不够的，设备还需要与采用传统接口如RS-232的老设备兼容才会被用户所接受。因此，常见的红外技术和RS-232共存于同一设备中。     

用于便携无线设备的Wireless TrenchTM技术

射频电路设计人员常用的一条经验法则是:有源器件的fT至少应为工作频率的十倍时,现代无线设备中的射频电路才会具有良好的性能.     

新一代NV SRAM技术

第一代NV SRAM模块问世近20年来，NVSRAM技术不断更新，以保持与各种应用同步发展，同时满足新的封装技术不断增长的需求。     

Curvilinear fatigue crack reliability analysis by stochastic boundary element method

In this paper, the stochastic boundary element method, which combines the mixed boundary integral equations method explored in Reference 1 with the first-order reliability method, is developed to study probabilistic fatigue crack growth. Due to the high degree of complexity and non-linearity of the response, direct differentiation coupied with the response-surface method is employed to determine the response gradient. Three random processes, the mode I and mode II. stress intensity factors and the crack direction angle, are included in the expression of the response gradient. The sensitivity of these random processes is determined using a first-order response model. An iteration scheme based on the HL-RF method² is applied to locate the most probable failure point on the limit-state surface. The accuracy and efficiency of the stochastic boundary element method are evaluated by comparing the cumulative distribution function of the fatigue life obtained with Monte Carlo simulation. The reliability index and the corresponding probability of failure are calculated for a fatigue crack growth problem with randomness in the crack geometry, defect geometry, fatigue parameters and external loads. The response sensitivity of each primary random variable at the design point is determined to show its role in the fatigue failure. The variation of each primary random variable at the design point with the change of probability of failure is also presented in numerical examples.     

Brain lateralization and severity of stuttering in children

Cerebral lateralization in visual perception was investigated in 9 severe stuttering, 11 mild stuttering and 48 fluent speakers. The subjects were asked to identify words presented in the left or right visual field for 20 ms. Children responded by pointing to the exposed test word on a response card which contained four different words. Errors committed in the left and right visual fields were analyzed. The data showed a left hemisphere superiority in the processing of words in both the mild stutterers and the fluent speakers, but a right hemisphere advantage in the severe stutterers. The results suggest a close relationship between the severity of stuttering and functional brain organization.