Measurements of distribution of self-bias potential on an RF-plane electrode in plasma etching devices

The self-bias potential (V_dc) induced on an RF-powdered electrode (153 mm Ø) in a plasma is measured using electrical probes which are buried in, de-insulated from, and RF-connected to the electrode. The configuration of the probes allows to study the distribution of V_dc discretely on the electrode. The potential is homogeneous in the absence of external magnetic field. In the presence of a homogeneous magnetic field parallel to the electrode, it is reduced and a monotonous gradient takes place in its distribution due to the plasma shift induced by E × B drift. When the magnetic field is rotated along the axis of the RF-electrode at a frequency less than 50 Hz, the distribution, which is almost identical to the one in a static field, rotates with the magnetic field. On the coordinate system rotating with the magnetic field, the probes are regarded to be rotating. The potential distribution is obtained as a continuous function of the azimuthal angle. Thus the rotation of the field provides information for the experimental interpolation.     

Morphology of thin anatase coatings prepared from alkoxide solutions containing organic polymer,affecting the photocatalytic decomposition of aqueous acetic acid

Porous anatase coatings were prepared from alkoxide solutions containing organic polymer by a dip-coating technique. The morphology of the coatings, such as pore size, pore distribution and thickness, was controlled. The effects of the morphology of the porous anatase coatings on the photocatalytic activity for the photocatalytic decomposition of aqueous acetic acid were examined.     

Preparation and photoconduction of rapidly quenched films in the Bi2O31bM2O5 system (M=V,Nb and Ta)

The Bi₂O₃1bM₂O₅ films (M=V, Nb and Ta) were prepared by a rapid quenching technique using a twin-roller type equipment. Quenched film of pure Bi₂O₃ partially precipitated a tetragonal phase which differs from well-known β-Bi₂O₃ in structure. In every (Bi₂O₃)_0.975 (M₂O₅)_0.025 composition (2.5% M₂O₅), the tetragonal phase was obtained as single phase, and the tetragonality became greater than that of the pure Bi₂O₃. Beyond this composition, the tetragonality decreased to form δ-phase with a fcc structure with increasing the M₂O₅ content. The lowest V₂O₅ content forming a δ-phase was 5%, while a slight tetragonality still remained in the samples containing 10% Nb₂O₅ and 10% Ta₂O₅, respectively. From the measurement of the photoconductivities of the quenched films, it was proved that a photoconduction appeared in the tetragonal phase while no photoconductivity was observed in the cubic phase. The characteristic of the photoconduction was that a remarkable decrease in the resistivity was observed when a light of ca. 500 nm in wave length was irradiated on the films.     

Chemical processing and characterization of spinel-type thermistor powder in the Mn-Ni-Fe oxide system

The coprecipitated Mn-Ni-Fe oxalate was prepared from the mixed sulfate solution by optimum pH control. The chemical composition agreed well with that of the starting solution, and the thermal decomposition of the Mn-Ni-Fe oxalate in air below 600 °C led to the direct formation of cubic spinel phase with fine particle size. The sinterability of the calcined powder, the stability of cubic spinel phase and the influence of annealing temperature on electrical properties of the sintered bodies, were investigated.     

A dynamic Houjin (square) and a symmetric Houjin

A Houjin is an n by n square lattice with each cell containing a symbol (such as a number or a letter). Further, these numbers or letters are designed to exhibit symmetry. For example, a magic square is a Houjin where the embedded symmetry is that the numbers in each row, column, and a center diagonal have an equal sum. This article reports a new Houjin: a dynamic Houjin. A dynamic Houjin changes its numbers at each time step while satisfying the symmetry as a Houjin (a magic square). The dynamic Houjin has a further symmetry in a time dimension, i.e., the sums of the numbers in each cell are identical.     

Interactions oftrans-cinnamic acid,its related phenolic allelochemicals,and abscisic acid in seedling growth and seed germination of lettuce

Phenolic compounds have been identified as the most common allelochemicals produced by higher plants. Inhibitions of cinnamic acid, its related phenolic derivatives, and abscisic acid (ABA) on seedling growth and seed germination of lettuce were studied.trans-Cinnamic acid, ando-,m-, andp-coumaric acids inhibited the growth of etiolated seedlings of lettuce at concentrations higher than 10^–4 M and seed germination above 10^–3 M. Coumarin inhibited seedling growth and seed germination at 10^–5 M or above. Chlorogenic acid inhibited seedling growth above 10^–4 M, but did not inhibit seed germination at 10^–5–5×10^–3 M. Low concentrations (below 10^–3 M) of caffeic and ferulic acids promoted the elongation of hypocotyls, but higher concentrations (over 10^–3 M) inhibited seedling growth and seed germination. These phenolic compounds and abscisic acid had additive inhibitory effects both on seedling growth and seed germination. The inhibition on lettuce was reversed by caffeic and ferulic acids at concentrations lower than 10^–3 M except for the inhibition of germination by coumarin. These results suggest that in naturetrans-cinnamic acid,o-, m-, p-coumaric acids, coumarin, and chlorogenic acid inhibit plant growth regardless of their concentration. However, caffeic and ferulic acids can either promote or inhibit plant growth according to their concentration.     

Development of flexible displays using back‐channel‐etched In–Sn–Zn–O thin‐film transistors and air‐stable inverted organic light‐emitting diodes

We developed flexible displays using back‐channel‐etched In–Sn–Zn–O (ITZO) thin‐film transistors (TFTs) and air‐stable inverted organic light‐emitting diodes (iOLEDs). The TFTs fabricated on a polyimide film exhibited high mobility (32.9 cm²/Vs) and stability by utilization of a solution‐processed organic passivation layer. ITZO was also used as an electron injection layer (EIL) in the iOLEDs instead of conventional air‐sensitive materials. The iOLED with ITZO as an EIL exhibited higher efficiency and a lower driving voltage than that of conventional iOLEDs. Our approach of the simultaneous formation of ITZO film as both of a channel layer in TFTs and of an EIL in iOLEDs offers simple fabrication process.