Effect of trace rare earth element Er on high pure Al

1　INTRODUCTIONAsit swellknown ,Chinaisrichinrareearths ,whoseprovedreservesare 80 %ofthetotalreservesoftheworld ,rankingfirstintheworld .Atpresent,theresearchandapplicationofREinsteel&ironareratherprofoundinChina .ThoughtheapplicationandstudiesaboutREinaluminumanditsalloysbeganearly ,it snotuntillateinthe 1970 sthattheinvesti gationandexploitationbeganonalargescaleandgraduallycametoaclimax[13] .Inthepast ,there searchofREaluminummainlyfocusedontheapplica tionofsomeelementssuchasLa ,…     

Valved sampling cell for membrane introduction mass spectrometry

Membrane extractors comprising a membrane house inside of a valve have been developed to separate compounds of interest from a sample matrix and introduce these compounds into a mass spectrometer. Experimental control over parameters that affect permeability or that may damage the membrane, such as the membrane temperature, is provided with the valve. The valve was tested for response and response times with the valve separated from the mass spectrometer by various interface tube lengths. Data for steady state response measurements showed no significant change with the valve at different distances from the ion source. Polar compounds show a strong response time dependency on the interface tube length. This adsorption phenomenon is minimized by simply heating the interface tube. Other factors affecting the performance of the device are discussed.     

4GX-90型席草收割机的设计

为了满足席草种植业快速发展的需求,以及实现席草收割机械化,研制开发了4GX - 90型席草收割机.介绍了席草收割机的基本结构、工作原理和设计计算.针对席草细长茎杆及茎杆表皮硬滑等生长种植特性,对席草收割机的拨扶、切割、夹持输送等工作环节进行了试验分析,采取了有效的技术措施.研究结果表明,4GX - 90型席草收割机结构...     

智能网络视频监控系统

设计一种智能网络视频监控系统,实现实时监控和目标实时跟踪功能。系统前端使用网络摄像机采集实时图像,通过网络服务器将实时图像传输给网络用户终端,在终端实现实时监控操作。以颜色信息作目标特征,采用均值偏移算法实现对目标人物的实时跟踪。实验表明,该系统具有良好的稳定性与实时性。     

Effects of substrate temperature on electrical and structural properties of copper thin films

This paper addresses the effects of substrate temperature on electrical and structural properties of dc magnetron sputter-deposited copper (Cu) thin films on p-type silicon. Copper films of 80 and 500 nm were deposited from Cu target in argon ambient gas pressure of 3.6 mTorr at different substrate temperatures ranging from room temperature to 250 °C. The electrical and structural properties of the Cu films were investigated by four-point probe and atomic force microscopy. Results from our experiment show that the increase in substrate temperature generally promotes the grain growth of the Cu films of both thicknesses. The RMS roughness as well as the lateral feature size increase with the substrate temperature, which is associated with the increase in the grain size. On the other hand, the resistivity for 80 nm Cu film decreases to less than 5 μΩ-cm at the substrate temperature of 100 °C, and further increase in the substrate temperature has not significantly decreased the film resistivity. For the 500 nm Cu films, the increase in the grain size with the substrate temperature does not conform to the film resistivity for these Cu films, which show no significant change over the substrate temperature range. Possible mechanisms of substrate-temperature-dependent microstructure formation of these Cu films are discussed in this paper, which explain the interrelationship of grain growth and film resistivity with elevated substrate temperature.     

Red-green-blue laser emissions from dye-doped poly(vinyl alcohol) films

A microscope slide acting as a passive waveguide was coated by three separate poly(vinyl alcohol) films that were doped with Coumarin 460, Disodium Fluorescein, and Rhodamine 640 perchlorate. On collinear pumping by a nitrogen laser, these dyes furnished primary red-green-blue laser emissions that were collected and waveguided by the microscope slide but exited from both ends. Frosting the waveguide exit introduced light scattering at the glass-air interface and spatially overlaid the red-green-blue laser emissions that emerged as a uniform white-light beam.     

Prototyping synchronous group applications

Cooperative team-based activities are changing the nature of work. Current frameworks provide the necessary base communication and coordination tools but require application designers to handle low-level details such as defining a communication protocol. They also provide limited support for prototyping such applications and experimenting with alternative designs. We introduce a sharing style called strong sharing. Its implementation in Object World insulates application designer from low-level communication details. CoSARA, a system built on Object World, lets application designers prototype synchronous group applications by graphically specifying the multiuser interactions. After we describe strong sharing, we describe Object World and how it facilitates building synchronous group applications. Then we describe the CoSARA design methodology for prototyping synchronous group applications and show how we used it to build a multiuser block diagram editor     

S5钢TTT曲线及软化退火工艺的研究

采用日本Ｆｏｒｍａｓｔｏｒ－Ｄｉｇｉｔａｌ全自动相变分析仪测定了Ｓ５钢的临界点及退火用ＴＴＴ曲线的珠光体转变部分，并进行了软化退火工艺的试验，从而得出了最佳退火工艺。     

The localized corrosion of Cr-Ni stainless steel

The kinetics of localized corrosion of Cr-Ni stainless steel is characterized by the quadratic time dependence of the total current density, by the linear increase in the number of pits and by the decrease of the current density in the pits. The pits have a shape of a rotary ellipsoid. The Tafel slope of the metal dissolution in the pits is 0.50 V. The dissolution rate is the highest on the pit bottom and the lowest at the mouth of the pit. The different rate of metal dissolution is caused by the different concentration of chloride ions over the pit surface.     

A submicrometer CMOS embedded SRAM compiler

A highly flexible memory generation system that produces high-density synchronous single- or dual-port static memories has been developed using a 0.7-μm L_eff CMOS technology. The fully diffused memories are embedded into a gate-array environment. Configurations upwards of 1K words×256 b and 16K words×16 b have been obtained. Single-port address access times are, for example, 6.2 ns for 8K and 6.9 ns for 32K SRAMs. The Memorist SRAM Compiler provides for accurate timing characterization and is tightly integrated into an ASIC design CAD system. A gate-array-based test-chip cluster consisting of four 7.3×7.3 mm dies with 16 embedded diffused memories has also been developed